Abstract: A bar-shaped semiconductor laser chip that can hold down a variation in oscillation wavelength is provided. The bar-shaped semiconductor laser chip has a nitride semiconductor substrate and a semiconductor layer formed on the main surface of the nitride semiconductor substrate and including a plurality of laser chip portions. The plurality of laser chip portions are arrayed in the [11-20] direction. The main surface of the nitride semiconductor substrate is a (0001) plane having an off-angle in the direction along the [11-20] direction. The central part of the main surface of the nitride semiconductor substrate has an off-angle of 0.05±0.1 degrees from the (0001) plane in the direction along the [11-20] direction.

Abstract: Provided are a nitride semiconductor laser chip with a reliability improved by relieving stress due to strain within the nitride semiconductor laser chip, a manufacturing method thereof, and a nitride semiconductor laser device. The nitride semiconductor laser chip comprises: a substrate; and a laminated structure provided on a main surface of the substrate and including a nitride semiconductor layer. In the laminated structure, at least one crack parallel to a resonator end face is formed. By forming a crack within a laser chip, stress due to strain is relieved; therefore, it is possible to obtain a laser chip having a high reliability.

Abstract: A bar-shaped semiconductor laser chip that can hold down a variation in oscillation wavelength is provided. The bar-shaped semiconductor laser chip has a nitride semiconductor substrate and a semiconductor layer formed on the main surface of the nitride semiconductor substrate and including a plurality of laser chip portions. The plurality of laser chip portions are arrayed in the [11-20] direction. The main surface of the nitride semiconductor substrate is a (0001) plane having an off-angle in the direction along the [11-20] direction. The central part of the main surface of the nitride semiconductor substrate has an off-angle of 0.05±0.1 degrees from the (0001) plane in the direction along the [11-20] direction.

Abstract: Provided are a nitride semiconductor laser chip with a reliability improved by relieving stress due to strain within the nitride semiconductor laser chip, a manufacturing method thereof, and a nitride semiconductor laser device. The nitride semiconductor laser chip comprises: a substrate; and a laminated structure provided on a main surface of the substrate and including a nitride semiconductor layer. In the laminated structure, at least one crack parallel to a resonator end face is formed. By forming a crack within a laser chip, stress due to strain is relieved; therefore, it is possible to obtain a laser chip having a high reliability.

Abstract: This invention provides a process for producing a gallium nitride-based compound semiconductor laser element, characterized in that a plane inclined at not less than 0.16 degree and not more than 5.0 degrees in terms of absolute value in the direction of <1-100> in (0001) Ga plane, or a plane in which the root mean square of (A2+B2) is not less than 0.17 and not more than 7.0 wherein A represents the off angle of (0001) Ga plane to <1-100> direction and B represents the off angle of (0001) Ga plane to <11-20> direction, is used as a crystal growth plane of a gallium nitride substrate, and an active layer is grown at a growth rate of not less than 0.5 ú/sec and not more than 5.0 ú/sec.

Abstract: A first buffer layer is formed on a substrate at a lower temperature than a single-crystal-growth-temperature, one or more of a layer composed of a nitride containing neither Ga nor In, a layer which has two or more thin films having different moduli of elasticity cyclically laminated therein, and a layer having an Al composition ratio which decreases and a Ga composition ratio which increases in a direction from the first buffer layer to a device-constituting layer are formed as a second buffer layer on the first buffer layer at the single-crystal-growth-temperature, and a device-constituting layer composed of a nitride semiconductor is formed on the second buffer layer.

Abstract: A method for conferring resistance to a plant virus to plants by introducing into the plant a polynucleotide encoding a protein capable of binding to a movement protein of the plant virus is provided. Also provided are transgenic plants having resistance to a plant virus.

Abstract: A light-emitting diode 10A has a light-emitting element 11a fixed to a leadframe 30 with a conductive adhesive material 20, the light-emitting element 11a having a semiconductor layer 9 including a light-emitting layer 16 laid on a first surface 12a of a translucent substrate 12, a second surface 12b thereof facing away from the first surface 12a being used as a light emission observation surface. A side surface of the semiconductor layer 9 is an inclined surface inclined relative to the first surface 12a, and an angle ? between a normal “a” to the inclined surface and a crystal surface on which the light-emitting layer 16 grows is equal to an angle at which light emitted by the light-emitting layer 16 is totally reflected toward the translucent substrate 12.

Abstract: A first buffer layer is formed on a substrate at a lower temperature than a single-crystal-growth-temperature, one or more of a layer composed of a nitride containing neither Ga nor In, a layer which has two or more thin films having different moduli of elasticity cyclically laminated therein, and a layer having an Al composition ratio which decreases and a Ga composition ratio which increases in a direction from the first buffer layer to a device-constituting layer are formed as a second buffer layer on the first buffer layer at the single-crystal-growth-temperature, and a device-constituting layer composed of a nitride semiconductor is formed on the second buffer layer.

Abstract: A method for conferring resistance to a plant virus to plants is provided. The method comprises the step of introducing into cells of the plant a polynucleotide encoding a protein capable of binding to a movement protein of the plant virus. In one embodiment, the protein encoded by the polynucleotide contains a sequence indicated by position 1 to 86 of SEQ ID NO. 2, or contains the sequence having one or several amino acid substitutions, deletions, and/or additions, and binds to the movement protein of the plant virus. In one embodiment, the polynucleotide contains a nucleotide sequence indicated by position 14 to 271 of SEQ ID NO. 1 or a nucleotide sequence hybridizable to that nucleotide sequence under stringent conditions.

Abstract: In an organic electroluminescent device constructed by providing at least an emitting layer and a carrier transport layer using an organic material between a hole injection electrode and an electron injection electrode, at least one of the emitting layer and the carrier transport layer contains a chelate compound of a chromone derivative with zinc or aluminum, a chelate compound of a 3-hydroxyflavone derivative with a metal, a chelate compound composed of an 8-quinolinol derivative dimer and another ligant which are coordinated to a metal, or a chelate compound composed of two 8-quinolinol derivatives coordinated to a metal and one halogen bonded thereto.

Abstract: In an organic electroluminescent device constructed by providing at least an emitting layer and a carrier transport layer using an organic material between a hole injection electrode and an electron injection electrode, at least one of the emitting layer and the carrier transport layer contains a chelate compound of a chromone derivative with zinc or aluminum, a chelate compound of a 3-hydroxyflavone derivative with a metal, a chelate compound composed of an 8-quinolinol derivative dimer and another ligant which are coordinated to a metal, or a chelate compound composed of two 8-quinolinol derivatives coordinated to a metal and one halogen bonded thereto.

Abstract: In an organic electroluminescent device constructed by providing at least an emitting layer and a carrier transport layer using an organic material between a hole injection electrode and an electron injection electrode, at least one of the emitting layer and the carrier transport layer contains a chelate compound of a chromone derivative with zinc or aluminum, a chelate compound of a 3-hydroxyflavone derivative with a metal, a chelate compound composed of an 8-quinolinol derivative dimer and another ligant which are coordinated to a metal, or a chelate compound composed of two 8-quinolinol derivatives coordinated to a metal and one halogen bonded thereto.

Abstract: A first buffer layer is formed on a substrate at a lower temperature than a single-crystal-growth-temperature, one or more of a layer composed of a nitride containing neither Ga nor In, a layer which has two or more thin films having different moduli of elasticity cyclically laminated therein, and a layer having an Al composition ratio which decreases and a Ga composition ratio which increases in a direction from the first buffer layer to a device-constituting layer are formed as a second buffer layer on the first buffer layer at the single-crystal-growth-temperature, and a device-constituting layer composed of a nitride semiconductor is formed on the second buffer layer.

Abstract: In an organic electroluminescent device constructed by providing at least an emitting layer and a carrier transport layer using an organic material between a hole injection electrode and an electron injection electrode, at least one of the emitting layer and the carrier transport layer contains a chelate compound of a chromone derivative with zinc or aluminum, a chelate compound of a 3-hydroxyflavone derivative with a metal, a chelate compound composed of an 8-quinolinol derivative dimer and another ligant which are coordinated to a metal, or a chelate compound composed of two 8-quinolinol derivatives coordinated to a metal and one halogen bonded thereto.

Abstract: A method of manufacturing a light emitting device, including the steps of: forming an active layer composed of a compound semiconductor containing indium by a vapor phase growth method; and forming a cap layer composed of a compound semiconductor on said active layer by a vapor phase growth method at a growth temperature approximately equal to or lower than a growth temperature for said active layer.

Abstract: A light emitting device includes a cladding layer composed of a III-V group nitride system semiconductor of a first conductivity type, an active layer formed on the cladding layer of the first conductivity type and composed of a III-V group nitride system semiconductor containing In, an undoped cap layer formed on the active layer and composed of a III-V group nitride system semiconductor, and a cladding layer formed on the cap layer and composed of a III-V group nitride system semiconductor of a second conductivity type.

Abstract: A light emitting diode device comprises an n type silicon carbide substrate having first and second major surfaces opposite to each other at least inclined at a predetermined angle not less than 3.degree. from a {0001} plane, an n type silicon carbide layer grown on the first major surface, a p type silicon carbide layer grown on the n type silicon carbide layer, a p type ohmic electrode formed on a partial area of the p type silicon carbide layer, and an n type ohmic electrode formed on a partial area of the second major surface. The diode element has a substantially trapezoidal form in a cross section orthogonal to the first major surface. The diode element has the side of the p type silicon carbide layer broader than the side of the second major surface and is supported at the side of the type silicon carbide layer fixed to a supporting stem.

Abstract: A method of manufacturing a light emitting device, including the steps of: forming an active layer composed of a compound semiconductor containing indium by a vapor phase growth method; and forming a cap layer composed of a compound semiconductor on said active layer by a vapor phase growth method at a growth temperature approximately equal to or lower than a growth temperature for said active layer.