Abstract: To detect deterioration of an SOA and perform feedback control to keep light intensity of output light constant in a configuration in which a DFB laser, an EA modulator, and the SOA are monolithically integrated. A semiconductor optical integrated element includes: a DFB laser that outputs continuous light; an EA modulator that modulates the continuous light; a first multimode interference coupler that inputs the modulated light from a first input port, divides the modulated light, and outputs the divided modulated light from two or more output ports; semiconductor optical amplifiers that are connected to respective output ports of the first multimode interference coupler and amplify each of the divided modulated light; a second multimode interference coupler that has input ports connected to respective outputs of the semiconductor optical amplifiers, multiplexes the amplified modulated light, and outputs the multiplexed modulated light from a first output port; and a monitoring waveguide.

Abstract: An optical transmitter that multiplexes and outputs a plurality of wavelength channels includes: a first light source; at least one second light source having a different wavelength from the first light source, the at least one second light source each having a different wavelength; an optical multiplexer that causes an output light beam from the first light source to be transmitted from a first end surface to a second end surface facing the first end surface, causes the output light beam from the first light source to be reflected by a reflecting mirror formed on the second end surface, causes an output light beam from the second light source to pass through a wavelength filter formed on the first end surface, causes the optical light beam from the second light source to be reflected by the reflecting mirror, and causes output light beams of the respective wavelength channels to reciprocate between the reflecting mirror and the wavelength filter, to sequentially multiplex the output light beams of the respec

Abstract: The present disclosure is to provide a wafer carrier substrate for carrying a wafer on which a plurality of chips is formed, elements to be measured being built in the plurality of chips. The wafer carrier substrate includes: a vacuuming hole for vacuuming of the wafer placed on the wafer carrier substrate; a wafer alignment guide for determining a predetermined position of the wafer placed on the wafer carrier substrate; and a mark for determining a probe contact position. It is possible to recognize a specific shot, without any additional processing of the semiconductor wafer.

Abstract: The optical loss of the output light of the first light source transmitted through the optical multiplexer is suppressed. An optical transmitter includes: a first light source; one or more second light sources having mutually different wavelengths and each having a wavelength different from that of the first light source; an optical multiplexer that transmits output light from the first light source from a first end surface to a second end surface facing the first end surface, causes the output light to reflect on a reflecting mirror formed on the second end surface, transmits output light from the second light source through a wavelength filter formed on the first end surface, causes the output light to reflect on the reflecting mirror, and multiplexes the output light; and a first monitor PD for monitoring optical power with a part of the output light from the first light source.

Abstract: A structure for blocking light incidence to a peripheral part of an element is applied to a rear surface portion, and when optically coupled to a light receiving element, the light is made incident to a center part of the element without fail. An embodiment relates to a semiconductor light receiving element, including a semiconductor light-absorbing layer on a front surface of a semiconductor substrate, for receiving signal light from a rear surface of the semiconductor substrate, and a transmittance of an inner region of a similar shape having a same center as an operating region defined in the semiconductor light-absorbing layer on the rear surface of the semiconductor substrate is higher than that of an outside of the shape.

Abstract: A highly efficient optical burst transmitter is provided. An embodiment is an optical burst transmitter including a control circuit configured to output a data signal and a burst control signal and a semiconductor optical amplifier configured to output an optical data signal modulated using the data signal as an optical burst data signal controlled using the burst control signal, the optical burst transmitter including: an electric line configured to connect the control circuit and the semiconductor optical amplifier and transmit the burst control signal; and an impedance matching circuit configured to impedance-match a characteristic impedance of the electric line and the semiconductor optical amplifier with each other.

Abstract: This semiconductor wafer has formed therein a plurality of chips, each of which has incorporated therein a semiconductor element to be tested. The semiconductor wafer is characterized by comprising: first pads which are formed on the chips, and to which a plurality of probe needles are connected, the probe needles being connected to the semiconductor elements and used for testing the semiconductor elements; and a second pad that is used for performing a contact check on the probe needles, the second pad having a conductive section greater in length than the distance between the centers of the first pads.

Abstract: In an optical receiver circuit which suppresses an unnecessary increase in impedance and occurrences of resonance and radiation noise and which produces preferable high-frequency transmission characteristics, a PD submount mounted with a PD chip and a chip capacitor and a TIA carrier mounted with a TIA chip are electrically connected to each other by a bonding wire. The chip includes an anode electrode pad and a cathode electrode pad, anode electrode-side ground pads are formed at positions that sandwich the pad, and cathode electrode-side ground pads are formed at positions that sandwich the pad. A wire electrically connects the pad and a signal pad for input of the chip to each other, a wire electrically connects the pad and the capacitor to each other, and a wire electrically connects the pads and the pads to each other.

Abstract: A laminated glass has a laminated resin film and two glass plates laminated on both sides of the laminated resin film. The laminated resin film is composed of at least one polyvinyl butyral film and at least one fluorine resin film which are laminated. A laminated glass is composed of at least two non-tempered glass plates and at least one resin interlayer film which are bonded. At least one of the glass plates is a non-tempered borosilicate glass plate.