Abstract: A nitride-based semiconductor laser device capable of preventing deterioration in the vicinity of a facet is obtained. This nitride-based semiconductor laser device comprises a first conductivity type first cladding layer consisting of a nitride-based semiconductor formed on a substrate, an active layer formed on the first cladding layer, a second conductivity type second cladding layer consisting of a nitride-based semiconductor formed on the active layer and a high-resistance region formed at least portions of the active layer and the second cladding layer in the vicinity of the facet. The high-resistance region has higher resistance than the remaining regions, whereby a current hardly flows to the high-resistance region. Thus, temperature increase is suppressed in the vicinity of the facet, whereby deterioration can be prevented in the vicinity of the facet.

Abstract: An n-GaAs current blocking layer is formed on a p-AlGaInP first cladding layer, on sides of a ridge portion and in a region on the upper surface of the ridge portion above a window region. Raised portions are formed in a p-GaAs cap layer in regions in the vicinity of facets, while raised regions are formed in the regions of a first electrode in the vicinity of the facets. A second electrode having a thickness larger than the height of the raised regions is formed on the region between the raised regions of the first electrode.

Abstract: A semiconductor laser device is constructed by stacking a buffer layer, an undoped GaN layer, an n-GaN contact layer, an n-InGaN crack preventing layer, an n-AlGaN cladding layer, a light emitting layer, a p-AlGaN cladding layer, and a p-GaN contact layer in this order. A ridge portion comprising the p-GaN contact layer and the p-AlGaN cladding layer is formed, and the thickness of the p-AlGaN cladding layer in the ridge portion is less than 0.3 &mgr;m.

Abstract: A depletion enhancement layer having a striped opening on the upper surface of a ridge portion, a low carrier concentration layer and an n-type current blocking layer are successively formed on a p-type cladding layer having the ridge portion. The low carrier concentration layer has a lower carrier concentration than the n-type current blocking layer. The band gap of the depletion enhancement layer is set to an intermediate level between the band gaps of the p-type cladding layer and the low carrier concentration layer. Alternatively, a first current blocking layer having a low carrier concentration and a second current blocking layer of the opposite conduction type are formed on an n-type depletion enhancement layer, and a p-type contact layer is formed on the second current blocking layer of the opposite conduction type and another p-type contact layer.

Abstract: The present invention provides an electrode making good ohmic contact with an n-type nitride semiconductor without requiring heat treatment at high temperature, wherein an aluminum layer, a silicon layer, a nickel layer and a gold layer are laminated in this order on an n-type gallium nitride based semiconductor, to form an n-type electrode.

Abstract: In a method of selectively growing a crystal of a compound semiconductor layer which is composed of gallium and arsenic, a selective growth is selectively carried out on a substrate by using a combination of metallic gallium and a reactive gas, such as trisdimethylminoarsine, which includes a metallic compound of arsenic specified by at least one amine. The combination may includes organometallic gallium, such as trimethylgallium, triethylgallium instead of the metallic gallium. Such a combination serves to selectively deposit the compound semiconductor layer only on an exposed portion uncovered with a mask. Any other compound semiconductor layer may be selectively deposited on the exposed portion. The exposed portion may be composed of GaAs, AlGaAs, or InGaAs.

Abstract: On a surface of a p-type GaAs (111)B substrate 11, a mesa groove is formed along a [211]A direction. TDMAAs as a group V material and TMGa as a group III material are supplied at 8.times.10.sup.-3 Pa and 8.times.10.sup.-4 Pa, respectively, to grow n-type GaAs 13 dominantly on a side surface of a mesa 12. Subsequently, the group V material is changed to metal As. As.sub.4 and MAGa are supplied at 5.times.10.sup.-3 Pa and 8.times.10.sup.-4 Pa, respectively, to grow p-type GaAs 14 only on a side surface of the GaAs 13. Then, the group V material is again changed to TDMAAs. TDMAAs and TMGa are supplied both at 8.times.10.sup.-4 Pa to grow p-type GaAs 15.

Abstract: A fabric superior in anti-drape stiffness, stiffness and soft handle, which is formed using a spun yarn comprising regenerated fibers having an average polymerization degree of not less than 400 and a modified cross-section, in a proportion of at least 20% by weight of the yarn, wherein at least one regenerated fiber from among the regenerated fibers of said fabric is split and/or fibrilar. According to the present invention, a fabric having a dry touch, which is superior in anti-drape stiffness, stiffness and soft handle, and a method for manufacture thereof are provided.

Abstract: A fabric superior in anti-drape stiffness, stiffness and soft handle, which is formed using a spun yarn comprising regenerated fibers having an average polymerization degree of not less than 400 and a modified cross-section, in a proportion of at least 20% by weight of the yarn, wherein at least one regenerated fiber from among the regenerated fibers of said fabric is split and/or fibrilar. According to the present invention, a fabric having a dry touch, which is superior in anti-drape stiffness, stiffness and soft handle, and a method for manufacture thereof are provided.