Patents by Inventor Yasuhiko Ohnishi

Yasuhiko Ohnishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with alternating conductivity type layer and method of manufacturing the same
    Patent number: 6787420
    Abstract: This invention clarifies the effects of parameters and enables the mass production of a super-junction semiconductor device, which has a drift layer composed of a parallel pn layer that conducts electricity in the ON state and is depleted in the OFF state. The quantity of impurities in n drift regions is within the range between 100% and 150% or between 110% and 150% of the quantity of impurities in p partition regions. The impurity density of either one of the n drift regions and the p partition regions is within the range between 92% and 108% of the impurity density of the other regions. In addition, the width of either one of the n drift regions and the p partition regions is within the range between 94% and 106% of the width of the other regions.
    Type: Grant
    Filed: July 16, 2001
    Date of Patent: September 7, 2004
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Yasushi Miyasaka, Tatsuhiko Fujihira, Yasuhiko Ohnishi, Katsunori Ueno, Susumu Iwamoto
  • Semiconductor device with alternating conductivity type layer and method of manufacturing the same
    Publication number: 20010046739
    Abstract: This invention clarifies the effects of parameters and enables the mass production of a super-junction semiconductor device, which has a drift layer composed of a parallel pn layer that conducts electricity in the ON state and is depleted in the OFF state. The quantity of impurities in n drift regions is within the range between 100% and 150% or between 110% and 150% of the quantity of impurities in p partition regions. The impurity density of either one of the n drift regions and the p partition regions is within the range between 92% and 108% of the impurity density of the other regions. In addition, the width of either one of the n drift regions and the p partition regions is within the range between 94% and 106% of the width of the other regions.
    Type: Application
    Filed: July 16, 2001
    Publication date: November 29, 2001
    Applicant: Fuji Electric, Co., Ltd.
    Inventors: Yasushi Miyasaka, Tatsuhiko Fujihira, Yasuhiko Ohnishi, Katsunori Ueno, Susumu Iwamoto
  • Semiconductor device with alternating conductivity type layer and method of manufacturing the same
    Patent number: 6291856
    Abstract: This invention clarifies the effects of parameters and enables the mass production of a super-junction semiconductor device, which has a drift layer composed of a parallel pn layer that conducts electricity in the ON state and is depleted in the OFF state. The quantity of impurities in n drift regions is within the range between 100% and 150% or between 110% and 150% of the quantity of impurities in p partition regions. The impurity density of either one of the n drift regions and the p partition regions is within the range between 92% and 108% of the impurity density of the other regions. In addition, the width of either one of the n drift regions and the p partition regions is within the range between 94% and 106% of the width of the other regions.
    Type: Grant
    Filed: November 10, 1999
    Date of Patent: September 18, 2001
    Assignee: Fuji Electric Co., Ltd.
    Inventors: Yasushi Miyasaka, Tatsuhiko Fujihira, Yasuhiko Ohnishi, Katsunori Ueno, Susumu Iwamoto
  • Pullulan copolymer
    Patent number: 4618664
    Abstract: A pullulan copolymer obtained by reacting with a polymerizable olefinic compound a pullulan ester which is produced by reacting pullulan with an unsaturated acid to introduce a double bond of carbon thereinto. It is highly hydrophilic and is a material having a high affinity for a living body and which is, therefore, useful for making contact lenses, intraocular lenses, artificial bones and blood vessels, etc.
    Type: Grant
    Filed: January 9, 1985
    Date of Patent: October 21, 1986
    Assignee: Sadayoshi Kamiya
    Inventor: Yasuhiko Ohnishi
  • Charging connector for electric vehicle
    Patent number: D731433
    Type: Grant
    Filed: May 31, 2013
    Date of Patent: June 9, 2015
    Assignee: FUJIKURA LTD.
    Inventors: Yasunobu Hori, Yasuhiko Ohnishi
  • Charging connector for electric vehicle
    Patent number: D731974
    Type: Grant
    Filed: May 31, 2013
    Date of Patent: June 16, 2015
    Assignee: FUJIKURA LTD.
    Inventors: Yasunobu Hori, Yasuhiko Ohnishi