Abstract: The deposition temperature of the HDP film can be controlled to 365° C. or below, preferably within a temperature range of 335° C. to 365° C., and more preferably 335° C. to 350° C., or at 350° C. Thus, it becomes possible to suppress signal deterioration due to dark current and an increase in fine white defects, and to prevent deterioration of picture quality, even when the HDP film with a favorable embedding capability between fine wiring is used as an interlayer insulation film. An RF power is set to 850 W to 1500 W, so that dark current can be suppressed even more. Further, a plasma silicon nitride film with a refractive index of 1.9 or more and 2.15 or less for a blue wavelength is formed, so that it becomes possible to suppress the lowering of a blue sensitivity in the light receiving elements to further improve picture quality.

Abstract: A method of manufacturing a semiconductor device comprises the steps of: (a) forming a thermal oxide film on a surface of a silicon layer; (b) removing the thermal oxide film; and (c) forming a silicide film on the resulting surface of the silicon layer.

Abstract: A semiconductor device is produced by forming a gate electrode on a semiconductor substrate, and by then forming source/drain regions by an ion implantation using the gate electrode as a mask. A suicide film is formed on at least the surface of the gate electrode. In one aspect of the invention, the ion implantation is performed by controlling a tungsten dose in a range from 0 to 5×109 atom/cm2. In another aspect of the invention, the ion implantation is performed by controlling tungsten concentration in the gate electrode ion to fall in a range from 0 to 3×1014 atom/cm3.

Abstract: A method of manufacturing a semiconductor device comprises the steps of: (a) forming a thermal oxide film on a surface of a silicon layer; (b) removing the thermal oxide film; and (c) forming a silicide film on the resulting surface of the silicon layer.

Abstract: A semiconductor device is produced by forming a gate electrode on a semiconductor substrate, and by then forming source/drain regions by an ion implantation using the gate electrode as a mask. A suicide film is formed on at least the surface of the gate electrode. In one aspect of the invention, the ion implantation is performed by controlling a tungsten dose in a range from 0 to 5×109 atom/cm2. In another aspect of the invention, the ion implantation is performed by controlling tungsten concentration in the gate electrode ion to fall in a range from 0 to 3×1014 atom/cm3.