Patents by Inventor Yasuhiro Asaoka
Yasuhiro Asaoka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7250391Abstract: The cleaning composition for removing resists includes a salt of hydrofluoric acid and a base not containing a metal (A component), a water-soluble organic solvent (B1 component), at least one organic acid or inorganic acid (C component), water (D component), and, optionally, an ammonium salt (E1 component), and having a pH 4-8. Thus, in manufacturing a semiconductor device, such as a copper interconnecting process, efficiency of removing resist residue and other etching residue after etching or ashing is improved, and corrosion resistance of a copper and an insulating film is also improved.Type: GrantFiled: July 11, 2003Date of Patent: July 31, 2007Assignees: Renesas Technology Corp., Matsushita Electric Industrial Co., Ltd., EKC Technology K.K.Inventors: Itaru Kanno, Yasuhiro Asaoka, Masahiko Higashi, Yoshiharu Hidaka, Etsuro Kishio, Tetsuo Aoyama, Tomoko Suzuki, Toshitaka Hiraga, Toshihiko Nagai
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Patent number: 6837963Abstract: A semiconductor device producing method that can clean an edge part of a semiconductor substrate with certainty is provided. The method of producing a semiconductor device includes a step of generating ions and a step of accelerating the ions by means of an electric field and radiating an ion flow onto an edge part of a semiconductor substrate to clean the edge part of the semiconductor substrate. The semiconductor substrate is moved relative to the ion flow while maintaining a state in which the ion flow is being radiated onto the edge part. The step of generating ions includes applying a high-frequency voltage between a pair of electrodes to generate the ions between the electrodes.Type: GrantFiled: October 22, 2001Date of Patent: January 4, 2005Assignees: Renesas Technology Corp., Matsushita Electric Industrial Co., Ltd.Inventors: Hiroshi Tanaka, Naoki Yokoi, Yasuhiro Asaoka, Seiji Muranaka, Toshihiko Nagai
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Publication number: 20040106531Abstract: The cleaning composition for removing resists includes a salt of hydrofluoric acid and a base not containing a metal (A component), a water-soluble organic solvent (B1 component), at least one acid selected from a group consisting of organic acid and inorganic acid (C component), water (D component), and optionally an ammonium salt (E1 component), and its hydrogen ion concentration (pH) is 4-8. Thus, in the manufacturing process of a semiconductor device such as a copper interconnecting process, removing efficiency of resist residue and other etching residue after etching or ashing improves, and corrosion resistance of copper and insulating film also improves.Type: ApplicationFiled: July 11, 2003Publication date: June 3, 2004Applicants: Renesas Technology Corp., Matsushita Electric Industrial Co., Ltd., EKC Technology K.K.Inventors: Itaru Kanno, Yasuhiro Asaoka, Masahiko Higashi, Yoshiharu Hidaka, Etsuro Kishio, Tetsuo Aoyama, Tomoko Suzuki, Toshitaka Hiraga, Toshihiko Nagai
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Publication number: 20040016447Abstract: The present invention provides a cleaning equipment provided with a cleaning solution tank, a cleaning solution supply route for supplying the cleaning solution stored in the cleaning solution tank to a cleaning bath, a cleaning solution return route for returning the cleaning solution that has been supplied to the cleaning bath to the cleaning solution tank, a gas supply route for supplying a purge gas into the cleaning solution tank, and a gas discharge route for discharging the purge gas from the cleaning solution tank. Moreover, a cleaning solution discharge opening of the cleaning solution return route is immersed in the cleaning solution stored in the cleaning solution tank.Type: ApplicationFiled: January 27, 2003Publication date: January 29, 2004Applicants: Matsushita Electrical Industrial Co., Ltd., Mitsubishi Denki Kabushiki KaishaInventors: Toshihiko Nagai, Itaru Kanno, Naoki Yokoi, Yasuhiro Asaoka, Masahiko Higashi
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Publication number: 20030214017Abstract: A gate electrode including a polycrystalline silicon film and a sidewall insulating film are formed on a semiconductor substrate with a gate insulating film therebetween. The semiconductor substrate provided with the gate electrode is brought into contact with a predetermined plating solution to deposit a cobalt film on the semiconductor substrate by electroless plating. Then, a heat treatment is effect to cause a reaction between the silicon in the gate electrode and the cobalt as well as a reaction between the silicon in the semiconductor substrate and the cobalt to form a cobalt silicide film. Thereafter, the unreacted cobalt film is removed. Thereby, damage to the semiconductor substrate can be suppressed, and salicide process can be simplified.Type: ApplicationFiled: October 30, 2002Publication date: November 20, 2003Applicants: Mitsubishi Denki Kabushiki Kaisha, Matsushita Electric Industrial Co., LtdInventors: Naoki Yokoi, Hiroshi Tanaka, Masahiko Higashi, Yasuhiro Asaoka, Toshihiko Nagai
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Patent number: 6642142Abstract: In a water rinsing process performed after the surface of a substrate has been cleaned using a cleaning solution, a first spinning process, in which water is supplied to the surface of the substrate while the substrate is rotated at a first rotation speed, and a second spinning process, in which the substrate is rotated at a second rotation speed that is higher than the first rotation speed, are repeatedly performed alternately.Type: GrantFiled: January 3, 2002Date of Patent: November 4, 2003Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Toshihiko Nagai, Hiroshi Tanaka, Naoki Yokoi, Yasuhiro Asaoka, Seiji Muranaka
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Publication number: 20030159716Abstract: A cleaning solution is introduced at a working temperature higher than room temperature into a cleaning chamber after the temperature of the inside of the cleaning chamber has been raised by introducing a fluid having a higher temperature than room temperature into the cleaning chamber, or after the temperature of the cleaning chamber has been raised using a heat source, thereby cleaning a semiconductor wafer set in the cleaning chamber.Type: ApplicationFiled: August 5, 2002Publication date: August 28, 2003Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Toshihiko Nagai, Hiroshi Tanaka, Naoki Yokoi, Yasuhiro Asaoka, Masahiko Higashi
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Publication number: 20030139046Abstract: Disclosed is a method for removing Pt (or Pt—Ir) and BST contaminants on the surface edge, back, and bevel of a semiconductor wafer. A wafer on which a stacked film selected from the group of a Pt film, a Pt—Ir film, and a Ba—Sr—Ti film is formed is prepared. A chemical containing hydrochloric acid is applied only to the surface edge, back, and bevel of the wafer. The surface edge, back, and bevel of the wafer are rinsed with pure water. Further, a chemical containing hydrogen fluoride is applied. The surface edge, back, and bevel of the wafer are rinsed again with pure water.Type: ApplicationFiled: February 27, 2003Publication date: July 24, 2003Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Yasuhiro Asaoka, Hiroshi Tanaka, Naoki Yokoi, Seiji Muranaka, Toshihiko Nagai
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Patent number: 6586145Abstract: A method of fabricating a semiconductor device causing no pattern shifting of a peripheral oxide film etc. in removal of both of an antireflection film and a mask pattern and having a fine structure not implementable solely by photolithography and the semiconductor device are obtained. The method of fabricating a semiconductor device comprises steps of forming a base film of either a silicon film or a silicon compound film on a semiconductor substrate, forming a hard film of either a metal film or a metal compound film on the base film, forming a resist pattern on the hard film, dryly etching the hard film through the resist pattern serving as a mask for forming a hard pattern, dryly etching the base film through the hard pattern serving as a mask and removing the hard pattern by wet etching with a chemical solution not etching at least the base film.Type: GrantFiled: February 13, 2002Date of Patent: July 1, 2003Assignees: Mitsubishi Denki Kabushiki Kaisha, Matsushita Electric Industrial Co., Ltd.Inventors: Naoki Yokoi, Hiroshi Tanaka, Yasuhiro Asaoka, Seiji Muranaka, Toshihiko Nagai
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Patent number: 6531381Abstract: Disclosed is a method for removing Pt (or Pt—Ir) and BST contaminants on the surface edge, back, and bevel of a semiconductor wafer. A wafer on which a stacked film selected from the group of a Pt film, a Pt—Ir film, and a Ba—Sr—Ti film is formed is prepared. A chemical containing hydrochloric acid is applied only to the surface edge, back, and bevel of the wafer. The surface edge, back, and bevel of the wafer are rinsed with pure water. Further, a chemical containing hydrogen fluoride is applied. The surface edge, back, and bevel of the wafer are rinsed again with pure water.Type: GrantFiled: December 3, 2001Date of Patent: March 11, 2003Assignees: Mitsubishi Denki Kabushiki Kaisha, Matsushita Electric Industrial Co., Ltd.Inventors: Yasuhiro Asaoka, Hiroshi Tanaka, Naoki Yokoi, Seiji Muranaka, Toshihiko Nagai
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Publication number: 20030003754Abstract: A method of fabricating a semiconductor device causing no pattern shifting of a peripheral oxide film etc. in removal of both of an antireflection film and a mask pattern and having a fine structure not implementable solely by photolithography and the semiconductor device are obtained. The method of fabricating a semiconductor device comprises steps of forming a base film of either a silicon film or a silicon compound film on a semiconductor substrate, forming a hard film of either a metal film or a metal compound film on the base film, forming a resist pattern on the hard film, dryly etching the hard film through the resist pattern serving as a mask for forming a hard pattern, dryly etching the base film through the hard pattern serving as a mask and removing the hard pattern by wet etching with a chemical solution not etching at least the base film.Type: ApplicationFiled: February 13, 2002Publication date: January 2, 2003Applicant: Mitsubishi Denki Kabushiki KaishaInventors: Naoki Yokoi, Hiroshi Tanaka, Yasuhiro Asaoka, Seiji Muranaka, Toshihiko Nagai
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Publication number: 20020197853Abstract: In a water rinsing process performed after the surface of a substrate has been cleaned using a cleaning solution, a first spinning process, in which water is supplied to the surface of the substrate while the substrate is rotated at a first rotation speed, and a second spinning process, in which the substrate is rotated at a second rotation speed that is higher than the first rotation speed, are repeatedly performed alternately.Type: ApplicationFiled: January 3, 2002Publication date: December 26, 2002Inventors: Toshihiko Nagai, Hiroshi Tanaka, Naoki Yokoi, Yasuhiro Asaoka, Seiji Muranaka
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Publication number: 20020177310Abstract: Disclosed is a method for removing Pt (or Pt—Ir) and BST contaminants on the surface edge, back, and bevel of a semiconductor wafer. A wafer on which a stacked film selected from the group of a Pt film, a Pt—Ir film, and a Ba—Sr—Ti film is formed is prepared. A chemical containing hydrochloric acid is applied only to the surface edge, back, and bevel of the wafer. The surface edge, back, and bevel of the wafer are rinsed with pure water. Further, a chemical containing hydrogen fluoride is applied. The surface edge, back, and bevel of the wafer are rinsed again with pure water.Type: ApplicationFiled: December 3, 2001Publication date: November 28, 2002Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Yasuhiro Asaoka, Hiroshi Tanaka, Naoki Yokoi, Seiji Muranaka, Toshihiko Nagai
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Publication number: 20020168879Abstract: A semiconductor device producing method that can clean an edge part of a semiconductor substrate with certainty is provided. The method of producing a semiconductor device includes a step of generating ions and a step of accelerating the ions by means of an electric field and radiating an ion flow onto an edge part of a semiconductor substrate to clean the edge part of the semiconductor substrate. The semiconductor substrate is moved relative to the ion flow while maintaining a state in which the ion flow is being radiated onto the edge part. The step of generating ions includes applying a high-frequency voltage between a pair of electrodes to generate the ions between the electrodes.Type: ApplicationFiled: October 22, 2001Publication date: November 14, 2002Applicant: Mitsubishi Denki Kabushiki Kaisha and Matsushita Electric Industrial Co., Ltd.Inventors: Hiroshi Tanaka, Naoki Yokoi, Yasuhiro Asaoka, Seiji Muranaka, Toshihiko Nagai
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Publication number: 20020146911Abstract: A method of manufacturing a semiconductor device, having a resist-removing step which is improved so as not to etch a peripheral material and damage the peripheral material is provided. A resist pattern is formed on a substrate. Using the resist pattern as a mask, the substrate is etched. A surface-deteriorated layer of the resist pattern is removed by a first chemicals treatment. A bulk portion of the resist pattern is removed by a second chemicals treatment.Type: ApplicationFiled: September 26, 2001Publication date: October 10, 2002Applicant: Mitsubishi Denki Kabushiki KaishaInventors: Seiji Muranaka, Hiroshi Tanaka, Naoki Yokoi, Yasuhiro Asaoka, Toshihiko Nagai
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Patent number: 6431183Abstract: A system for treatment of semiconductor substrates is comprised of an ozone generating means (11) , an ejector (10) which dissolves ozone in a chemical solution or pure water to be used for treatment of semiconductor substrates, an ultraviolet light irradiating means (9) which irradiates the ozone-containing chemical solution or pure water with ultraviolet light, thereby controlling the concentration of ozone in the chemical solution or pure water, and a treating vessel (5) in which semiconductor substrates are treated with the chemical solution or pure water containing ozone in controlled concentrations. A system of wet-cleaning and etching of semiconductor substrates is provided having high yields without roughening the surface of the substrates.Type: GrantFiled: April 14, 1998Date of Patent: August 13, 2002Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Toko Konishi, Cozy Ban, Yasuhiro Asaoka
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Patent number: 6368415Abstract: A method for washing a semiconductor substrate having an oxide formed on its surface, which comprises a step for immersing the semiconductor substrate in a first treatment bath to which hydrofluoric acid and pure water are supplied; a step for transporting the semiconductor substrate from the first treatment bath to a second treatment bath to which an inorganic acid and pure water are supplied to adjust the pH value to not more than 7, and immersing the semiconductor substrate in the second treatment bath; and a step for supplying only pure water to the second treatment bath and washing the semiconductor substrate.Type: GrantFiled: July 16, 1998Date of Patent: April 9, 2002Assignee: Mitsubishi Denki Kabushiki KaishaInventor: Yasuhiro Asaoka
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Publication number: 20020026952Abstract: A method of and a device for cleaning a silicon wafer, and a method of and a device for cleaning contamination metals and contamination particles adhered on the wafer surface at the same time.Type: ApplicationFiled: December 7, 1998Publication date: March 7, 2002Inventors: NAOHIKO FUJINO, HIROSHI TANAKA, JUNJI KOBAYASHI, JIRO NAKA, YASUHIRO ASAOKA, TAKUYA NOMOTO