Abstract: A vehicle height control device is adapted to operate even after turning off of the engine ignition switch within a first period only for lowering vehicle height when it exceeds a limit value which is higher than a limit value normally employed for vehicle height lowering control when the ignition switch is turned on, toward a limit value which is higher than the above second-mentioned limit value and further, such a vehicle height lowering control after ignition turn off is carried out, if a door or the trunk of the vehicle is open during the first period, after the door or the trunk has been closed within a second period longer than the first period.

Abstract: The inventive semiconductor integrated circuit device comprises a plurality of regularly disposed elementary units, each including a P channel MOS FET element paired with and an N channel MOS FET element. Desired ones of the elementary units each comprise a MOS field effect transistor having an ordinary form of a source-drain region formed by a diffusion region, while the remaining elementary units each have a diffusion region selectively connected to serve as a resistive element. Consequently, a desired circuit can be implemented without a resistive element being formed on each elementary unit.