Patents by Inventor Yasuhiro Dohi

Yasuhiro Dohi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing semiconductor device without forming selective region by lithography
    Patent number: 6316324
    Abstract: A method of manufacturing a semiconductor device includes the step of doping an N-type impurity via a selective region formed on a semiconductor substrate by lithography, the step of doping a P-type impurity in the semiconductor substrate subsequent to the doping step without forming a selective region by lithography, and the step of self-aligningly forming an N-diffusion layer and a P-diffusion layer by performing wet oxidation with respect to the semiconductor substrate in which the N-type impurity and the P-type impurity are doped.
    Type: Grant
    Filed: November 5, 1996
    Date of Patent: November 13, 2001
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Katsu Honna, Yasuhiro Dohi, Yasuko Anai, Takashi Kyuho, Kazuhiro Sato