Abstract: A method of forming a shallow trench isolation trench in a semiconductor substrate is described. The method includes forming a trench in a region of the substrate, forming a first dielectric material in the trench, forming a second dielectric material above the first dielectric material, forming a first air gap in the first dielectric material in the trench, and forming a second air gap in the second dielectric material above the first air gap.

Abstract: A method of forming a shallow trench isolation trench in a semiconductor substrate is described. The method includes forming a trench in a region of the substrate, forming a first dielectric material in the trench, forming a second dielectric material above the first dielectric material, forming a first air gap in the first dielectric material in the trench, and forming a second air gap in the second dielectric material above the first air gap.

Abstract: Upon manufacture of a semiconductor device provided with a source region and a drain region formed by activating, through anneal, an n-type first dopant ion-implanted in a p-type device forming area provided in a semiconductor layer formed on an insulator, and a body region, (a) ion implantation of Ar in a boundary region between the source and drain regions to be formed, which corresponds to a region lying in a predeterminate area for forming the body region, and (b) high-temperature anneal for partly recovering crystal defects produced by the ion implantation of the Ar at a temperature higher than the anneal for activation of the first dopant are carried out prior to the ion-implantation of the first dopant.

Abstract: Upon manufacture of a semiconductor device provided with a source region and a drain region formed by activating, through anneal, an n-type first dopant ion-implanted in a p-type device forming area provided in a semiconductor layer formed on an insulator, and a body region, (a) ion implantation of Ar in a boundary region between the source and drain regions to be formed, which corresponds to a region lying in a predeterminate area for forming the body region, and (b) high-temperature anneal for partly recovering crystal defects produced by the ion implantation of the Ar at a temperature higher than the anneal for activation of the first dopant are carried out prior to the ion-implantation of the first dopant.