Abstract: A method and apparatus for examining the susceptibility of a semiconductor device to damage by discharge of electrostatic charge on a dielectric package of the device. The package is electrically charged, with an input or output pin of the device disconnected at least from a reference potential of the charging source. The input or output pin is then connected to the reference potential through a load impedance with the charging continued, to effect discharging of the charge on the package. Thus, the electrostatic breakdown voltage of the device can be determined with accuracy by testing of the device after each charging and discharging operation at successively higher charging potentials.