Abstract: According to one embodiment, a memory device includes a substrate; a structure including a plurality of conductive layers stacked on the substrate; and a pillar arranged inside the structure and including a semiconductor layer that extends in a direction perpendicular to a surface of the substrate. The semiconductor layer includes a first portion on a side of an upper portion of the structure, and a second portion between the first portion and the substrate. The first portion has a thickness larger than a thickness of the second portion.

Abstract: A system and method control an automobile by decelerating the automobile at a first deceleration using a braking mechanism in response to detecting that a parking brake switch is turned on, a second deceleration which is smaller than the first deceleration, in response to not detecting that the parking brake switch is turned on and determining that the driver is incapacitated, and a third deceleration which is smaller than the first deceleration, in response to determining that an SOS switch is turned on, detecting that the parking brake switch is changed from on to off, and not determining that the driver is incapacitated.

Abstract: A display device in which a peripheral circuit portion has high operation stability is provided. The display device includes a first substrate and a second substrate. A first insulating layer is provided over a first surface of the first substrate. A second insulating layer is provided over a first surface of the second substrate. The first surface of the first substrate and the first surface of the second substrate face each other. An adhesive layer is provided between the first insulating layer and the second insulating layer. A protective film in contact with the first substrate, the first insulating layer, the adhesive layer, the second insulating layer, and the second substrate is formed in the vicinity of a peripheral portion of the first substrate and the second substrate.

Abstract: A plasma processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) providing a substrate including a silicon-containing film and a mask formed on the film; (b) etching the silicon-containing film through the mask to the first depth, thereby forming a recess in the silicon-containing film; (c) forming a protection film at least on the mask and a side wall of the recess formed on the silicon-containing film after (a); and (d) etching the silicon containing film through the mask to a second depth, the second depth being greater than the first depth.

Abstract: A processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) etching a silicon-containing film to a first depth with a first plasma in the chamber, thereby forming a recess in the silicon-containing film; (b) forming a protection film on a side wall of the recess with a second plasma in the chamber, the protection film having a first thickness at an upper portion of the recess and a second thickness at a lower portion of the recess, the second thickness being smaller than the first thickness; and (c) etching the silicon-containing film to a second depth with the third plasma in the chamber, the second depth being greater than the first depth.

Abstract: A method of processing a wafer includes preparing a wafer having a substrate and a silicon-containing film formed on the substrate; forming a hard mask on the silicon-containing film; forming a pattern on the hard mask by etching the hard mask; and etching the silicon-containing film using the hard mask on which the pattern is formed, wherein the hard mask has a first film formed on the silicon-containing film and containing tungsten, and a second film formed on the first film and containing zirconium or titanium and oxygen.

Abstract: A communication apparatus comprises a memory storing instructions which cause to function as: a first communication unit configured to communicate with an external apparatus using a first communication method in which directionality of radio waves is variable; a second communication unit configured to communicate with the external apparatus using a second communication method in which directionality of radio waves is variable; and a control unit configured to control the first communication unit and the second communication unit so as to, after communication using the first communication method has been established, switch communication with the external apparatus to communication using the second communication method, wherein the control unit controls directionality of second radio waves in the second communication method, using information regarding directionality of first radio waves used in the first communication method.

Abstract: A communication apparatus comprises a memory storing instructions which cause to function as: a first communication unit configured to communicate with an external apparatus using a first communication method in which directionality of radio waves is variable; a second communication unit configured to communicate with the external apparatus using a second communication method in which directionality of radio waves is variable; and a control unit configured to control the first communication unit and the second communication unit so as to, after communication using the first communication method has been established, switch communication with the external apparatus to communication using the second communication method, wherein the control unit controls directionality of second radio waves in the second communication method, using information regarding directionality of first radio waves used in the first communication method.

Abstract: A processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) etching a silicon-containing film to a first depth with a first plasma in the chamber, thereby forming a recess in the silicon-containing film; (b) forming a protection film on a side wall of the recess with a second plasma in the chamber, the protection film having a first thickness at an upper portion of the recess and a second thickness at a lower portion of the recess, the second thickness being smaller than the first thickness; and (c) etching the silicon-containing film to a second depth with the third plasma in the chamber, the second depth being greater than the first depth.

Abstract: A plasma processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) providing a substrate including a silicon-containing film and a mask formed on the film; (b) etching the silicon-containing film through the mask to the first depth, thereby forming a recess in the silicon-containing film; (c) forming a protection film at least on the mask and a side wall of the recess formed on the silicon-containing film after (a); and (d) etching the silicon containing film through the mask to a second depth, the second depth being greater than the first depth.

Abstract: There is provided a substrate processing system including an etching apparatus configured to supply a gas containing fluorocarbon to generate plasma so as to perform an etching process on a film including silicon formed on a substrate, wherein the etching process is performed by using plasma through a mask formed on the film including silicon, a film forming apparatus configured to supply a gas containing carbon so as to form a film including carbon on the etched film including silicon.

Abstract: There is provided a substrate processing system including an etching apparatus configured to supply a gas containing fluorocarbon to generate plasma so as to perform an etching process on a film including silicon formed on a substrate, wherein the etching process is performed by using plasma through a mask formed on the film including silicon, a film forming apparatus configured to supply a gas containing carbon so as to form a film including carbon on the etched film including silicon.

Abstract: A bias circuit according to the present invention includes a resistor layer 2 which is placed above a substrate 1 and connected to a ground potential, and a conductor 4 for forming an inductor 5 placed above the resistor layer 2. Further, a manufacturing method of the bias circuit according to the present invention generates the resistor layer 2 above the substrate 1 and is connected to the ground potential, and generates the conductor 4 for forming the inductor 5 above the resistor layer 2. The present invention can provide a bias circuit and a manufacturing method of the bias circuit that enables easy integration on a semiconductor substrate and prevents parasitic oscillation.

Abstract: First and second magnets are provided in a movable unit that is coupled with a body, the movable unit being rotatable with respect to the body around a first axis and a second axis that is substantially perpendicular to the first axis. First and second magnetic-field sensors are provided in the body. Based on output signals of the first and second magnetic-field sensors, control is performed in accordance with a state of the movable unit with respect to the body.

Abstract: A wireless communication device according to the present invention includes high-frequency circuits 20 to 22 that convert an input signal into a high-frequency signal; a power detection circuit 40 that detects power of the high-frequency signal output from the high-frequency circuits 20 to 22; a common correction circuit 12 that performs a common correction on the signal output to the high-frequency circuits 20 to 22 to reduce local leaks occurring in the high-frequency circuits 20 to 22, according to the power of at least one high-frequency signal detected by the power detection unit 40; and an individual correction circuit 11 that performs a correction for each signal output to the high-frequency circuits 20 to 22 to reduce local leaks occurring in the high-frequency circuits 20 to 22, according to the power of each high-frequency signal detected by the power detection unit 40.

Abstract: A wireless communication device according to the present invention includes high-frequency circuits 20 to 22 that convert an input signal into a high-frequency signal; a power detection circuit 40 that detects power of the high-frequency signal output from the high-frequency circuits 20 to 22; a common correction circuit 12 that performs a common correction on the signal output to the high-frequency circuits 20 to 22 to reduce local leaks occurring in the high-frequency circuits 20 to 22, according to the power of at least one high-frequency signal detected by the power detection unit 40; and an individual correction circuit 11 that performs a correction for each signal output to the high-frequency circuits 20 to 22 to reduce local leaks occurring in the high-frequency circuits 20 to 22, according to the power of each high-frequency signal detected by the power detection unit 40.

Abstract: An image display apparatus includes an image display device having a drive control unit capable of changing a scanning direction, and an image processing device for performing image processing on an inputted image signal to output the processed image signal to the image display device. In addition, a setting device adjusts an image processing setting of the image processing device correspondingly to the scanning direction of the image display device.

Abstract: An information processing apparatus comprises: a touch panel; a touch detection unit configured to detect a touch input to the touch panel; a vibration detection unit configured to detect vibration of the information processing apparatus; and a control unit configured to execute a first function in a case where, within a predetermined period of time following detection by the touch detection unit of a single-touch operation in which the touch panel is touched and then released, touch is not detected again by the touch detection unit and, vibration that satisfies predetermined conditions is not detected by the vibration detection unit, and execute a second function when vibration that satisfies the predetermined conditions is detected by the vibration detection unit within the predetermined period of time following detection of the single-touch operation by the touch detection unit.

Abstract: First and second magnets are provided in a movable unit that is coupled with a body, the movable unit being rotatable with respect to the body around a first axis and a second axis that is substantially perpendicular to the first axis. First and second magnetic-field sensors are provided in the body. Based on output signals of the first and second magnetic-field sensors, control is performed in accordance with a state of the movable unit with respect to the body.

Abstract: A balun circuit comprising first through third CPW lines becoming signal I/O ports, a first differential transmission line for linking the central conductor of the second CPW line and the ground conductor of the first CPW line and for linking the ground conductor of the second CPW line and the central conductor of the first CPW line, a second differential transmission line for linking the central conductors of the first and third CPW lines and for linking the ground conductors of the first and third CPW lines, and a joint for connecting at least two ground conductors of the first through third CPW lines. The differential transmission line has a first line formed in a dielectric layer on a substrate, a second line arranged in the underlying layer, and an underlying line at a fixed potential arranged between the substrate and the second line.