Abstract: A learning model evaluation assistance device includes a model information displayer, a model selector and an output displayer. The model information displayer displays, on a display device, in a selectable manner, a plurality of learning model being stored in a predetermined storage area and having a same interface. The model selector selects at least one learning model from among the plurality of learning models displayed on the display device. The output displayer displays, on the display device, an output result provided by the at least one learning model.

Abstract: A carbon film formation method includes applying a carbon film raw material onto a substrate using a spin coating method to form a carbon-containing film on the substrate, and heating and firing the carbon-containing film to form a carbon film, and irradiating the carbon film with helium ions.

Abstract: A processing apparatus includes a first chamber having a gas first inlet and a first gas outlet, a plasma generator that generates a plasma in the first chamber, and a second chamber having a second gas inlet and a second gas outlet. A control unit controls the first inlet to provide a carbon containing gas to the first chamber and control the plasma generator to apply a first plasma to a silicon-containing film of a substrate to a first depth. The control unit controls the second gas inlet to apply another gas inside the second chamber and deposit a second part of the protection film over the first part of the protection film. The control unit controls a supply of a fluorocarbon gas through the first gas inlet and control the plasma generator to generate a second plasma to etch the silicon-containing film to a second depth.

Abstract: In this data presentation method, first, feature values of multiple pieces of data 9 are calculated. Subsequently, a distance d between the pieces of data 9 in a feature value space S defined on the basis of the feature values is calculated. Then, the data 9 is selected from a dataset 90 on the basis of the calculated distance d, and is presented to a user. Thus, the data 9 can be presented to the user in the manner corresponding to the distance d between the pieces of data 9 in the feature value space S. Therefore, the user can efficiently perform a process of labelling each of the multiple pieces of data 9.

Abstract: A substrate processing method include (a) providing a substrate including an etching target film and a mask on the etching target film, the mask including sidewalls defining at least one opening, (b) selectively forming an additional mask containing carbon on the mask by using plasma generated from a processing gas containing carbon and hydrogen, and (c) etching the etching target film by using plasma generated from an etching gas.

Abstract: A film forming method includes placing a substrate on a substrate placement stage provided inside a processing container, exhausting and depressurizing an inside of the processing container, forming a carbon film on the substrate by generating plasma through application of radio frequency power for plasma generation to the substrate placement stage while supplying a process gas including a carbon-containing gas into the depressurized processing container, and performing plasma processing by applying a negative direct current voltage to a counter electrode facing the substrate placement stage, along with application of the radio frequency power for plasma generation to the substrate placement stage.

Abstract: A polyester resin contains a polymer of an acid component (A) and an alcohol component (B). The component (A) contains 80 mol % or more of a 2,6-naphthalenedicarboxylic acid component with respect to a total amount of the component (A). The component (B) contains at least two types selected from the group consisting of 1,4-butanediol, 1,4-cyclohexanedimethanol, and ethylene glycol. The content of the at least one type of the component (B) is 80 mol % or more with respect to a total amount of the component (B).

Abstract: A method of processing a wafer includes preparing a wafer having a substrate and a silicon-containing film formed on the substrate; forming a hard mask on the silicon-containing film; forming a pattern on the hard mask by etching the hard mask; and etching the silicon-containing film using the hard mask on which the pattern is formed, wherein the hard mask has a first film formed on the silicon-containing film and containing tungsten, and a second film formed on the first film and containing zirconium or titanium and oxygen.

Abstract: A processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) etching a silicon-containing film to a first depth with a first plasma in the chamber, thereby forming a recess in the silicon-containing film; (b) forming a protection film on a side wall of the recess with a second plasma in the chamber, the protection film having a first thickness at an upper portion of the recess and a second thickness at a lower portion of the recess, the second thickness being smaller than the first thickness; and (c) etching the silicon-containing film to a second depth with the third plasma in the chamber, the second depth being greater than the first depth.

Abstract: A plasma processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) providing a substrate including a silicon-containing film and a mask formed on the film; (b) etching the silicon-containing film through the mask to the first depth, thereby forming a recess in the silicon-containing film; (c) forming a protection film at least on the mask and a side wall of the recess formed on the silicon-containing film after (a); and (d) etching the silicon containing film through the mask to a second depth, the second depth being greater than the first depth.

Abstract: A method of processing a wafer includes preparing a wafer having a substrate and a silicon-containing film formed on the substrate; forming a hard mask on the silicon-containing film; forming a pattern on the hard mask by etching the hard mask; and etching the silicon-containing film using the hard mask on which the pattern is formed, wherein the hard mask has a first film formed on the silicon-containing film and containing tungsten, and a second film formed on the first film and containing zirconium or titanium and oxygen.

Abstract: A communication apparatus comprises a memory storing instructions which cause to function as: a first communication unit configured to communicate with an external apparatus using a first communication method in which directionality of radio waves is variable; a second communication unit configured to communicate with the external apparatus using a second communication method in which directionality of radio waves is variable; and a control unit configured to control the first communication unit and the second communication unit so as to, after communication using the first communication method has been established, switch communication with the external apparatus to communication using the second communication method, wherein the control unit controls directionality of second radio waves in the second communication method, using information regarding directionality of first radio waves used in the first communication method.

Abstract: A communication apparatus comprises a memory storing instructions which cause to function as: a first communication unit configured to communicate with an external apparatus using a first communication method in which directionality of radio waves is variable; a second communication unit configured to communicate with the external apparatus using a second communication method in which directionality of radio waves is variable; and a control unit configured to control the first communication unit and the second communication unit so as to, after communication using the first communication method has been established, switch communication with the external apparatus to communication using the second communication method, wherein the control unit controls directionality of second radio waves in the second communication method, using information regarding directionality of first radio waves used in the first communication method.

Abstract: A plasma processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) providing a substrate including a silicon-containing film and a mask formed on the film; (b) etching the silicon-containing film through the mask to the first depth, thereby forming a recess in the silicon-containing film; (c) forming a protection film at least on the mask and a side wall of the recess formed on the silicon-containing film after (a); and (d) etching the silicon containing film through the mask to a second depth, the second depth being greater than the first depth.

Abstract: A processing apparatus includes a chamber having a gas inlet and a gas outlet; a plasma generator; and a controller configured to cause: (a) etching a silicon-containing film to a first depth with a first plasma in the chamber, thereby forming a recess in the silicon-containing film; (b) forming a protection film on a side wall of the recess with a second plasma in the chamber, the protection film having a first thickness at an upper portion of the recess and a second thickness at a lower portion of the recess, the second thickness being smaller than the first thickness; and (c) etching the silicon-containing film to a second depth with the third plasma in the chamber, the second depth being greater than the first depth.

Abstract: There is provided a substrate processing system including an etching apparatus configured to supply a gas containing fluorocarbon to generate plasma so as to perform an etching process on a film including silicon formed on a substrate, wherein the etching process is performed by using plasma through a mask formed on the film including silicon, a film forming apparatus configured to supply a gas containing carbon so as to form a film including carbon on the etched film including silicon.

Abstract: There is provided a substrate processing system including an etching apparatus configured to supply a gas containing fluorocarbon to generate plasma so as to perform an etching process on a film including silicon formed on a substrate, wherein the etching process is performed by using plasma through a mask formed on the film including silicon, a film forming apparatus configured to supply a gas containing carbon so as to form a film including carbon on the etched film including silicon.

Abstract: A bias circuit according to the present invention includes a resistor layer 2 which is placed above a substrate 1 and connected to a ground potential, and a conductor 4 for forming an inductor 5 placed above the resistor layer 2. Further, a manufacturing method of the bias circuit according to the present invention generates the resistor layer 2 above the substrate 1 and is connected to the ground potential, and generates the conductor 4 for forming the inductor 5 above the resistor layer 2. The present invention can provide a bias circuit and a manufacturing method of the bias circuit that enables easy integration on a semiconductor substrate and prevents parasitic oscillation.

Abstract: First and second magnets are provided in a movable unit that is coupled with a body, the movable unit being rotatable with respect to the body around a first axis and a second axis that is substantially perpendicular to the first axis. First and second magnetic-field sensors are provided in the body. Based on output signals of the first and second magnetic-field sensors, control is performed in accordance with a state of the movable unit with respect to the body.

Abstract: A wireless communication device according to the present invention includes high-frequency circuits 20 to 22 that convert an input signal into a high-frequency signal; a power detection circuit 40 that detects power of the high-frequency signal output from the high-frequency circuits 20 to 22; a common correction circuit 12 that performs a common correction on the signal output to the high-frequency circuits 20 to 22 to reduce local leaks occurring in the high-frequency circuits 20 to 22, according to the power of at least one high-frequency signal detected by the power detection unit 40; and an individual correction circuit 11 that performs a correction for each signal output to the high-frequency circuits 20 to 22 to reduce local leaks occurring in the high-frequency circuits 20 to 22, according to the power of each high-frequency signal detected by the power detection unit 40.