Abstract: In a process cartridge having a latent-image-bearing member and a developing device having a developer-holding part and a developing member, at a vertical section which bisects in the process cartridge the surface of the latent-image-bearing member with which surface the developing member is brought into pressure contact, a developer agitation and transport member has at least two rotary agitation and transport members having rotating shafts falling at right angles with the vertical section. Where, at the vertical section, the area of the developer-holding part is represented by S1 and the area of the part corresponding to the movable region of the rotary agitation and transport member is represented by S2, the ratio of S2 to S1, S2/S1, is from 0.8 to 0.99; and the ratio of a long side Sa to a short side Sb, Sa/Sb, of a circumparallelogram having a minimum area in respect to the area S1 in the vertical section is from 1.5 to 3.0.

Abstract: In a non-magnetic toner having non-magnetic toner particles containing at least a binder resin and a colorant, and an inorganic fine powder, the non-magnetic toner particles contain at least one ether compound having a specific structure, and the ether compound is in a content of from 5 ppm to 1,000 ppm.

Abstract: A CIS-based solar cell with a high conversion efficiency that has been reduced in cost by omitting a window layer is provided. The solar cell includes: a first layer having translucency and conductivity; and a p-type semiconductor layer disposed adjacent to the first layer, with a junction being formed by the first layer and the p-type semiconductor layer, wherein the p-type semiconductor layer includes a semiconductor with a chalcopyrite structure containing a group Ib element, a group IIIb element and a group VIb element, the first layer has a carrier density of 1019/cm3 or more, a band gap Eg1 (eV) of the first layer and a band gap Eg2 (eV) of the p-type semiconductor layer satisfy a relationship represented by the formula: Eg1>Eg2, and an electron affinity &khgr;1 (eV) of the first layer and an electron affinity &khgr;2 (eV) of the p-type semiconductor layer satisfy a relationship represented by the formula: 0≦(&khgr;2−&khgr;1)<0.5.

Abstract: In the image forming apparatus, upon reception of a job containing a file to be printed, it is determined whether or not the job contains a template indicating that a plurality of files are to be merged. If it is determined that the job contains the template, then the job is stored in a storage section. Based on the template, it is analyzed whether or not all jobs containing files to be merged have been stored in the storage section. If it is determined that all the jobs have been stored in the storage section, then control is exerted based on the template so as to merge and print the files contained in all the jobs. Thus, a plurality of files can be automatically merged and printed, and therefore the workload on the user can be reduced.

Abstract: Disclosed is a powder filling method in which powder is filled in a powder box having a discharging port at its bottom segment, the powder box is moved over a cavity to be targeted while being slid on a die plate, thereafter the powder in the powder box is dropped into the cavity by its own gravitational force and filled there, wherein the powder in the powder box is applied with a mechanical agitation when the powder in the powder box is at least dropped into the cavity in the powder filling method for filling the powder in the powder box while being dropped at least into the cavity.

Abstract: It is an object of the present invention to provide a solar cell, and a method for manufacturing the same, that includes a layer having Zn, Mg, and O, and with which an increase in efficiency can be achieved. The solar cell includes a first electrode layer, a second electrode layer, a p-type semiconductor layer disposed between the first electrode layer and the second electrode layer, and a layer A disposed between the second electrode layer and the p-type semiconductor layer, the layer A includes Zn, Mg, O, and at least one element M selected from Ca, Sr, Ba, Al, In, and Ga, and photoelectromotive force is generated due to light that is incident from the second electrode layer side.

Abstract: A method of analyzing vibration in a longitudinal direction of a transmission belt that is trained around at least a drive pulley and a driven pulley in a power transmission system. The method includes the steps of using a vibration analysis model which involves a) generating data relative to the power transmission system; and b) calculating belt tension values, including a selected belt tension value, using the generated data. In the event that the selected belt tension value is calculated to be at or lower than a predetermined belt tension value, a correction is made in the selected belt tension value. The corrected, selected, calculated belt tension value is used to carry out the vibration analysis.

Abstract: An electronic device including a new oxide layer and a method for manufacturing the same are provided. The electronic device of the present invention includes an oxide layer, which is formed of an oxide containing an element from group IIa, an element from group IIb and an element from group IIIb. For example, it can be applied to a solar cell including a back electrode serving as a first electrode layer, a transparent electrically conductive film serving as a second electrode layer having a light-transmitting property, and a semiconductor layer that is provided between the back electrode and the transparent electrically conductive film and functions as a light-absorption layer, and including an oxide layer provided between the semiconductor layer and the transparent electrically conductive film.

Abstract: An offset printing ink composition is provided which has further improved drying characteristics to satisfy performances required for offset printing, such as anti-blocking properties including primary blocking resistance and secondary blocking resistance, while aiming at compatibility with the environment. The ink composition comprises mainly a coloring agent, a binder resin and a solvent containing a vegetable oil component and is characterized by further containing as a drying characteristic improver at least one member selected from the group consisting of (A) a polymer which is obtained by polymerizing at least one of olefin monomers and diene monomers, and has a solubility parameter of less than 19 (MPa)1/2 and is compatible with the solvent; and (B) a liquid paraffin, wherein the total amount of the improver is 0.1 to 10% by weight in the ink composition.

Abstract: This invention relates to an IKK kinase protein, IKK3, nucleotides coding for it, vectors and host cells containing the same and methods for screening for modulators of said IKK3 protein for treatment of conditions involving inflammation.

Abstract: The present invention is aimed at providing a sliding contact material that has an alloy composition containing no harmful substance like Cd, especially excellent contact resistance properties, electrical functions that are good and is not subject to secular change, and abrasion resistance practically bearing comparison with conventional sliding contact materials, and is aimed at lengthening the life of a motor by the use of a sliding contact material having excellent durability as a commutator for a small direct-current motor. The present invention is a sliding contact material of an Ag—Ni-based alloy that is used in sliding part electrically switching on and off by mechanical sliding action, and the material is a sliding contact material of Ni metal particle-dispersed-type Ag—Ni-based alloy that is produced in such a method that 0.7 to 3.0 wt. % Ni powder, an additive of Li2CO3 powder corresponding to 0.01 to 0.50 wt.

Abstract: In a process cartridge having a latent-image-bearing member and a developing means having a developer-holding part and a developing member, at a vertical section which bisects in the process cartridge the surface of the latent-image-bearing member with which surface the developing member is brought into pressure contact, a developer agitation and transport member has at least two rotary agitation and transport means having rotating shafts falling at right angles with the vertical section. Where, at the vertical section, the area of the developer-holding part is represented by S1 and the area of the part corresponding to the movable region of the rotary agitation and transport means is represented by S2, the ratio of S2 to S1, S2/S1, is from 0.8 to 0.99; and the ratio of a long side Sa to a short side Sb, Sa/Sb, of a circumparallelogram having a minimum area in respect to the area S1 in the vertical section is from 1.5 to 3.0.

Abstract: This invention relates to an IKK kinase protein, IKK3, nucleotides coding for it vectors and host cells containing the same and methods for screening for modulators of said IKK3 protein for treatment of conditions involving inflammation.

Abstract: The present invention is aimed at providing a sliding contact material that has an alloy composition containing no harmful substance like Cd, especially excellent contact resistance properties, electrical functions that are good and is not subject to secular change, and abrasion resistance practically bearing comparison with conventional sliding contact materials, and is aimed at lengthening the life of a motor by the use of a sliding contact material having excellent durability as a commutator for a small direct-current motor. The present invention is a sliding contact material of an Ag—Ni-based alloy that is used in sliding part electrically switching on and off by mechanical sliding action, and the material is a sliding contact material of Ni metal particle-dispersed-type Ag—Ni-based alloy that is produced in such a method that 0.7 to 3.0 wt. % Ni powder, an additive of Li2CO3 powder corresponding to 0.01 to 0.50 wt.

Abstract: A solar cell includes a first semiconductor layer that is p-type, and a second semiconductor layer that is n-type formed over the first semiconductor layer. The solar cell includes a layer A made of a semiconductor different from the first semiconductor layer and the second semiconductor layer or an insulator between the first semiconductor layer and the second semiconductor layer. The band gap Eg1 of the first semiconductor layer and the band gap Eg2 of the second semiconductor layer satisfy the relationship Eg1<Eg2. The electron affinity &khgr;1 (eV) of the first semiconductor layer and the electron affinity &khgr;2 (eV) of the second semiconductor layer satisfy the relationship 0≦(&khgr;1−&khgr;2)<0.5, and the average layer thickness of the layer A is 1 nm or more and 20 nm or less.

Abstract: Disclosed is a powder filling method in which powder is filled in a powder box having a discharging port at its bottom segment, the powder box is moved over a cavity to be targeted while being slid on a die plate, thereafter the powder in the powder box is dropped into the cavity by its own gravitational force and filled there, wherein the powder in the powder box is applied with a mechanical agitation when the powder in the powder box is at least dropped into the cavity in the powder filling method for filling the powder in the powder box while being dropped at least into the cavity.

Abstract: A relatively compact trimming circuit for hypothetically breaking a fuse includes a resistance bypass circuit connected to a node between a resistor and a fuse. The bypass circuit selectively performs ordinary breakage and hypothetical breakage of the fuse in accordance with a control signal and a data signal. An output changeover circuit connected to the node generates a first output signal in accordance with a state of the fuse during the ordinary breakage. The output changeover circuit generates a second output signal in accordance with the data signal during the hypothetical breakage.

Abstract: A solar cell with good characteristics and high reliability is provided that includes a semiconductor comprising at least one element from each of groups Ib, IIIb, and VIb. A method of manufacturing the same also is provided. The solar cell includes a conductive base, a first insulating layer formed on one principal plane of the base, a second insulating layer formed on a second principal plane of the base, and a light-absorption layer disposed above the first insulating layer. The light-absorption layer is formed of a semiconductor comprising at least one element from each of groups Ib, IIIb, and VIb.

Abstract: Introduction service is supported, in order to activate and facilitate community activities. A community management center 1 searches for offered-service information that matches at least partly with an application designated by a coordinator terminal 2, and selects participants specified by detected offered-service information, as introduction candidates. Then, an introduction candidate list that describes private information, desired terms, and possessed value of ticket for each of the selected introduction candidates is displayed on a coordinator terminal 2. When the coordinator terminal 2 selects a participant to be introduced to the applicant, out of the introduction candidates described in the introduction candidate list, then, the private information and the desired terms of selected participant is displayed on a participant terminal 3 of the applicant.

Abstract: A solar cell includes a first semiconductor layer that is p-type, and a second semiconductor layer that is n-type formed over the first semiconductor layer. The solar cell includes a layer A made of a semiconductor different from the first semiconductor layer and the second semiconductor layer or an insulator between the first semiconductor layer and the second semiconductor layer. The band gap Eg1 of the first semiconductor layer and the band gap Eg2 of the second semiconductor layer satisfy the relationship Eg1<Eg2. The electron affinity &khgr;1 (eV) of the first semiconductor layer and the electron affinity &khgr;2 (eV) of the second semiconductor layer satisfy the relationship 0≦(&khgr;1−&khgr;2)<0.5, and the average layer thickness of the layer A is 1 nm or more and 20 nm or less.