Abstract: A semiconductor storage device includes a memory cell array and a peripheral circuit disposed at least partially below the memory cell array. The peripheral circuit includes an RC circuit in which a resistive portion and a capacitive portion are electrically connected to each other in series. The resistive portion includes first and second lower conductors at a level that is below the memory cell array, an upper conductor at a level that is above the memory cell array, a first contact that connects the first lower conductor to the upper conductor, and a second contact that connects the upper conductor to the second lower conductor. The first lower conductor, the first contact, the upper conductor, the second contact, and the second lower conductor are electrically connected in series in this order and the first lower conductor is closest to the capacitive portion.

Abstract: A light diffusing resin film is formed by curing a light-curable liquid resin composition whose indispensable components are a photo-polymerizable monomer (A), an organic compound (B) that is incompatible with the photo-polymerizable monomer (A), a cosolvent (C) that is compatible commonly with the photo-polymerizable monomer (A) and the organic compound (B) that is incompatible with the photo-polymerizable monomer (A), and a photo-polymerization initiator (D), a light diffusing film having the resin film on a film substrate, an edge lighting type backlight unit in which the light diffusing film is used, and a liquid crystal display device provided with the edge lighting type backlight unit.

Abstract: One end of a fuse is connected to a ground point via a transistor N1A, and the other end thereof is connected to a node VaA. For example, at a fuse connection case, when INTV=“H” is input to the gate of the transistor N1A, the node VaA becomes “L.” At INTV=“L”, a transistor P1A having a low “on” resistance turns ON, and the node VaA is quickly precharged. At INTV=“H”, the transistor N1A turns ON, and the node VaA is quickly discharged.

Abstract: A porous-material-forming photo-curing resin composition comprising: a photo-polymerizable monomer (A) having a surface tension of not more than 25×10?5 N/cm, an organic compound (B) that is non-compatible with the photo-polymerizable monomer (A), a common solvent (C) that is compatible with the photo-polymerizable monomer (A) and the organic compound (B); and a photo-polymerization initiator (D); and a porous resin cured product which is obtained by photo-curing the above composition and has a very low surface tension.

Abstract: A microlens array comprising a laminate of a resin layer of high refractive index and a resin layer of low refractive index, wherein the resin layer of high refractive index contains as a component di(meth)acrylates of fluorene derivatives represented by the following general formula (1):

Abstract: One end of a fuse is connected to a ground point via a transistor N1A, and the other end thereof is connected to a node VaA. For example, at a fuse connection case, when INTV=“H” is input to the gate of the transistor N1A, the node VaA becomes “L.” At INTV=“L”, a transistor P1A having a low “on” resistance turns ON, and the node VaA is quickly precharged. At INTV=“H”, the transistor N1A turns ON, and the node VaA is quickly discharged.

Abstract: A functional circuit and a filter are disposed between a first power supply wire capable of being set in a first electric potential of a semiconductor device and a second power supply wire capable of being set in a second electric potential, which is different from the first electric potential. The functional circuit is connected to the first power supply wire or the second power supply wire. Then, the filter transmits a signal inputted or outputted between the outside of the semiconductor device and the functional circuit.

Abstract: The present invention discloses a light diffusing resin film that is formed by curing a light-curable liquid resin composition whose indispensable components are a photo-polymerizable monomer (A), an organic compound (B) that is incompatible with the photo-polymerizable monomer (A), a cosolvent (C) that is compatible commonly with the photo-polymerizable monomer (A) and the organic compound (B) that is incompatible with the photo-polymerizable monomer (A), and a photo-polymerization initiator (D), a light diffusing film having the resin film on a film surface, an edge light type backlight unit in which the light diffusing film is used, and a liquid crystal display device provided with the edge light type backlight unit.

Abstract: A photosensitive composition comprising photopolymerizable monomers, materials incompatible with the photopolymerizable monomers, common solvents to both the photopolymerizable monomers and the incompatible materials and photopolymerization initiators. A white coating can be obtained by coating the above photosensitive composition on a substrate and irradiating ultraviolet light.

Abstract: A functional circuit and a filter are disposed between a first power supply wire capable of being set in a first electric potential of a semiconductor device and a second power supply wire capable of being set in a second electric potential, which is different from the first electric potential. The functional circuit is connected to the first power supply wire or the second power supply wire. Then, the filter transmits a signal inputted or outputted between the outside of the semiconductor device and the functional circuit.

Abstract: A SRAM 100, 200 has dedicates address decoders 1 and 2 to select a memory cell 5 in write-in operation, and dedicates address decoders 3 and 4 to select a memory cell 5 during readout operation, and memory cells 5. Only one memory cell 5 is connected to the write-in data line 14 in the write-in operation and to the readout data line 11 in the readout operation, respectively, under the control of the dedicated address decoders.