Abstract: A MEMS microphone includes a diaphragm having conductivity, first and second variable capacitors respectively including first and second fixed electrodes, a first voltage output section that outputs a first voltage changed according to a change in a capacitance of the first variable capacitor, and a second voltage output section that outputs a second voltage changed according to a change in a capacitance of the second variable capacitor. The first and second fixed electrodes face the diaphragm. The capacitances of the first and second variable capacitors are changed in accordance with a vibration of the diaphragm. A first bias voltage is applied to the first fixed electrode. A reference voltage is applied to the second fixed electrode. A second bias voltage is applied to the diaphragm. A difference between the second bias voltage and the reference voltage is half of a difference between the first bias voltage and the reference voltage.

Abstract: A MEMS structure that includes: a substrate having an opening; a diaphragm arranged opposite the opening in the substrate; a plurality of anchors securing the diaphragm to the substrate or to another component; and a fixed membrane surrounding the diaphragm over a slit. The outline of the diaphragm protrudes toward the anchors and includes a predetermined intersecting structure that when viewed from the normal to the diaphragm, the diaphragm protrudes toward the anchors in at least one location on the diaphragm between two intersection points of the outline of the diaphragm and the outline of the opening in the substrate. The intersecting structure is configured such that the distance between the two intersection points is greater than the width of the diaphragm at a location closest to an anchor.

Abstract: A MEMS structure that includes: a substrate having an opening; a diaphragm arranged opposite the opening in the substrate; a plurality of anchors securing the diaphragm to the substrate or to another component; and a fixed membrane surrounding the diaphragm over a slit. The outline of the diaphragm protrudes toward the anchors and includes a predetermined intersecting structure that when viewed from the normal to the diaphragm, the diaphragm protrudes toward the anchors in at least one location on the diaphragm between two intersection points of the outline of the diaphragm and the outline of the opening in the substrate. The intersecting structure is configured such that the distance between the two intersection points is greater than the width of the diaphragm at a location closest to an anchor.

Abstract: A microphone has a MEMS acoustic transducer having a frame-shaped support, and a membrane including a diaphragm as a movable electrode, covering an opening in the support, an integrated circuit that amplifies the output from the MEMS acoustic transducer, and a housing that houses the MEMS acoustic transducer and the integrated circuit. The housing includes a sound port bearing partition with a sound port formed therein. The MEMS acoustic transducer is secured in the housing with the membrane thereof facing the inner surface of the sound port bearing partition to form a closed space inward of the sound port bearing partition of the housing between the membrane and the sound port bearing partition. The closed space communicates with the outside via the sound port.

Abstract: A microphone has a MEMS acoustic transducer having a frame-shaped support, and a membrane including a diaphragm as a movable electrode, covering an opening in the support, an integrated circuit that amplifies the output from the MEMS acoustic transducer, and a housing that houses the MEMS acoustic transducer and the integrated circuit. The housing includes a sound port bearing partition with a sound port formed therein. The MEMS acoustic transducer is secured in the housing with the membrane thereof facing the inner surface of the sound port bearing partition to form a closed space inward of the sound port bearing partition of the housing between the membrane and the sound port bearing partition. The closed space communicates with the outside via the sound port.

Abstract: An electrostatic micro relay has a substrate, a signal line arranged on the substrate and having an input point configured to receive a signal and a plurality of signal channels configured to distribute the signal, the plurality of signal channels being each formed with a fixed contact, a plurality of movable contacts, each provided with respect to each of the fixed contacts and arranged so as to be opposed to a corresponding fixed contact across a space, a plurality of movable electrodes, each connected to each of the plurality of movable contacts and configured to make the connected movable contact brought into contact with and separated from the corresponding fixed contact, a cap, formed with a space configured to house the plurality of movable electrodes, and bonded with the substrate, and a signal input portion.

Abstract: A method for manufacturing a semiconductor device is provided, the method comprising: fabricating a semiconductor element on a semiconductor substrate; joining a surface of the semiconductor substrate to a support member, the surface being on a side where the semiconductor element is fabricated; and polishing a surface on an opposite side of the surface of the semiconductor substrate where the semiconductor element is fabricated and reducing a thickness of the semiconductor substrate, in a state where the semiconductor substrate and the support member are joined.

Abstract: Provided is a microphone capable of reducing a plane area seen from above, and further increasing a capacity of a back chamber of an acoustic sensor. An interposer 52 is mounted on a top surface of a circuit board 43, and an acoustic sensor 51 is mounted on the top surface thereof. A signal processing circuit 53 is accommodated in a space 70 provided in the interposer 52, and mounted on the circuit board 43. The acoustic sensor 51 is connected to the circuit board 43 through a wiring structure provided in the interposer 52. The acoustic sensor 51, the interposer 52 and the like are covered by a cover 42 put on the top surface of the circuit board 43. In the cover 42, a sound introduction hole 48 is opened in a position opposed to the front chamber of the acoustic sensor 51. The interposer 52 is formed with a ventilation notch 71 for acoustically communicating a space below a diaphragm 56 of the acoustic sensor 51 with a space inside the cover 42 and outside the interposer 52.

Abstract: An acoustic sensor includes: a semiconductor substrate; a vibrating membrane, formed above the semiconductor substrate, which includes a vibrating electrode; and a fixed membrane, formed on an upper surface of the semiconductor substrate, which includes a fixed electrode, the acoustic sensor detecting an acoustic wave according to a change in capacitance between the vibrating electrode and the fixed electrode. The fixed membrane has a plurality of sound hole portions formed therein in order to allow the acoustic wave to reach the vibrating membrane from outside, and the fixed electrode is formed so that a boundary of an edge portion of the fixed electrode does not intersect the sound hole portions.

Abstract: A high-frequency switch configured to transmit differential signals including first and second signals, has first and second switches each comprising an input terminal configured to receive a signal and two output terminals configured to output the signal, and a substrate comprising a first surface mounted with the first and second switches. The input terminal is arranged between the two output terminals. The first and second switches are arranged on the substrate along a direction intersecting with a direction in which the input terminal and the two output terminals are placed side by side. One terminal of the first switch and one terminal of the second switch are placed side by side along the direction in which the first and second switches are arranged.

Abstract: An electrostatic micro relay has a substrate, a signal line arranged on the substrate and having an input point configured to receive a signal and a plurality of signal channels configured to distribute the signal, the plurality of signal channels being each formed with a fixed contact, a plurality of movable contacts, each provided with respect to each of the fixed contacts and arranged so as to be opposed to a corresponding fixed contact across a space, a plurality of movable electrodes, each connected to each of the plurality of movable contacts and configured to make the connected movable contact brought into contact with and separated from the corresponding fixed contact, a cap, formed with a space configured to house the plurality of movable electrodes, and bonded with the substrate, and a signal input portion.

Abstract: A method for manufacturing a semiconductor device is provided, the method comprising: fabricating a semiconductor element on a semiconductor substrate; joining a surface of the semiconductor substrate to a support member, the surface being on a side where the semiconductor element is fabricated; and polishing a surface on an opposite side of the surface of the semiconductor substrate where the semiconductor element is fabricated and reducing a thickness of the semiconductor substrate, in a state where the semiconductor substrate and the support member are joined.

Abstract: Provided is a microphone capable of reducing a plane area seen from above, and further increasing a capacity of a back chamber of an acoustic sensor. An interposer 52 is mounted on a top surface of a circuit board 43, and an acoustic sensor 51 is mounted on the top surface thereof. A signal processing circuit 53 is accommodated in a space 70 provided in the interposer 52, and mounted on the circuit board 43. The acoustic sensor 51 is connected to the circuit board 43 through a wiring structure provided in the interposer 52. The acoustic sensor 51, the interposer 52 and the like are covered by a cover 42 put on the top surface of the circuit board 43. In the cover 42, a sound introduction hole 48 is opened in a position opposed to the front chamber of the acoustic sensor 51. The interposer 52 is formed with a ventilation notch 71 for acoustically communicating a space below a diaphragm 56 of the acoustic sensor 51 with a space inside the cover 42 and outside the interposer 52.

Abstract: An acoustic sensor includes: a semiconductor substrate; a vibrating membrane, formed above the semiconductor substrate, which includes a vibrating electrode; and a fixed membrane, formed on an upper surface of the semiconductor substrate, which includes a fixed electrode, the acoustic sensor detecting an acoustic wave according to a change in capacitance between the vibrating electrode and the fixed electrode. The fixed membrane has a plurality of sound hole portions formed therein in order to allow the acoustic wave to reach the vibrating membrane from outside, and the fixed electrode is formed so that a boundary of an edge portion of the fixed electrode does not intersect the sound hole portions.

Abstract: A method for manufacturing a vibration sensor including forming a sacrifice layer at one part of a front surface of a semiconductor substrate of monocrystalline silicon with a material isotropically etched by an etchant for etching the semiconductor substrate, forming a thin film protective film with a material having resistance to the etchant on the sacrifice layer and the front surface of the semiconductor substrate at a periphery of the sacrifice layer, forming a thin film of monocrystalline silicon, polycrystalline silicon, or amorphous silicon on an upper side of the sacrifice layer, opening a backside etching window in a back surface protective film having resistance to the etchant for etching the semiconductor substrate formed on a back surface of the semiconductor substrate, forming a through-hole in the semiconductor substrate by etching the semiconductor substrate anisotropically by using crystal-oriented etching by applying the etchant from the back surface window, then etching the sacrifice layer

Abstract: A microphone manufacturing method that includes forming an etching protective film on a surface of a semiconductor substrate, opening an etching window through the etching protective film, and forming a sacrifice layer in the etching window and also on an upper face of the etching protective film. The method includes forming a vibration film above said sacrifice layer and starting an etching process of said sacrifice layer through a preformed port at a location wherein said sacrifice layer is sandwiched by said vibration film and the etching protective film and located apart from the etching window. The etching process uses an etchant to which the etching protective film is resistant, to open the etching window. The method includes crystal anisotropically etching said semiconductor substrate through the port and the etching window by using an etchant to which the etching protective film is resistant so that a cavity is formed.

Abstract: A method for manufacturing a vibration sensor including forming a sacrifice layer at one part of a front surface of a semiconductor substrate of monocrystalline silicon with a material isotropically etched by an etchant for etching the semiconductor substrate, forming a thin film protective film with a material having resistance to the etchant on the sacrifice layer and the front surface of the semiconductor substrate at a periphery of the sacrifice layer, forming a thin film of monocrystalline silicon, polycrystalline silicon, or amorphous silicon on an upper side of the sacrifice layer, opening a backside etching window in a back surface protective film having resistance to the etchant for etching the semiconductor substrate formed on a back surface of the semiconductor substrate, forming a through-hole in the semiconductor substrate by etching the semiconductor substrate anisotropically by using crystal-oriented etching by applying the etchant from the back surface window, then etching the sacrifice layer

Abstract: A sacrifice layer 36 is exposed through a chemical charging port 31 so that the sacrifice layer 36 and sacrifice layer 35 are etched and removed by an etchant introduced from the chemical charging port 31. Since the surface of an Si substrate 22 is exposed to an etching window 34 corresponding to the removed portion of the sacrifice layer 35, the Si substrate 22 is crystal anisotropically etched below the etching window 34 to form a cavity 23. In contrast, in a space corresponding to the etched and removed portion of the sacrifice layer 36, since the surface of the Si substrate 22 is covered with a protective film 32, the Si substrate 22 is not etched to form a bent hole 26 therein. The cavity can be formed in the semiconductor substrate by an etching process from the surface side. Moreover, a bent hole having a great acoustic resistance can be easily formed.