Patents by Inventor Yasuhiro Ido
Yasuhiro Ido has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7728406Abstract: A semiconductor device of the present invention comprises: a substrate; a plurality of wiring layers formed over the substrate; a fuse formed in an uppermost one of the plurality of wiring layers; a first insulating film made up of a single film and formed on the uppermost wiring layer such that the first insulating film is in contact with a surface of the fuse; and a second insulating film formed on the first insulating film; wherein the second insulating film has an opening therein formed above a fuse region of the uppermost wiring layer such that only the first insulating film exists above the fuse region, the fuse region including the fuse and being irradiated with a laser beam when the fuse is blown.Type: GrantFiled: October 23, 2006Date of Patent: June 1, 2010Assignee: Renesas Technology Corp.Inventors: Yasuhiro Ido, Takeshi Iwamoto
-
Patent number: 7709016Abstract: The object of the present invention is to impart lasting excellent insect proof property to boards. According to the present invention, an insecticidal treatment liquid which contains an insecticide in an aqueous dispersion of colloidal silica is applied to the surface of a coat on a substrate applied with coating. Namely, according to the present invention, since a coating composition is not used to fix the insecticide to the surface of the coat, the insecticide is not diluted with a resin in the coating composition.Type: GrantFiled: August 24, 2006Date of Patent: May 4, 2010Assignee: Nichiha CorporationInventor: Yasuhiro Ido
-
Patent number: 7667290Abstract: The present invention provides a semiconductor device comprising: a substrate; a first insulating film formed on a principal surface of the substrate; a second insulating film formed on the first insulating film; a plurality of fuses formed on the second insulating film; and a blocking layer disposed in the first and second insulating films, the blocking layer being formed of a material capable of reflecting laser light irradiated to blow the plurality of fuses. The blocking layer overlaps a region in which the plurality of fuses are formed when viewed from the principal surface of the substrate. The plurality of fuses may be each formed in two or more insulating film layers laminated to one another on the second insulating film.Type: GrantFiled: September 29, 2005Date of Patent: February 23, 2010Assignee: Renesas Technology Corp.Inventors: Yasuhiro Ido, Takeshi Iwamoto
-
Publication number: 20070164394Abstract: On a semiconductor substrate a silicon oxide film is formed and provided with a recess. In the recess a reflector layer of copper is disposed as a blocking layer with a barrier metal posed therebetween. The reflector layer of copper is covered with a silicon oxide film and thereon a fuse region provided with a plurality of fuses is provided. The reflector layer of copper has a plane of reflection recessed downward to reflect a laser beam. The reflector layer of copper is arranged to overlap substantially the entirety of the fuse region, as seen in a plane. A laser beam radiated to blow the fuse can have a reduced effect on a vicinity of the fuse region. A semiconductor device reduced in size can be obtained.Type: ApplicationFiled: August 29, 2006Publication date: July 19, 2007Applicant: Renesas Technology CorporationInventors: Yasuhiro Ido, Kazushi Kono, Takeshi Iwamoto
-
Publication number: 20070102786Abstract: A semiconductor device of the present invention comprises: a substrate; a plurality of wiring layers formed over the substrate; a fuse formed in an uppermost one of the plurality of wiring layers; a first insulating film made up of a single film and formed on the uppermost wiring layer such that the first insulating film is in contact with a surface of the fuse; and a second insulating film formed on the first insulating film; wherein the second insulating film has an opening therein formed above a fuse region of the uppermost wiring layer such that only the first insulating film exists above the fuse region, the fuse region including the fuse and being irradiated with a laser beam when the fuse is blown.Type: ApplicationFiled: October 23, 2006Publication date: May 10, 2007Applicant: Renesas Technology Corp.Inventors: Yasuhiro Ido, Takeshi Iwamoto
-
Publication number: 20070063225Abstract: A semiconductor device includes a substrate, a fuse that can be blown by the radiation of light formed above the substrate, and insulating films formed on the fuse and on the substrate. One of the insulating films includes a flat portion formed on the substrate and the surface thereof is higher than the surface of the fuse, and a protruded portion formed on the fuse continuously from the flat portion, and protruded from the surface of the flat portion.Type: ApplicationFiled: November 22, 2006Publication date: March 22, 2007Applicant: RENESAS TECHNOLOGY CORP.Inventors: Yasuhiro Ido, Takeshi Iwamoto
-
Publication number: 20070048346Abstract: The object of the present invention is to impart lasting excellent insect proof property to boards. According to the present invention, an insecticidal treatment liquid which contains an insecticide in an aqueous dispersion of colloidal silica is applied to the surface of a coat on a substrate applied with coating. Namely, according to the present invention, since a coating composition is not used to fix the insecticide to the surface of the coat, the insecticide is not diluted with a resin in the coating composition.Type: ApplicationFiled: August 24, 2006Publication date: March 1, 2007Applicant: NICHIHA CO., LTD.Inventor: Yasuhiro Ido
-
Patent number: 7115966Abstract: On a semiconductor substrate a silicon oxide film is formed and provided with a recess. In the recess a reflector layer of copper is disposed as a blocking layer with a barrier metal posed therebetween. The reflector layer of copper is covered with a silicon oxide film and thereon a fuse region provided with a plurality of fuses is provided. The reflector layer of copper has a plane of reflection recessed downward to reflect a laser beam. The reflector layer of copper is arranged to overlap substantially the entirety of the fuse region, as seen in a plane. A laser beam radiated to blow the fuse can have a reduced effect on a vicinity of the fuse region. A semiconductor device reduced in size can be obtained.Type: GrantFiled: February 28, 2003Date of Patent: October 3, 2006Assignee: Renesas Technology Corp.Inventors: Yasuhiro Ido, Kazushi Kono, Takeshi Iwamoto
-
Patent number: 7034406Abstract: A semiconductor device includes an alignment mark arranged on a surface, and including a high reflectance portion and a flat low reflectance portion; and a first silicon oxide film formed internally and provided with a plurality of first embedded portions filled with a material different from a material of portions around the embedded portions. The first embedded portions are formed in at least a portion of a region avoiding a portion shaded by projecting the high reflectance portion onto the silicon oxide film.Type: GrantFiled: June 21, 2004Date of Patent: April 25, 2006Assignee: Renesas Technology Corp.Inventors: Yasuhiro Ido, Takeshi Iwamoto, Kazushi Kono
-
Publication number: 20060076642Abstract: The present invention provides a semiconductor device comprising: a substrate; a first insulating film formed on a principal surface of the substrate; a second insulating film formed on the first insulating film; a plurality of fuses formed on the second insulating film; and a blocking layer disposed in the first and second insulating films, the blocking layer being formed of a material capable of reflecting laser light irradiated to blow the plurality of fuses. The blocking layer overlaps a region in which the plurality of fuses are formed when viewed from the principal surface of the substrate. The plurality of fuses may be each formed in two or more insulating film layers laminated to one another on the second insulating film.Type: ApplicationFiled: September 29, 2005Publication date: April 13, 2006Applicant: Renesas Technology Corp.Inventors: Yasuhiro Ido, Takeshi Iwamoto
-
Publication number: 20040262783Abstract: A semiconductor device includes an alignment mark arranged on a surface, and including a high reflectance portion and a flat low reflectance portion; and a first silicon oxide film formed internally and provided with a plurality of first embedded portions filled with a material different from a material of portions around the embedded portions. The first embedded portions are formed in at least a portion of a region avoiding a portion shaded by projecting the high reflectance portion onto the silicon oxide film.Type: ApplicationFiled: June 21, 2004Publication date: December 30, 2004Applicant: RENESAS TECHNOLOGY CORP.Inventors: Yasuhiro Ido, Takeshi Iwamoto, Kazushi Kono
-
Publication number: 20040080022Abstract: On a semiconductor substrate a silicon oxide film is formed and provided with a recess. In the recess a reflector layer of copper is disposed as a blocking layer with a barrier metal posed therebetween. The reflector layer of copper is covered with a silicon oxide film and thereon a fuse region provided with a plurality of fuses is provided. The reflector layer of copper has a plane of reflection recessed downward to reflect a laser beam. The reflector layer of copper is arranged to overlap substantially the entirety of the fuse region, as seen in a plane. A laser beam radiated to blow the fuse can have a reduced effect on a vicinity of the fuse region. A semiconductor device reduced in size can be obtained.Type: ApplicationFiled: February 28, 2003Publication date: April 29, 2004Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Yasuhiro Ido, Kazushi Kono, Takeshi Iwamoto
-
Publication number: 20040012071Abstract: A semiconductor device includes a substrate, a fuse that can be blown by the radiation of light formed above the substrate, and insulating films formed on the fuse and on the substrate. One of the insulating films includes a flat portion formed on the substrate and the surface thereof is higher than the surface of the fuse, and a protruded portion formed on the fuse continuously from the flat portion, and protruded from the surface of the flat portion.Type: ApplicationFiled: January 24, 2003Publication date: January 22, 2004Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Yasuhiro Ido, Takeshi Iwamoto
-
Patent number: 6362514Abstract: There is described a semiconductor device having a copper fuse which prevents damage to a silicon substrate beneath the copper fuse, which would otherwise be caused by a laser beam radiated to blow the copper fuse. A light absorbing layer is formed on the copper fuse layer from material whose light absorption coefficient is greater than that of a copper wiring layer. Light absorbed by the light absorbing layer is transmitted, through heat conduction, to the copper wiring layer beneath the light absorbing layer and further to a barrier metal layer beneath the copper wiring layer. Even when the widely-used conventional laser beam of infrared wavelength is used, the copper fuse can be blown. Since a guard layer is formed below the fuse layer, there can be prevented damage to the silicon substrate, which would otherwise be caused by exposure to the laser beam of visible wavelength.Type: GrantFiled: July 13, 1999Date of Patent: March 26, 2002Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Yasuhiro Ido, Takeshi Iwamoto, Rui Toyota
-
Patent number: 6339250Abstract: On a silicon substrate, silicon oxide film is formed. On the silicon oxide film, a BPSG film is formed. On the BPSG film, a silicon oxide film which does not include at least phosphorus and has a thickness equal to or more than about 1 &mgr;m is formed as a protective film. On the silicon film, a fuse is formed. Covering the fuse, a silicon oxide film which does not include at least phosphorus is formed on the silicon oxide film. Thus, the corrosion of the fuse is prevented, whereby a semiconductor device with highly reliable metal interconnection can be obtained.Type: GrantFiled: December 17, 1998Date of Patent: January 15, 2002Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Yasuhiro Ido, Takeshi Iwamoto, Rui Toyota
-
Patent number: 6259147Abstract: A semiconductor device includes: an insulation layer; a fuse layer extending on the insulation layer in one direction and disconnected through light radiation to control a redundant circuit; a pseudo fuse layer on the insulation layer along at least one side of the fuse layer; another insulation layer covering the fuse layer and the pseudo fuse layer; and a protection film formed on another insulation layer and having an opening in a region opposite to the fuse layer. Fuse layers having a spacing of less than 4 &mgr;m or 4.5 to 5.5 &mgr;m. Such a structure allows a semiconductor device with a fuse layer capable of being disconnected reliably and providing a smaller blow trace.Type: GrantFiled: January 7, 1999Date of Patent: July 10, 2001Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Takeshi Iwamoto, Rui Toyota, Kaoru Motonami, Yasuhiro Ido, Masatoshi Kimura, Kakutaro Suda, Kazuhide Kawabe, Hideki Doi, Hiroaki Sekikawa
-
Patent number: 6163062Abstract: A semiconductor device has a plurality of fuse members (1a, 1b) composed of a metal that can be cut by laser light (4), disposed over a semiconductor substrate (5). The length L of the fuse members (1a, 1b) is smaller than a value obtained by subtracting an alignment error .alpha. of the laser light (4) from a spot diameter D of the laser light (4), i.e., the value (D-.alpha.). The fuse members (1a, 1b) are spaced a distance l larger than a value obtained by adding the alignment error .alpha. to the half of the spot diameter D, i.e., the value (D/2+.alpha.).Type: GrantFiled: May 4, 1998Date of Patent: December 19, 2000Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Shigeru Shiratake, Hideki Genjo, Yasuhiro Ido, Atsushi Hachisuka, Koji Taniguchi
-
Patent number: 5998986Abstract: A method for cleaning probes of a probe card used for testing semiconductor wafers and an apparatus for carrying out the cleaning method. Microwave energy is supplied to and a magnetic field is impressed on a reaction gas to generate a plasma; a magnetic field source generates a magnetic field, funneling and directing the plasma toward a zone opposite a probe card; a baffle funnels the plasma toward a zone where probes of the probe card are present; and a voltage source impresses controlled DC voltages onto the probes so that the energy of ions incident on the probes exceeds a threshold energy for sputtering aluminum but not a threshold energy for sputtering tungsten.Type: GrantFiled: June 6, 1997Date of Patent: December 7, 1999Assignee: Mitsubishi Denki Kabushiki KaishaInventor: Yasuhiro Ido