Abstract: A solid image pick-up element comprises a semiconductor substrate, a photoelectric transfer region formed on the substrate, and an optical black region formed on the substrate. Each of the photoelectric transfer region and the optical black region includes a plurality of regularly arrayed light receiving units. A shielding film is formed on the light receiving units of the optical black region and is covered with a shielding layer. Preferably, the shielding film comprises three color filters in red, green and blue. Even if the shielding film causes light leakage, the shielding layer makes light damp, thereby reducing the occurrence of light leakage.

Abstract: A solid image pick-up element has a pixel region, an output region located near the pixel region, and a field portion located remote from the pixel region, all of which are formed at un upper layer of a semiconductor substrate. The pixel region is provided with plural rows of light receiving portions for performing photoelectric conversion with respect to light received thereby. Between the plural rows of the light receiving portions are interposed transfer portions for transferring signals obtained through the photoelectric conversion. The output region is provided with an output portion for outputting the signals transferred from the transfer portions. The semiconductor substrate is covered with three dielectric films, and an opening is formed through two dielectric films at a location above the output portion.