Patents by Inventor Yasuhiro Imanishi

Yasuhiro Imanishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120016117
    Abstract: Disclosed is a compound which is useful in preventing and treating cardiac arrhythmia such as atrial fibrillation. A compound represented by formula (1) or a pharmaceutically acceptable salt of the same. In formula (1), ring X represents benzene or pyridine; R1 represents an optionally substituted alkyl group; R2 represents an optionally substituted aryl group, an optionally substituted heterocyclic group, an optionally substituted arylalkyl group or an optionally substituted heterocyclic group-substituted alkyl group; R3, R4, R5, R6, R7, R8 and R9 represent each hydrogen or an alkyl group, provided that R3 and R5 may be bonded to each other to form, together with the carbon atom adjacent thereto, a cycloalkyl group; and m represents 0 or 1.
    Type: Application
    Filed: March 26, 2010
    Publication date: January 19, 2012
    Inventors: Tetsuo Yamaguchi, Hideki Ushirogochi, Miki Hirai, Yasuhiro Imanishi
  • Publication number: 20070060629
    Abstract: The present invention provides a large conductance calcium-activated K channel opener comprising a compound of the formula (I): wherein R1 and R3 are each sulfonamide, carbamoyl, acyl, amino, and the like, m and n are each 0 to 2, R2 and R4 are each cyano, nitro, hydroxyl, an alkoxy, a halogen, or an alkyl, Ring A is benzene or a heterocyclic ring, Ring B is benzene, a heterocyclic ring, a cycloalkane etc, and Ring Q is pyrazole or isoxazole, or a pharmaceutically acceptable salt thereof as an active ingredient.
    Type: Application
    Filed: October 15, 2004
    Publication date: March 15, 2007
    Inventors: Yasuhiro Imanishi, Nobumasa Awai, Miki Hirai, Toshihiro Hosaka, Rikako Kono
  • Patent number: 4515755
    Abstract: An apparatus for producing silicon single crystal from melted silicon by the pull-up process using a seed crystal, wherein at least a portion of a device in contact with the melted silicon includes a layer of silicon nitride precipitated from gaseous phase and comprising 20% or above of .beta. phase, or comprising 80% or above of .alpha. phase whose crystal grains have grain diameters of 5 .mu.m or above at a ratio of 10% or more.
    Type: Grant
    Filed: April 14, 1982
    Date of Patent: May 7, 1985
    Assignees: Toshiba Ceramics Co., Ltd., Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Shuitsu Matsuo, Yasuhiro Imanishi, Hideo Nagashima, Masaharu Watanabe, Toshiro Usami, Hisashi Muraoka