Patents by Inventor Yasuhiro Kanamaru
Yasuhiro Kanamaru has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240134175Abstract: Provided is a highly reliable optical filtering device used as a spatial filter for an optical inspection apparatus and configured to prevent a shutter from sticking to a wall surface of a shutter opening. The optical filtering device includes the shutter openable and closeable by voltage control and a substrate having the shutter opening serving as a movable range of the shutter, in which the substrate includes a sticking prevention part configured to prevent the shutter from sticking to the wall surface of the shutter opening when the shutter is opened.Type: ApplicationFiled: March 24, 2021Publication date: April 25, 2024Inventors: Yasuhiro YOSHIMURA, Masatoshi KANAMARU, Takanori AONO, Hitoyuki TOMOTSUNE, Yuko OTANI, Nobuhiko KANZAKI
-
Patent number: 8576634Abstract: The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.Type: GrantFiled: April 20, 2010Date of Patent: November 5, 2013Assignee: Renesas Electronics CorporationInventors: Fumitoshi Ito, Yoshiyuki Kawashima, Takeshi Sakai, Yasushi Ishii, Yasuhiro Kanamaru, Takashi Hashimoto, Makoto Mizuno, Kousuke Okuyama, Yukiko Manabe
-
Publication number: 20100202205Abstract: The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.Type: ApplicationFiled: April 20, 2010Publication date: August 12, 2010Inventors: Fumitoshi Ito, Yoshiyuki Kawashima, Takeshi Sakai, Yasushi Ishii, Yasuhiro Kanamaru, Takashi Hashimoto, Makoto Mizuno, Kousuke Okuyama, Yukiko Manabe
-
Patent number: 7721599Abstract: Conventional thermal flow measurement devices lack consideration for automobiles in severe environments. A detection element of the thermal flow measurement device according to the present invention is structured by the provision of a planar substrate made of a material having good thermal conductivity, such as silicon or ceramic, with a thin-walled portion (diaphragm). On the surface of the thin-walled portion, the detection element comprises a heat element as a heater heated to a temperature being different to a predetermined extent from the temperature of the air flow to be measured, temperature-detecting resistors as temperature-detecting means on both sides of the heat element, wiring portions formed of electrical conductors that draw signal lines from the heat element and the temperature-detecting resistors and that have a melting point of 2000° C. or higher, and pads.Type: GrantFiled: February 20, 2006Date of Patent: May 25, 2010Assignee: Hitachi, Ltd.Inventors: Masahiro Matsumoto, Hiroshi Nakano, Masamichi Yamada, Keiji Hanzawa, Izumi Watanabe, Keiichi Nakada, Yasuhiro Kanamaru
-
Patent number: 7719052Abstract: The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.Type: GrantFiled: January 25, 2008Date of Patent: May 18, 2010Assignee: Renesas Technology Corp.Inventors: Fumitoshi Ito, Yoshiyuki Kawashima, Takeshi Sakai, Yasushi Ishii, Yasuhiro Kanamaru, Takashi Hashimoto, Makoto Mizuno, Kousuke Okuyama, Yukiko Manabe
-
Patent number: 7617723Abstract: The coupling capacitance of the wiring portions of a thermal type flow rate measuring apparatus is reduced so as to prevent a drop in the response characteristics. A detection element of the thermal type flow rate measuring apparatus includes a planar substrate made of silicon, ceramic, or the like, in which a diaphragm is formed. On the surface of the diaphragm, there are disposed a heat-generating resistor as a heat-generating element that is heated to a predetermined temperature difference from the temperature of air flow to be measured, a heat-generating element temperature-detecting resistor for detecting the temperature of the heat-generating resistor, and temperature-detecting resistors disposed on both sides of the heat-generating resistor. The detection element also includes wiring portions which have connecting terminals electrically connected to the heat-generating resistor and a wiring pattern electrically connected with the surface of the planar substrate.Type: GrantFiled: June 20, 2007Date of Patent: November 17, 2009Assignee: Hitachi, Ltd.Inventors: Masahiro Matsumoto, Masamichi Yamada, Hiroshi Nakano, Keiji Hanzawa, Yasuhiro Kanamaru
-
Patent number: 7472591Abstract: An object of the invention is to realize a thermal gas flow sensor capable of reducing time fluctuation of a heating resistor. A heating resistor 3 and thermometric resistors 4 and 14 are formed on a surface of a thin-wall portion 2. Electrode drawn wires 18 to 23 and pad portions 8 to 13 are formed so as to draw signal lines from the heating resistor 3 and the thermometric resistors 4 and 14. Contact portions 24 to 29 are formed to come in contact with the heating resistor 3, the thermometric resistors 4 and 14, and the electrode drawn wires 18 to 23. The heating resistor 3 and the thermometric resistors 4 and 14 are covered with protective films 30a, 30b, and 31a and insulating films 31b and 30c. The protective films 31a and 31b are formed of a dense film formed of nitride or the like. A part coming in contact with a drawn wire portion 34 and the heating resistor 3 is covered with a contact barrier metal film 36 (titanium-based electrical conductor such as titanium nitride, titanium tungsten, and titanium).Type: GrantFiled: July 23, 2007Date of Patent: January 6, 2009Assignee: Hitachi, Ltd.Inventors: Yasuhiro Kanamaru, Keiji Hanzawa
-
Publication number: 20090000372Abstract: Conventional thermal flow measurement devices lack consideration for automobiles in severe environments. A detection element of the thermal flow measurement device according to the present invention is structured by the provision of a planar substrate made of a material having good thermal conductivity, such as silicon or ceramic, with a thin-walled portion (diaphragm). On the surface of the thin-walled portion, the detection element comprises a heat element as a heater heated to a temperature being different to a predetermined extent from the temperature of the air flow to be measured, temperature-detecting resistors as temperature-detecting means on both sides of the heat element, wiring portions formed of electrical conductors that draw signal lines from the heat element and the temperature-detecting resistors and that have a melting point of 2000° C. or higher, and pads.Type: ApplicationFiled: February 20, 2006Publication date: January 1, 2009Inventors: Masahiro Matsumoto, Hiroshi Nakano, Masamichi Yamada, Keiji Hanzawa, Izumi Watanabe, Keiichi Nakada, Yasuhiro Kanamaru
-
Publication number: 20080151629Abstract: The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.Type: ApplicationFiled: January 25, 2008Publication date: June 26, 2008Inventors: Fumitoshi ITO, Yoshiyuki Kawashima, Takeshi Sakai, Yasushi Ishii, Yasuhiro Kanamaru, Takashi Hashimoto, Makoto Mizuno, Kousuke Okuyama, Yukiko Manabe
-
Patent number: 7349250Abstract: The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.Type: GrantFiled: July 15, 2005Date of Patent: March 25, 2008Assignee: Renesas Technology Corp.Inventors: Fumitoshi Ito, Yoshiyuki Kawashima, Takeshi Sakai, Yasushi Ishii, Yasuhiro Kanamaru, Takashi Hashimoto, Makoto Mizuno, Kousuke Okuyama, Yukiko Manabe
-
Publication number: 20080047341Abstract: An object of the invention is to realize a thermal gas flow sensor capable of reducing time fluctuation of a heating resistor. A heating resistor 3 and thermometric resistors 4 and 14 are formed on a surface of a thin-wall portion 2. Electrode drawn wires 18 to 23 and pad portions 8 to 13 are formed so as to draw signal lines from the heating resistor 3 and the thermometric resistors 4 and 14. Contact portions 24 to 29 are formed to come in contact with the heating resistor 3, the thermometric resistors 4 and 14, and the electrode drawn wires 18 to 23. The heating resistor 3 and the thermometric resistors 4 and 14 are covered with protective films 30a, 30b, and 31a and insulating films 31b and 30c. The protective films 31a and 31b are formed of a dense film formed of nitride or the like. A part coming in contact with a drawn wire portion 34 and the heating resistor 3 is covered with a contact barrier metal film 36 (titanium-based electrical conductor such as titanium nitride, titanium tungsten, and titanium).Type: ApplicationFiled: July 23, 2007Publication date: February 28, 2008Applicant: Hitachi, Ltd.Inventors: Yasuhiro KANAMARU, Keiji Hanzawa
-
Publication number: 20080016958Abstract: The coupling capacitance of the wiring portions of a thermal type flow rate measuring apparatus is reduced so as to prevent a drop in the response characteristics. A detection element of the thermal type flow rate measuring apparatus includes a planar substrate made of silicon, ceramic, or the like, in which a diaphragm is formed. On the surface of the diaphragm, there are disposed a heat-generating resistor as a heat-generating element that is heated to a predetermined temperature difference from the temperature of air flow to be measured, a heat-generating element temperature-detecting resistor for detecting the temperature of the heat-generating resistor, and temperature-detecting resistors disposed on both sides of the heat-generating resistor. The detection element also includes wiring portions which have connecting terminals electrically connected to the heat-generating resistor and a wiring pattern electrically connected with the surface of the planar substrate.Type: ApplicationFiled: June 20, 2007Publication date: January 24, 2008Inventors: Masahiro Matsumoto, Masamichi Yamada, Hiroshi Nakano, Keiji Hanzawa, Yasuhiro Kanamaru
-
Patent number: 7087955Abstract: A semiconductor device has a nonvolatile memory employing a split-gate type memory cell structure, using a nitride film as a charge storage layer. An n-type semiconductor region is formed in a main surface of a semiconductor substrate, and then, a memory gate electrode of a memory cell of a split gate type and a charge storage layer are formed over the semiconductor region. Subsequently, side walls are formed on side surfaces of the memory gate electrode, and a photoresist pattern is formed over the main surface of the semiconductor substrate. The photoresist pattern serves as an etching mask, and a part of the main surface of the semiconductor substrate is removed by etching to form a dent. In the region of the dent, the n-type semiconductor region is removed. Then, a p-type semiconductor region for forming a channel of an nMIS transistor for selecting a memory cell is formed.Type: GrantFiled: March 30, 2004Date of Patent: August 8, 2006Assignee: Renesas Technology Corp.Inventors: Yoshiyuki Kawashima, Fumitoshi Ito, Takeshi Sakai, Yasushi Ishii, Yasuhiro Kanamaru, Takashi Hashimoto, Makoto Mizuno, Kousuke Okuyama
-
Publication number: 20060077713Abstract: The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.Type: ApplicationFiled: July 15, 2005Publication date: April 13, 2006Inventors: Fumitoshi Ito, Yoshiyuki Kawashima, Takeshi Sakai, Yasushi Ishii, Yasuhiro Kanamaru, Takashi Hashimoto, Makoto Mizuno, Kousuke Okuyama, Yukiko Manabe
-
Publication number: 20040188753Abstract: A semiconductor device has a nonvolatile memory employing a split-gate type memory cell structure, using a nitride film as a charge storage layer. An n-type semiconductor region is formed in a main surface of a semiconductor substrate, and then, a memory gate electrode of a memory cell of a split gate type and a charge storage layer are formed over the semiconductor region. Subsequently, side walls are formed on side surfaces of the memory gate electrode, and a photoresist pattern is formed over the main surface of the semiconductor substrate. The photoresist pattern serves as an etching mask, and a part of the main surface of the semiconductor substrate is removed by etching to form a dent. In the region of the dent, the n-type semiconductor region is removed. Then, a p-type semiconductor region for forming a channel of an nMIS transistor for selecting a memory cell is formed.Type: ApplicationFiled: March 30, 2004Publication date: September 30, 2004Inventors: Yoshiyuki Kawashima, Fumitoshi Ito, Takeshi Sakai, Yasushi Ishii, Yasuhiro Kanamaru, Takashi Hashimoto, Makoto Mizuno, Kousuke Okuyama