Patents by Inventor Yasuhiro Kanda

Yasuhiro Kanda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Contact structure, method of forming the same, semiconductor device, and method of manufacturing the same
    Patent number: 6657301
    Abstract: A ternary metal silicide layer is formed between a silicon substrate and a barrier layer, in a contact structure including: a substrate having a silicon part; an insulating layer formed on the substrate, and having a connection hole that reaches the silicon part, a barrier layer formed at least on an inner surface of the connection hole; and a conductive member buried inside the barrier layer.
    Type: Grant
    Filed: December 20, 2001
    Date of Patent: December 2, 2003
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kazuyoshi Maekawa, Yasuhiro Kanda
  • Method of producing a semiconductor device
    Patent number: 6599820
    Abstract: A method of producing a semiconductor device having a polymetal wiring structure fabricated by a polycrystalline silicon film, a reaction preventing film, and a tungsten film comprising steps of forming a polycrystalline silicon film 4 and a tungsten nitride film 13 on a silicon substrate 1; forming a tungsten film 14 using a target of tungsten containing fluorine of 10 ppm or less by a sputtering method; and forming a gate electrode 15 by patterning a polycrystalline silicon film 4, the tungsten nitride film 13, and the tungsten film 14, whereby a content of fluorine can be reduced, a film separation is prevented, and a preferable transistor property is obtainable.
    Type: Grant
    Filed: October 25, 2000
    Date of Patent: July 29, 2003
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Yasuhiro Kanda, Mitsuo Kimoto, Kazuyoshi Maekawa, Noboru Sekiguchi
  • Contact structure, method of forming the same, semiconductor device, and method of manufacturing the same
    Publication number: 20030006504
    Abstract: A ternary metal silicide layer is formed between a silicon substrate and a barrier layer, in a contact structure including: a substrate having a silicon part; an insulating layer formed on the substrate, and having a connection hole that reaches the silicon part, a barrier layer formed at least on an inner surface of the connection hole; and a conductive member buried inside the barrier layer.
    Type: Application
    Filed: December 20, 2001
    Publication date: January 9, 2003
    Applicant: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kazuyoshi Maekawa, Yasuhiro Kanda