Patents by Inventor Yasuhiro Kawakami
Yasuhiro Kawakami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11916112Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as a device surface, a second main surface at a side opposite to the first main surface, and a side surface connecting the first main surface and the second main surface, a main surface insulating layer including an insulating material, covering the first main surface of the SiC semiconductor layer, and having an insulating side surface continuous to the side surface of the SiC semiconductor layer, and a boundary modified layer including a first region that is modified to be of a property differing from the SiC monocrystal and a second region that is modified to be of a property differing from the insulating material, and being formed across the side surface of the SiC semiconductor layer and the insulating side surface of the main surface insulating layer.Type: GrantFiled: August 8, 2019Date of Patent: February 27, 2024Assignee: ROHM CO., LTD.Inventors: Yasuhiro Kawakami, Yuki Nakano, Masaya Ueno, Seiya Nakazawa, Sawa Haruyama, Yasunori Kutsuma
-
Publication number: 20230223433Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal that is constituted of a hexagonal crystal and having a first main surface as a device surface facing a c-plane of the SiC monocrystal and has an off angle inclined with respect to the c-plane, a second main surface at a side opposite to the first main surface, and a side surface facing an a-plane of the SiC monocrystal and has an angle less than the off angle with respect to a normal to the first main surface when the normal is 0°.Type: ApplicationFiled: February 22, 2023Publication date: July 13, 2023Inventors: Yuki NAKANO, Masaya UENO, Sawa HARUYAMA, Yasuhiro KAWAKAMI, Seiya NAKAZAWA, Yasunori KUTSUMA
-
Publication number: 20230223445Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.Type: ApplicationFiled: March 8, 2023Publication date: July 13, 2023Inventors: Masaya UENO, Yuki NAKANO, Sawa HARUYAMA, Yasuhiro KAWAKAMI, Seiya NAKAZAWA, Yasunori KUTSUMA
-
Publication number: 20230197791Abstract: A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.Type: ApplicationFiled: February 15, 2023Publication date: June 22, 2023Inventor: Yasuhiro KAWAKAMI
-
Publication number: 20230196466Abstract: There is provided a method performed by a processor. The method comprises: showing a set of security candidates on a display device; receiving from an input device a selection input indicating a selection of two or more securities to be added to an ideal portfolio from the set of security candidates; adding the two or more securities to the ideal portfolio; determining an ideal allocation for the ideal portfolio such that an ideal expectation of return of the ideal portfolio and an ideal risk value indicating a magnitude of variation in the return of the ideal portfolio satisfy a predefined condition; and showing the ideal allocation on the display device.Type: ApplicationFiled: December 19, 2022Publication date: June 22, 2023Inventors: Yasuhiro Kawakami, Soh Kaijima, Kimihiro Saitoh
-
Patent number: 11626490Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.Type: GrantFiled: August 8, 2019Date of Patent: April 11, 2023Assignee: ROHM CO., LTD.Inventors: Masaya Ueno, Yuki Nakano, Sawa Haruyama, Yasuhiro Kawakami, Seiya Nakazawa, Yasunori Kutsuma
-
Patent number: 11621319Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal that is constituted of a hexagonal crystal and having a first main surface as a device surface facing a c-plane of the SiC monocrystal and has an off angle inclined with respect to the c-plane, a second main surface at a side opposite to the first main surface, and a side surface facing an a-plane of the SiC monocrystal and has an angle less than the off angle with respect to a normal to the first main surface when the normal is 0°.Type: GrantFiled: August 8, 2019Date of Patent: April 4, 2023Assignee: ROHM CO., LTD.Inventors: Yuki Nakano, Masaya Ueno, Sawa Haruyama, Yasuhiro Kawakami, Seiya Nakazawa, Yasunori Kutsuma
-
Patent number: 11610970Abstract: A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.Type: GrantFiled: April 12, 2021Date of Patent: March 21, 2023Assignee: ROHM CO., LTD.Inventor: Yasuhiro Kawakami
-
Publication number: 20210296448Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as a device surface, a second main surface at a side opposite to the first main surface, and a side surface connecting the first main surface and the second main surface, a main surface insulating layer including an insulating material, covering the first main surface of the SiC semiconductor layer, and having an insulating side surface continuous to the side surface of the SiC semiconductor layer, and a boundary modified layer including a first region that is modified to be of a property differing from the SiC monocrystal and a second region that is modified to be of a property differing from the insulating material, and being formed across the side surface of the SiC semiconductor layer and the insulating side surface of the main surface insulating layer.Type: ApplicationFiled: August 8, 2019Publication date: September 23, 2021Inventors: Yasuhiro KAWAKAMI, Yuki NAKANO, Masaya UENO, Seiya NAKAZAWA, Sawa HARUYAMA, Yasunori KUTSUMA
-
Publication number: 20210234006Abstract: A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.Type: ApplicationFiled: April 12, 2021Publication date: July 29, 2021Inventor: Yasuhiro KAWAKAMI
-
Publication number: 20210233994Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal that is constituted of a hexagonal crystal and having a first main surface as a device surface facing a c-plane of the SiC monocrystal and has an off angle inclined with respect to the c-plane, a second main surface at a side opposite to the first main surface, and a side surface facing an a-plane of the SiC monocrystal and has an angle less than the off angle with respect to a normal to the first main surface when the normal is 0°.Type: ApplicationFiled: August 8, 2019Publication date: July 29, 2021Inventors: Yuki NAKANO, Masaya UENO, Sawa HARUYAMA, Yasuhiro KAWAKAMI, Seiya NAKAZAWA, Yasunori KUTSUMA
-
Publication number: 20210234007Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.Type: ApplicationFiled: August 8, 2019Publication date: July 29, 2021Inventors: Masaya UENO, Yuki NAKANO, Sawa HARUYAMA, Yasuhiro KAWAKAMI, Seiya NAKAZAWA, Yasunori KUTSUMA
-
Patent number: 11004939Abstract: A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.Type: GrantFiled: February 10, 2020Date of Patent: May 11, 2021Assignee: ROHM CO., LTD.Inventor: Yasuhiro Kawakami
-
Publication number: 20200176572Abstract: A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.Type: ApplicationFiled: February 10, 2020Publication date: June 4, 2020Inventor: Yasuhiro KAWAKAMI
-
Patent number: 10600873Abstract: A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.Type: GrantFiled: November 20, 2018Date of Patent: March 24, 2020Assignee: ROHM CO., LTD.Inventor: Yasuhiro Kawakami
-
Patent number: 10251202Abstract: A wireless communication system includes a first node as a source node having a wireless communication function, a second node as a destination node having a wireless communication function, and one or more third nodes configured to relay wireless communication between the first node and the second node. While a communication path through which data is sent from the first node to the second node is not established, the first node and the one or more third nodes send data in broadcast. After determining a destination in at least a part of the communication path from the first node to the second node, a node out of the first node and the one or more third nodes which has the determined destination sends data to the determined destination in unicast.Type: GrantFiled: November 19, 2014Date of Patent: April 2, 2019Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Masanori Minamiyama, Yasuhiro Kawakami
-
Publication number: 20190088746Abstract: A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.Type: ApplicationFiled: November 20, 2018Publication date: March 21, 2019Inventor: Yasuhiro KAWAKAMI
-
Patent number: 10170562Abstract: A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.Type: GrantFiled: September 18, 2017Date of Patent: January 1, 2019Assignee: ROHM CO., LTD.Inventor: Yasuhiro Kawakami
-
Patent number: 9888749Abstract: An accessory includes an accessory frame body having a pair of bearing recesses positioned at a prescribed spacing, and a decorative member held in a swingable state across the region between the bearing recesses of the accessory frame body, the decorative member extending in the horizontal direction after curving upward at a prescribed location, and having formed at the extended ends, protruding to both sides, swinging arm sections with downwardly-pointing pivoting support shafts, the pivoting support shafts of the swinging arm sections engaging with the bearing recesses formed in the accessory frame body, thereby attaching the decorative member to the accessory frame body in a freely swingable state.Type: GrantFiled: March 8, 2017Date of Patent: February 13, 2018Assignee: Top Jewelry Co., Ltd.Inventor: Yasuhiro Kawakami
-
Publication number: 20180006123Abstract: A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm. A method for manufacturing a semiconductor device according to the present invention includes: a step of forming a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, on the surface of a first conductive-type SiC semiconductor layer; and a step for heat treating the Schottky metal whilst the surface thereof is exposed, and structuring the junction of the SiC semiconductor layer to the Schottky metal to be planar, or to have recesses and protrusions of equal to or less than 5 nm.Type: ApplicationFiled: September 18, 2017Publication date: January 4, 2018Inventor: Yasuhiro KAWAKAMI