Patents by Inventor Yasuhiro Kawakami

Yasuhiro Kawakami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200176572
    Abstract: A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.
    Type: Application
    Filed: February 10, 2020
    Publication date: June 4, 2020
    Inventor: Yasuhiro KAWAKAMI
  • Patent number: 10600873
    Abstract: A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: March 24, 2020
    Assignee: ROHM CO., LTD.
    Inventor: Yasuhiro Kawakami
  • Patent number: 10251202
    Abstract: A wireless communication system includes a first node as a source node having a wireless communication function, a second node as a destination node having a wireless communication function, and one or more third nodes configured to relay wireless communication between the first node and the second node. While a communication path through which data is sent from the first node to the second node is not established, the first node and the one or more third nodes send data in broadcast. After determining a destination in at least a part of the communication path from the first node to the second node, a node out of the first node and the one or more third nodes which has the determined destination sends data to the determined destination in unicast.
    Type: Grant
    Filed: November 19, 2014
    Date of Patent: April 2, 2019
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Masanori Minamiyama, Yasuhiro Kawakami
  • Publication number: 20190088746
    Abstract: A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.
    Type: Application
    Filed: November 20, 2018
    Publication date: March 21, 2019
    Inventor: Yasuhiro KAWAKAMI
  • Patent number: 10170562
    Abstract: A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.
    Type: Grant
    Filed: September 18, 2017
    Date of Patent: January 1, 2019
    Assignee: ROHM CO., LTD.
    Inventor: Yasuhiro Kawakami
  • Patent number: 9888749
    Abstract: An accessory includes an accessory frame body having a pair of bearing recesses positioned at a prescribed spacing, and a decorative member held in a swingable state across the region between the bearing recesses of the accessory frame body, the decorative member extending in the horizontal direction after curving upward at a prescribed location, and having formed at the extended ends, protruding to both sides, swinging arm sections with downwardly-pointing pivoting support shafts, the pivoting support shafts of the swinging arm sections engaging with the bearing recesses formed in the accessory frame body, thereby attaching the decorative member to the accessory frame body in a freely swingable state.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: February 13, 2018
    Assignee: Top Jewelry Co., Ltd.
    Inventor: Yasuhiro Kawakami
  • Publication number: 20180006123
    Abstract: A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm. A method for manufacturing a semiconductor device according to the present invention includes: a step of forming a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, on the surface of a first conductive-type SiC semiconductor layer; and a step for heat treating the Schottky metal whilst the surface thereof is exposed, and structuring the junction of the SiC semiconductor layer to the Schottky metal to be planar, or to have recesses and protrusions of equal to or less than 5 nm.
    Type: Application
    Filed: September 18, 2017
    Publication date: January 4, 2018
    Inventor: Yasuhiro KAWAKAMI
  • Patent number: 9799733
    Abstract: A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm. A method for manufacturing a semiconductor device according to the present invention includes: a step of forming a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, on the surface of a first conductive-type SiC semiconductor layer; and a step for heat treating the Schottky metal while the surface thereof is exposed, and structuring the junction of the SiC semiconductor layer to the Schottky metal to be planar, or to have recesses and protrusions of equal to or less than 5 nm.
    Type: Grant
    Filed: June 5, 2013
    Date of Patent: October 24, 2017
    Assignee: ROHM CO., LTD.
    Inventor: Yasuhiro Kawakami
  • Publication number: 20160295453
    Abstract: A wireless communication system includes a first node as a source node having a wireless communication function, a second node as a destination node having a wireless communication function, and one or more third nodes configured to relay wireless communication between the first node and the second node. While a communication path through which data is sent from the first node to the second node is not established, the first node and the one or more third nodes send data in broadcast. After determining a destination in at least a part of the communication path from the first node to the second node, a node out of the first node and the one or more third nodes which has the determined destination sends data to the determined destination in unicast.
    Type: Application
    Filed: November 19, 2014
    Publication date: October 6, 2016
    Applicants: Panasonic Intellectual Property Management Co., Ltd., Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Masanori MINAMIYAMA, Yasuhiro KAWAKAMI
  • Publication number: 20150129896
    Abstract: A semiconductor device according to the present invention includes a first conductive-type SiC semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm. A method for manufacturing a semiconductor device according to the present invention includes: a step of forming a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, on the surface of a first conductive-type SiC semiconductor layer; and a step for heat treating the Schottky metal whilst the surface thereof is exposed, and structuring the junction of the SiC semiconductor layer to the Schottky metal to be planar, or to have recesses and protrusions of equal to or less than 5 nm.
    Type: Application
    Filed: June 5, 2013
    Publication date: May 14, 2015
    Applicant: ROHM CO., LTD.
    Inventor: Yasuhiro Kawakami
  • Publication number: 20110080398
    Abstract: In a writing device, a controller controls an authentication communication unit so as to transmit authentication data to a display device, prior to writing main data into the display device, in order to specify the display device into which the main data is to be written. After carrying out the authentication, the controller controls a main communication unit so as to transmit the main data stored in a memory to the display device into which the main data is to be written, by wireless communication. In the display device, a controller controls an authentication communication unit so as to receive the authentication data from the writing device. The controller controls a main communication unit so as to receive the main data from the writing device by wireless communication after the completion of the authentication. Therefore, when the main data is written into the display device from the writing device, it is possible to avoid wiring problems, and provide the display device with an improved appearance.
    Type: Application
    Filed: June 19, 2009
    Publication date: April 7, 2011
    Applicant: PANASONIC ELECTRIC WORKS CO., LTD.
    Inventors: Yasuhiro Kawakami, Sadamitsu Koike
  • Publication number: 20040105129
    Abstract: An image processing apparatus performing image processing when a printing resolution of an image output apparatus is higher than a reading resolution of an image input apparatus, so that image data read by the image input apparatus is converted to image data having a high resolution to be outputted from the image output apparatus. When an original contains both a text and a picture, the apparatus performs image-region segmentation processing to identify the text and the picture, and increasing a resolution of a text region to be higher than a resolution of a picture region within an output image of the original, while making the number of pixels equal in the entire output image after binarization of each region.
    Type: Application
    Filed: November 21, 2003
    Publication date: June 3, 2004
    Inventor: Yasuhiro Kawakami
  • Patent number: 6647522
    Abstract: A semiconductor device having multiple memory circuits of varying sizes includes scan test circuitry that enables the memories to be simultaneous loaded with pattern data and tested. A first memory circuit has a first memory, a first address scan chain that receives serial scan-in address data and generates a first address signal, and a first data scan chain that receives serial scan-in data and generates a first data input signal. A second memory circuit has a second memory, a second address scan chain that receives the serial scan-in address data and generates a second address signal, and a second data scan chain that receives the serial scan-in data and generates a second data input signal.
    Type: Grant
    Filed: June 1, 2000
    Date of Patent: November 11, 2003
    Assignee: Fujitsu Limited
    Inventors: Hideaki Nakahara, Masahiko Sudo, Yasuhiro Kawakami, Terumi Yoshimura, Kiminori Kato, Tetsuya Hiramatsu
  • Patent number: 5584914
    Abstract: The membrane deaerator according to the present invention includes a plurality of membrane deaerator modules and a water sealed vacuum pump connected thereto. These modules are series-connected between a raw water supply line and a deaeration water supply line. A first vacuum pump is connected to a first deaerator module via a deaeration line, and a second vacuum pump is connected to a second deaerator module via the deaeration line. These vacuum pumps are each provided with a seal water supply line which is used to send the raw water introduced from the water supply line thereinto as seal water to each of the first and second vacuum pumps. A discharge line for the second vacuum pump is connected to the deaeration line for the first vacuum pump. In the membrane deaerator thus formed, the deaeration performance is improved greatly, and a deaeration with dissolved oxygen concentration of several PPB can be carried out.
    Type: Grant
    Filed: February 7, 1995
    Date of Patent: December 17, 1996
    Assignees: Miura Co., Ltd, Miura Institute of Research & Development Co., Ltd.
    Inventors: Yasutoshi Senoo, Hitoshi Shiraishi, Norio Yasu, Yasuhiro Kawakami, Yukinori Tobisaka, Yasuo Ochi, Yasuhito Mitsukami, Toshitaka Shigematsu, Kazuhiro Tachino, Yasuhiro Miyagama, Kenichiro Takematsu, Nobuaki Yanagihara