Abstract: An arithmetic processing apparatus includes multiple selection circuits that are connected in series, wherein at least one selection circuit, the at least one selection circuit being served as a first selection circuit, includes a selection unit that selects a first input unit from two or more input units each receiving, from a source or a selection circuit in a previous stage, data and an identifier of a sender of the data; based on the two or more identifiers, and priority information indicating respective priorities for multiple sources connected to: a selection circuit upstream to the first selection circuit; and the first selection circuit; an update unit that updates, in the priority information, a priority for a first source indicated by a first identifier being received by the first input unit; and a transfer unit that transfers data and the first identifier passed through the first input unit, to a destination.

Abstract: A suspension device includes a partition wall body which partitions the outside of a hollow pipe into a working chamber and a reservoir first chamber, a first piston which partitions the working chamber into an extension-side first chamber and a contraction-side first chamber, a first flow passage which allows communication between the extension-side first chamber and the reservoir first chamber, an extension-side second chamber which communicates with the extension-side first chamber, a second piston which partitions the interior of the hollow pipe into a contraction-side second chamber and a reservoir second chamber, a first damping flow passage which allows communication between an extension-side chamber and a contraction-side chamber, and a second damping flow passage which allows communication between the contraction-side chamber and a reservoir. A cross-sectional area of the extension-side second chamber is larger than that of the hollow pipe.

Abstract: A semiconductor device has a semiconductor substrate where a plurality of elements or penetration electrodes are arranged and a trench is arranged to insulate and separate the plurality of elements or penetrating elements by surrounding the plurality of elements or penetration electrodes. The trench is arranged to penetrate both sides of the semiconductor substrate, and has an inner part where a space is arranged. Accordingly, it is possible to configure a semiconductor device having a structure to suppress insulation breakdown while simplifying a manufacturing process and improving yield of product manufacture.

Abstract: A suspension device includes two telescopic elements and achieves reduction in a size of a vehicle including the suspension device while securing rigidity sufficient to endure a load applied from a road surface to a wheel supported by the suspension device. A second outer member is smaller than a first outer member and is connected to the first outer member via a first connection portion and a second connection portion arranged in the extension/contraction direction of a second telescopic element, the second outer member is connected to the first outer member via a first connection portion and a second connection portion arranged in the extension/contraction direction of the second telescopic element.

Abstract: Provided is a PLC capable of changing a value of set information to be used in utilization of a communication protocol such as an FTP also during execution of a control program. A PLC includes a control program executing part configured to execute a control program, an acquiring part configured to acquire data from a field apparatus, a communicating part configured to make a communication with a server device by using the FTP, and a variable memory configured to store a variable to be used in utilization of the FTP and a value of the variable correspondingly to each other. The control program includes an instruction for transmitting data to the server device with the variable as an input variable. The PLC transmits the data to the server device based on the value of the variable when the instruction is started in order to execute the control program.

Abstract: A suspension device includes a partition wall body which partitions the outside of a hollow pipe into a working chamber and a reservoir first chamber, a first piston which partitions the working chamber into an extension-side first chamber and a contraction-side first chamber, a first flow passage which allows communication between the extension-side first chamber and the reservoir first chamber, an extension-side second chamber which communicates with the extension-side first chamber, a second piston which partitions the interior of the hollow pipe into a contraction-side second chamber and a reservoir second chamber, a first damping flow passage which allows communication between an extension-side chamber and a contraction-side chamber, and a second damping flow passage which allows communication between the contraction-side chamber and a reservoir. A cross-sectional area of the extension-side second chamber is larger than that of the hollow pipe.

Abstract: A semiconductor device includes: a SOI substrate including a support layer, a first insulation film and a SOI layer; a first circuit; a second circuit; and a trench separation element. The SOI substrate further includes a first region and a second region. The first region has the support layer, the first insulation film and the SOI layer, which are stacked in this order, and the second region has only the support layer. The trench separation element penetrates the support layer, the first insulation film and the SOI layer. The trench separation element separates the first region and the second region. The first circuit is disposed in the SOI layer of the first region. The second circuit is disposed in the support layer of the second region.

Abstract: In a manufacturing method for a semiconductor device having a coil layer part on a substrate, two support substrates each having a flat surface are prepared, and a component member is formed on the flat surface of each of the support substrates. The component member includes a wiring portion having a predetermined pattern and an insulation film surrounding the wiring portion. The wiring portion is provided with a connecting portion exposing from the insulation film. A coil layer part is formed by opposing and bonding the component members formed on the support substrates to each other while applying pressure in a condition where the flat surfaces of the support substrates are parallel to each other. A coil is formed in the coil layer part by connecting the wiring portions through the connecting portions.

Abstract: An arithmetic processing device includes: a communicating unit that communicates with another arithmetic processing device; a clock controller that requests a change in the frequency of a clock signal; a sequence controller that instructs the other arithmetic processing device to change the amount of data to be transmitted by the other arithmetic processing device to the arithmetic processing device per unit time when the sequence controller is requested by the clock controller to change the frequency of the clock signal; and a control circuit that changes the amount of data to be transmitted by the communicating unit to the other arithmetic processing device per unit time when the other arithmetic processing device instructs the arithmetic processing device to change the amount of data to be transmitted by the arithmetic processing device to the other arithmetic processing device per unit time.

Abstract: A semiconductor device includes a substrate, a first single conductor, a single insulator, and a second single conductor. The substrate includes first and second regions located adjacent to each other. The first region has blind holes, each of which has an opening on a front surface of the substrate. The second region has a through hole penetrating the substrate. A width of each blind hole is less than a width of the through hole. The first single conductor is formed on the front surface of the substrate in such a manner that an inner surface of each blind hole and an inner surface of the through hole are covered with the first single conductor. The single insulator is formed on the first single conductor. The second single conductor is formed on the single insulator and electrically insulated form the first single conductor.

Abstract: A semiconductor device includes a multilayer wiring substrate and a double-sided multi-electrode chip. The double-sided multi-electrode chip includes a semiconductor chip and has multiple electrodes on both sides of the semiconductor chip. The double-sided multi-electrode chip is embedded in the multilayer wiring substrate in such a manner that the double-sided multi-electrode chip is not exposed outside the multilayer wiring substrate. The electrodes of the double-sided multi-electrode chip are connected to wiring layers of the multilayer wiring substrate.

Abstract: An I/O controller 20 that is connected to a I/O controller 20a via a transfer path. The I/O controller 20 includes a buffer 22 including a plurality of entries that stores data to be transmitted to the I/O controller 20a. The I/O controller 20 includes a tag checker 29 that detects final data to be transmitted to the I/O controller 20a among the data stored in the entries in the buffer 22. The I/O controller 20 includes a PRBS generator 36 that generates test data for testing the transfer path and the I/O controller 20a, when the tag checker 29 detects the final data. The I/O controller 20 includes a SerDes macro 39 that transmits the test data generated by the PRBS generator 36 to the I/O controller 20a, after transmitting the final data detected by the tag checker 29.

Abstract: A semiconductor device includes: a SOI substrate including a support layer, a first insulation film and a SOI layer; a first circuit; a second circuit; and a trench separation element. The SOI substrate further includes a first region and a second region. The first region has the support layer, the first insulation film and the SOI layer, which are stacked in this order, and the second region has only the support layer. The trench separation element penetrates the support layer, the first insulation film and the SOI layer. The trench separation element separates the first region and the second region. The first circuit is disposed in the SOI layer of the first region. The second circuit is disposed in the support layer of the second region.

Abstract: A semiconductor device includes a semiconductor substrate, a vertical transistor, a horizontal transistor, a lead, wire-bonding pads, and penetrating electrodes. The semiconductor substrate has first and second surfaces and includes a first surface portion adjacent to the first surface. The vertical transistor includes first and second electrodes on the first surface and a third electrode on the second surface. The horizontal transistor includes first, second, and third electrodes on the first surface. The vertical transistor and the horizontal transistor further include PN junction parts in the first surface portion. The lead is disposed to the first surface and is electrically coupled with the first electrode of the vertical transistor. The wire-bonding pads are disposed on the second surface. The second electrode of the vertical transistor and the first to third electrodes of the horizontal transistor are electrically coupled with the wire-boding pads through the penetrating electrodes.

Abstract: A semiconductor device includes: a SOI substrate including a support layer, a first insulation film and a SOI layer; a first circuit; a second circuit; and a trench separation element. The SOI substrate further includes a first region and a second region. The first region has the support layer, the first insulation film and the SOI layer, which are stacked in this order, and the second region has only the support layer. The trench separation element penetrates the support layer, the first insulation film and the SOI layer. The trench separation element separates the first region and the second region. The first circuit is disposed in the SOI layer of the first region. The second circuit is disposed in the support layer of the second region.

Abstract: New and useful optical components are provided, for use in measuring projection lens characteristics of an optical imaging system that images a substrate. The optical components comprise an array of full NA imagers located at the substrate plane, and a relay system for imaging the imagers to a detector that is remote from the substrate.

Abstract: A suspension spring and a double-rod damper are installed in the interior of a front fork which comprises a body-side tube and a wheel-side tube. The double-rod damper comprises a piston housed in a cylinder, and an upper rod and a lower rod connected to the piston. The upper rod is formed to have a smaller diameter than the lower rod. By providing an orifice which allows working oil in an upper oil chamber formed around the upper rod to flow into a reservoir while causing the pressure in the upper oil chamber to increase, expansion and contraction of air bubbles mixed into working oil in the cylinder is prevented, thereby improving the response of a damping force generated in the front fork.

Abstract: A semiconductor device includes a substrate, a first single conductor, a single insulator, and a second single conductor. The substrate includes first and second regions located adjacent to each other. The first region has blind holes, each of which has an opening on a front surface of the substrate. The second region has a through hole penetrating the substrate. A width of each blind hole is less than a width of the through hole. The first single conductor is formed on the front surface of the substrate in such a manner that an inner surface of each blind hole and an inner surface of the through hole are covered with the first single conductor. The single insulator is formed on the first single conductor. The second single conductor is formed on the single insulator and electrically insulated form the first single conductor.

Abstract: An exposure apparatus includes a projection optical system and a liquid supply device. The projection optical system includes an image plane side optical member, which is arranged in an optical path of exposure light, and a lens barrel, which supports the image plane side optical member. The liquid supply device polishes the image plane side optical member in a state supported by the lens barrel to change the shape of the image plane side optical member.

Abstract: In a manufacturing method for a semiconductor device having a coil layer part on a substrate, two support substrates each having a flat surface are prepared, and a component member is formed on the flat surface of each of the support substrates. The component member includes a wiring portion having a predetermined pattern and an insulation film surrounding the wiring portion. The wiring portion is provided with a connecting portion exposing from the insulation film. A coil layer part is formed by opposing and bonding the component members formed on the support substrates to each other while applying pressure in a condition where the flat surfaces of the support substrates are parallel to each other. A coil is formed in the coil layer part by connecting the wiring portions through the connecting portions.