Abstract: A cleaning apparatus and method in accordance with the present invention includes a first inflow section, provided on a first side surface of a cleaning tank having a substantially rectangular parallelopiped shape, having two inflow openings, a second inflow section, provided on a second side surface facing the first side surface, having inflow openings, and outflow openings for releasing a cleaning liquid flown in from the first and second inflow sections. The cleaning liquid flowing in from the inflow openings forms complex and strong flows in the cleaning tank, thus removing contaminants on a cleaning target evenly and efficiently without nonuniformity and preventing stagnation of the cleaning liquid in the cleaning tank. The cleaning liquid released in filtered by a circulatory section and is allowed to flow into the cleaning tank again through a pipe.

Abstract: A liquid crystal display device has a plurality of gate bus wirings and source bus wirings on one of paired substrates. Moreover, a inter-layer insulating film made of an organic material is provided on thin film transistors of respective picture elements, and a picture element electrode is provided on the inter-layer insulating film. Furthermore, the liquid crystal display device is provided with an additional capacity common wiring which is provided on the inter-layer insulating film and forms an additional capacity section between the picture element electrode and the additional capacity common wiring. As a result, the liquid crystal display device can realize high quality and a high aperture ratio.

Abstract: With respect to at least one of a plurality of TFTs constituting a liquid crystal display device; a signal wiring having one end functioning as a gate electrode of the TFT is formed so as to include: a main portion, formed by patterning a first wiring layer, having a disconnected portion in the vicinity of an active region of the transistor; and a connecting portion, formed by patterning a second wiring layer which is different from the first wiring layer, for interconnecting the disconnected portion. Thus, the breakdown of the gate insulating film of the TFTs during the ion implantation process can be prevented.

Abstract: A thin-film semiconductor device having a CMOS inverter comprising a pair of n-type and p-type thin-film transistors, wherein the gate electrode of at least one of the paired thin-film transistors comprises a plurality of gate electrode sections spaced apart along the channel length. The channel region of the n-type thin-film transistor is doped with p-type impurities. This structure serves to reduce the leakage current and maintain high OFF resistance for a high source-drain voltage. Further, since a good symmetry of characteristics is maintained between the n-type and p-type thin-film transistors that constitute the CMOS inverter, no appreciable bias is caused in the output voltage of the CMOS inverter.

Abstract: In a method of inspecting an active matrix substrate of the invention, the active matrix substrate includes a pixel portion having a plurality of pixels arranged in a matrix, a plurality of scanning lines and data lines for driving the pixel portion, and a drive circuit having one and more video lines, one end of each of the plurality of data lines being connected to one of the video lines. The method of the invention includes the steps of: providing one or more inspecting lines, the other end of each of the plurality of data lines being connected to one of the inspecting lines; applying an inspecting signal to each of the inspecting lines, with the drive circuit being in operation; and inspecting the drive circuit and the plurality of data lines, based on at least one of the signals output from the or each of the video lines in accordance with the inspecting signals.

Abstract: An active matrix substrate is disclosed. The active matrix substrate of the invention includes: a plurality of scanning lines; a plurality of signal lines which cross the plurality of scanning lines; a plurality of picture element electrodes formed in regions defined by the plurality of scanning lines and the plurality of signal lines, respectively, part of each of the plurality of picture element electrodes overlapping at least one of the scanning lines and the signal lines adjacent to the picture element electrode; and a light blocking film covering the line.

Abstract: An active matrix display includes pixel electrodes (4) which are formed over an insulating layer (17). The insulating layer (17) covers signal lines (2) which supply an image signal and also connect one pixel electrode (4) with another. The insulating layer (17) also covers an additional capacitor common line (8). The pixel electrodes (4) at least partially overlay the signal lines (2) and the additional capacitor common line (8), thereby achieving a larger numerical aperture for the display.

Abstract: An active matrix display device having low resistance additional capacitor common lines and additional capacitors in which each of the additional capacitors has a first electrode connected to a switching element and a second electrode connected to the additional capacitor common line, and the additional capacitor common line is made of the same material as the signal lines, so that the possibility of signal delay on the additional capacitor common lines is reduced.