Abstract: Provided is a back illuminated photoelectric conversion device including a semiconductor substrate that has a first area that is not light-shielded by a light shielding layer, a second area that is light-shielded by the light shielding layer and in which a second pixel is arranged, and a third area that is arranged between the first area and the second area in a plan view. An attenuating member that attenuates a guided light entering the first area and propagating to the second area with the semiconductor substrate as a waveguide is arranged in the third area.

Abstract: A photoelectric conversion device includes a semiconductor layer formed of silicon, a plurality of pixels formed in the semiconductor layer, and a pixel separation portion is formed to separate each of the plurality of pixels, wherein the pixel separation portion includes a metal filling portion and a dielectric film provided on a side portion of the metal filling portion, a material of the metal filling portion is copper, a material of the dielectric film is a silicon oxide, and a thickness of the dielectric film is not less than 50 nm and not more than 270 nm.

Abstract: Provided is a back illuminated photoelectric conversion device including a semiconductor substrate that has a first area that is not light-shielded by a light shielding layer, a second area that is light-shielded by the light shielding layer and in which a second pixel is arranged, and a third area that is arranged between the first area and the second area in a plan view. An attenuating member that attenuates a guided light entering the first area and propagating to the second area with the semiconductor substrate as a waveguide is arranged in the third area.

Abstract: An organic light emitting device including a first electrode arranged on a first insulation layer, a second insulation layer that covers an end of the first electrode, an organic layer arranged on the first electrode and the second insulation layer and including a light emission layer, and a second electrode arranged on the organic layer, wherein in a cross section including the first insulation layer, the first electrode, and the second insulation layer, the second insulation layer has an eaves shape.

Abstract: The present invention provides a surface emitting laser the wavelength-tunable band of which is wide. The wavelength-tunable surface emitting laser includes a first reflector (101), an active layer (103) disposed on the first reflector (101), a beam portion (110) disposed over the active layer (103) with an air gap therebetween, and a second reflector (120) disposed on the beam portion (110). The second reflector (120) has a distributed Bragg reflector consisting of a stack of dielectric layers. The beam portion (110) has a distributed Bragg reflector consisting of a stack of conductive semiconductor layers.

Abstract: A surface emitting laser having a wide wavelength tunable band is provided. A surface emitting laser includes a first reflecting mirror (102); a second reflecting mirror (116); and an active layer (104) arranged between the first reflecting mirror (102) and the second reflecting mirror (116), a gap being formed between the second reflecting mirror (116) and the active layer (104), an oscillation wavelength being tunable. The second reflecting mirror (116) includes a beam (108) comprising a single-crystal semiconductor, and a dielectric multilayer film (110) supported by the beam (108), and the dielectric multilayer film (110) is arranged in an opening (118) formed in the beam (108).

Abstract: An organic light emitting device including a first electrode arranged on a first insulation layer, a second insulation layer that covers an end of the first electrode, an organic layer arranged on the first electrode and the second insulation layer and including a light emission layer, and a second electrode arranged on the organic layer, wherein in a cross section including the first insulation layer, the first electrode, and the second insulation layer, the second insulation layer has an eaves shape.

Abstract: The present invention provides a surface emitting laser the wavelength-tunable band of which is wide. The wavelength-tunable surface emitting laser includes a first reflector (101), an active layer (103) disposed on the first reflector (101), a beam portion (110) disposed over the active layer (103) with an air gap therebetween, and a second reflector (120) disposed on the beam portion (110). The second reflector (120) has a distributed Bragg reflector consisting of a stack of dielectric layers. The beam portion (110) has a distributed Bragg reflector consisting of a stack of conductive semiconductor layers.

Abstract: A surface emitting laser having a wide wavelength tunable band is provided. A surface emitting laser includes a first reflecting mirror (102); a second reflecting mirror (116); and an active layer (104) arranged between the first reflecting mirror (102) and the second reflecting mirror (116), a gap being formed between the second reflecting mirror (116) and the active layer (104), an oscillation wavelength being tunable. The second reflecting mirror (116) includes a beam (108) comprising a single-crystal semiconductor, and a dielectric multilayer film (110) supported by the beam (108), and the dielectric multilayer film (110) is arranged in an opening (118) formed in the beam (108).

Abstract: The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor.

Abstract: In order to provide a wavelength tunable surface emitting laser capable of improving a wavelength tuning efficiency, provided is a surface emitting laser, including: a first reflector; a semiconductor cavity including an active layer; and a second reflector, the first reflector, the semiconductor cavity, and the second reflector being formed in the stated order, a gap portion being formed between the first reflector and a semiconductor layer, a cavity length being tunable, in which the surface emitting laser has a high reflectivity structure formed between the gap portion and the semiconductor cavity, and an expression of “(?/2)×m+?/8<L<(?/2)×m+3?/8” is satisfied, where L is an optical thickness of the semiconductor cavity, m is an integer of 1 or larger, and ? is a center wavelength of laser oscillation.

Abstract: A surface emitting laser operable to change a wavelength of emitted light includes a first reflecting mirror, a second reflecting mirror, wherein a cavity is formed between the first reflecting mirror and the second reflecting mirror along the optical axis of the surface emitting laser, an active layer formed within the cavity, a region formed within the cavity, and a movable part situated within the region, the movable part having a refractive index different from a refractive index of the region. The wavelength of emitted light is changeable by changing the position of the movable part along the direction of the optical axis in the region.

Abstract: A surface emitting laser includes a lower reflector, an active layer, and an upper reflector that are arranged in that order; an air gap provided between the active layer and the upper reflector; and a slab provided on an optical path of the air gap and having a refractive index that is higher than a refractive index of the air gap. A position of at least one of the upper reflector and the lower reflector in an optical axis direction is changed to change a wavelength of emitted light. In the case where the position of the upper reflector is changed, a center of the slab in the optical axis direction is located between any antinode of a standing wave formed in the air gap and a node of the standing wave that is adjacent to and on an upper-reflector side of the antinode.

Abstract: In order to provide a wavelength tunable surface emitting laser capable of improving a wavelength tuning efficiency, provided is a surface emitting laser, including: a first reflector; a semiconductor cavity including an active layer; and a second reflector, the first reflector, the semiconductor cavity, and the second reflector being formed in the stated order, a gap portion being formed between the first reflector and a semiconductor layer, a cavity length being tunable, in which the surface emitting laser has a high reflectivity structure formed between the gap portion and the semiconductor cavity, and an expression of “(?/2)×m+?/8<L<(?/2)×m+3?/8” is satisfied, where L is an optical thickness of the semiconductor cavity, m is an integer of 1 or larger, and ? is a center wavelength of laser oscillation.

Abstract: A surface emitting laser includes a lower reflector, an active layer, and an upper reflector that are arranged in that order; an air gap provided between the active layer and the upper reflector; and a slab provided on an optical path of the air gap and having a refractive index that is higher than a refractive index of the air gap. A position of at least one of the upper reflector and the lower reflector in an optical axis direction is changed to change a wavelength of emitted light. In the case where the position of the upper reflector is changed, a center of the slab in the optical axis direction is located between any antinode of a standing wave formed in the air gap and a node of the standing wave that is adjacent to and on an upper-reflector side of the antinode.

Abstract: A surface emitting laser including a lower reflecting mirror, an active layer, and an upper reflecting mirror in that order, and having a gap portion between the active layer and the upper reflecting mirror, includes a movable portion provided on an optical path of the gap portion and having a refractive index different from a refractive index of the gap portion. A wavelength of light to be emitted is changed by changing positions in an optical-axis direction of at least two of the movable portion, the upper reflecting mirror, and the lower reflecting mirror.

Abstract: A surface emitting laser including a lower reflecting mirror, an active layer, and an upper reflecting mirror in that order, having an air gap between the active layer and the upper reflecting mirror, and being able to change a wavelength of light to be emitted, includes a light-intensity adjustment unit provided on an optical path of the air gap and having optical absorption or optical gain in a wavelength range of emission light of the surface emitting laser. The wavelength of the light to be emitted is changed by displacing the light-intensity adjustment unit and at least one of the upper reflecting mirror and the lower reflecting mirror.

Abstract: A surface light-emitting laser comprising an upper reflector, a lower reflector, and an active layer interposed therebetween, wherein when an optical distance between the upper reflector and the lower reflector is referred to as a first distance, and an optical distance between the lower reflector and the active layer is referred to as a second distance, positions of at least selected two of a group including the upper reflector, the lower reflector, and the active layer are changed so that the ratio between the first distance and the second distance is maintained within a range of ±25% from a certain value.

Abstract: A surface emitting laser operable to change a wavelength of emitted light includes a first reflecting mirror, a second reflecting mirror, wherein a cavity is formed between the first reflecting mirror and the second reflecting mirror along the optical axis of the surface emitting laser, an active layer formed within the cavity, a region formed within the cavity, and a movable part situated within the region, the movable part having a refractive index different from a refractive index of the region. The wavelength of emitted light is changeable by changing the position of the movable part along the direction of the optical axis in the region.

Abstract: A process for forming a microstructure of a nitride semiconductor including (1) preparing a semiconductor structure which has a second semiconductor layer formed of a group III nitride semiconductor containing at least Al formed on a principal plane of a first semiconductor layer formed of a group III nitride semiconductor containing no Al, and which has a hole that penetrates through the second semiconductor layer and is formed in the first semiconductor layer; (2) subjecting the semiconductor structure to heat treatment under a gas atmosphere including a nitrogen element after step (1) to form a crystal plane of the group III nitride semiconductor containing no Al, on at least a part of a side wall of the hole; and (3) forming a third semiconductor layer formed of a group III nitride semiconductor on the second semiconductor layer after step (2) to cover the upper part of the hole.