Abstract: A printing head is intended to achieve high reliability and a production method of the printing head is intended to achieve high yield at low cost. A liquid ejecting printing head employs a base body, in which an electrothermal transducer element, a driving functional element for driving the electrothermal transducer element, a wiring electrode connecting between the electrothermal transducer element and the driving functional element, and an insulation layer provided on the wiring electrode are formed on a substrate. The electrothermal transducer element has a heat generating resistor formed of a material selected from the group consisting TaN, HfB2, Poly-Si, Ta—Al, Ta—Ir, Au and Ag. A protective layer above the heat generating body is formed of an insulative compound deposited to be low density to high density in order.

Abstract: A printing head is intended to achieve high reliability and a production method of the printing head is intended to achieve high yield at low cost. A liquid ejecting printing head employs a base body, in which an electrothermal transducer element, a driving functional element for driving the electrothermal transducer element, a wiring electrode connecting between the electrothermal transducer element and the driving functional element, and an insulation layer provided on the wiring electrode are formed on a substrate. The electrothermal transducer element has a heat generating resistor formed of a material selected from the group consisting TaN, HfB2, Poly-Si, Ta—Al, Ta—Ir, Au and Ag. A protective layer above the heat generating body is formed of an insulative compound deposited to be low density to high density in order.

Abstract: A heat generating resistor comprised of a film composed of a TaN0.8-containing tantalum nitride material which is hardly deteriorated and is hardly varied in terms of the resistance value even upon continuous application of a relatively large quantity of an electric power thereto over a long period of time. A substrate for a liquid jet head comprising a support member and an electrothermal converting body disposed above said support member, said electrothermal converting body including a heat generating resistor layer capable of generating a thermal energy and electrodes being electrically connected to said heat generating resistor layer, said electrodes being capable of supplying an electric signal for demanding to generate said thermal energy to said heat generating resistor layer, characterized in that said heat generating resistor layer comprises a film composed of a TaN0.8-containing tantalum nitride material. A liquid jet head provided with said substrate for a liquid jet head.

Abstract: A method for forming a crystal, which comprises applying a crystal forming treatment on a substrate having a free surface on which a deposition surface (S.sub.NDS) with a small nucleation density and a deposition surface (S.sub.NDL) having a sufficiently small area for crystal growth only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said deposition surface (S.sub.NDS) are arranged adjacent to each other, thereby growing a single crystal from said single nucleus.

Abstract: A method for forming a crystal, which comprises applying a crystal forming treatment on a substrate having a free surface on which a deposition surface (S.sub.NDS) with a small nucleation density and a deposition surface (S.sub.NDL) having a sufficiently small area for crystal growth only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said deposition surface (S.sub.NDS) are arranged adjacent to each other, thereby growing a single crystal from said single nucleus.

Abstract: A method for producing a semiconductor article comprises the steps of preparing a first substrate having a non-porous semiconductor layer on a porous semiconductor region, forming unevenness on the surface at the side of said semiconductor layer of said first substrate; bonding the surface of said first substrate having said unevenness formed thereon to the surface of said second substrate so as to be in contact with each other, and removing said porous semiconductor under the state that said semiconductor layer is bonded to said second substrate to thereby transfer said semiconductor layer from said first substrate onto said second substrate.

Abstract: A method for producing a substrate for a recording head wherein a plurality of electro-thermal converting elements, a plurality of driving functional elements for respectively driving the electro-thermal converting elements and a plurality of wiring electrodes for respectively connecting each of the driving functional elements and each of the electro-thermal converting elements are formed on a supporting member by photolithography comprises forming the wiring electrodes by etching a material layer for the wiring electrodes while etchingwise removing a photoresist for masking the material layer for the wiring electrodes.

Abstract: A recording head for discharging ink by using thermal energy comprises a plurality of outlets for discharging ink and a substrate including a common substrate plate of P type, a plurality of electrothermal converting elements and a plurality of functional elements connected to the respective electrothermal converting elements and formed on the common substrate plate as well as the electrothermal converting elements. Each of the functional elements has a first semiconductor region of N type, a second semiconductor region of P type provided within the first semiconductor region and a third semiconductor region of N type provided within the second semiconductor region, so as to form a rectifying junction. The first, second and third semiconductor regions are formed by diffusion of impurity atoms in the common semiconductor substrate plate.

Abstract: A method for producing a semiconductor device containing steps of forming a stepped pattern on the surface of a semiconductor substrate and forming a gaseous grown crystal layer thereon, which comprises positioning an alignment pattern (for example 6c) included in the first-mentioned pattern diagonally with respect to an in-plane direction of faster pattern growth in said gaseous crystal growth.