Patents by Inventor Yasuhiro Negoro

Yasuhiro Negoro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6617183
    Abstract: A method for forming a p-type semiconductor film comprises the steps of: providing on a substrate a group II-VI compound semiconductor film which is doped with a p-type impurity and comprises either MgXZn1−XO (0≦X≦1) or CdXZn1−XO (0≦X≦1) and activating the p-type impurity by annealing the doped semiconductor film.
    Type: Grant
    Filed: April 19, 2001
    Date of Patent: September 9, 2003
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Michio Kadota, Yasuhiro Negoro, Yoshinori Miura
  • Patent number: 6416831
    Abstract: An evacuated package with highly reliable vacuum-sealing and a method for producing an evacuated package with the evacuatable package. A lid portion is joined onto a substrate with an element accommodated in an evacuated space formed by the substrate and the lid portion. A connecting hole in the lid portion extends from the space to the top face of the lid portion. A metal film is formed around the complete peripheral region of the opening of the connecting hole, and a thermo-melting material is joined to the metal film to close the opening of the connecting hole so as to seal the element in the evacuated space. Before closing the opening of the connecting hole with the thermo-melting material, the space is evacuated, and simultaneously, the thermo-melting material is melted by heat and left until completely degassed in a vacuum.
    Type: Grant
    Filed: December 18, 1997
    Date of Patent: July 9, 2002
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Tetsuzo Hara, Yasuhiro Negoro
  • Patent number: 6386033
    Abstract: An angular velocity sensor includes: a board in the form of a flat plate; a rotational vibrator extended to the right and left from a central axis vertical to the board at the center of rotational vibration over the board and supported at the location of the central axis by rotational supporting beams so as to be rotationally vibrated; a first vibrator located on the left side of the rotational vibrator and supported by first supporting beams; a second vibrator located on the right side of the rotational vibrator and supported by second supporting beams; a rotational vibration generator for vibrating the second vibrator backward and forward when the first vibrator is vibrated forward and backward by giving rotational vibration to the rotational vibrator; a first displacement detector for detecting displacement of the first vibrator vibrated to the right and left when an angular velocity is applied around the central axis of the rotational vibrator in the state that rotational vibration is given to the rotatio
    Type: Grant
    Filed: June 14, 1999
    Date of Patent: May 14, 2002
    Assignee: Murata Manufacturing Co.,
    Inventor: Yasuhiro Negoro
  • Patent number: 6313563
    Abstract: An edge reflection type surface acoustic wave device includes a surface acoustic wave substrate made of a piezoelectric single crystal and having first and second opposite edges, and at least one interdigital transducer disposed on the surface acoustic wave substrate. The surface acoustic wave device is constructed such that a Shear Horizontal type surface acoustic wave is reflected between the first and second opposite edges. The surface acoustic wave substrate is made of an ion-implanted piezoelectric single crystal substrate.
    Type: Grant
    Filed: March 28, 2000
    Date of Patent: November 6, 2001
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Michio Kadota, Hiroshi Kawai, Junya Ago, Hideya Horiuchi, Yasuhiro Negoro
  • Publication number: 20010034115
    Abstract: A method for forming a p-type semiconductor film comprises the steps of: providing on a substrate a group II-VI compound semiconductor film which is doped with a p-type impurity and comprises either MgxZn1-xO (0≦X≦1) or CdxZn1-xO (0≦X≦1) and activating the p-type impurity by annealing the doped semiconductor film.
    Type: Application
    Filed: April 19, 2001
    Publication date: October 25, 2001
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Michio Kadota, Yasuhiro Negoro, Toshinori Miura
  • Patent number: 5901031
    Abstract: A reference electrode is fixed on the bottom of a concave portion of a substrate. A movable electrode is provided so that its electrode face faces that of the reference electrode at an interval to form a capacitor by the movable and reference electrodes. A driving electrode for driving the movable electrode is fixed on the substrate at an interval from the movable electrode. The distance 2L between the driving and movable electrodes is twice the distance L between the movable and reference electrodes. An external bias voltage is applied between the driving and movable electrodes to deflect the movable electrode. This doubles the range of the displacement of the movable electrode, thereby increasing the capacity change rate of the variable capacitor.
    Type: Grant
    Filed: January 31, 1996
    Date of Patent: May 4, 1999
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Tsutomu Ishige, Yasuhiro Negoro, Yuji Iyoda, Yasutaka Fujii, Katsuhiko Tanaka
  • Patent number: 5892154
    Abstract: An acceleration detection device is provided which is capable of detecting accelerations in two or more directions. The base end of a beam is fixed to a support section on a board. A weight is provided in the front end of the beam which is formed so as to extend horizontally along the board surface with a gap with it and the surface of the board. The position of the center of gravity G of the weight is set at a position spaced perpendicularly apart from the center axis of the beam in order that the inertial moment acts when an acceleration along the length (in the X direction) of the beam is applied. The front end surface of the weight is formed into an upright surface of a movable electrode, and a fixed electrode is formed at a position facing the movable electrode with a gap therebetween.
    Type: Grant
    Filed: September 22, 1997
    Date of Patent: April 6, 1999
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Yasuhiro Negoro
  • Patent number: 5561248
    Abstract: An acceleration sensor having movable and stationary electrodes electrically insulated from each other in a reliable manner to improve the accuracy and sensitivity in the detection of acceleration. The acceleration sensor includes an upper substrate (1) of a low resistivity silicon material, a lower substrate (2) of an insulating material provided under the upper substrate (1), and an insulating groove (5) perforating the upper substrate (1) completely from the upper to lower side thereof and around the entire periphery of a support beam (4) in the upper substrate (1). By using the upper substrate (1), stationary blocks (6) are formed separately on the opposite sides of the support beam (4) in confronting relation therewith. As a result, the support beam (4) and the stationary blocks (6), each being formed of the same low resistance material, are electrically insulated from each other by the insulating groove (5).
    Type: Grant
    Filed: April 21, 1994
    Date of Patent: October 1, 1996
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Yasuhiro Negoro