Abstract: A reduced projection light source comprises a laser device for emitting laser light having a transverse mode of multimodes, and an etalon located between a chamber of the laser device and a total reflection mirror. The light source is used as an exposure light source for transfer printing an ultrafine pattern on a semiconductor wafer.

Abstract: Specification of an etalon included in a multimode, narrow-band oscillation excimer laster used as a light source for light exposure in photolithography are set to satisfy a relation S.lambda.W.lambda.R.lambda. (u,v)d.lambda..gtoreq..alpha., where .alpha. is an optical transfer function necessary for light exposure of resist according to a reticle pattern, R.lambda.(u,v) is an optical transfer function of monochromatic light for an illuminating system and a reduced-projection lens, W.lambda. is a weight which is applied to a waveform of a power spectrum in an oscillation laser beam at a wavelength .lambda.. Further, an inclination angle .lambda. of the etalon in its normal direction with respect to an optical axis when the etalon is provided between the chamber and rear mirror is set to satisfy a relation .theta.>tan.sup.

Abstract: A recess is formed on the upper surface of a cover sealing a laser chamber for accommodating plurality of capacitors for applying discharge voltage across a pair of discharge electrodes thus decreasing the cross-sectional area of a circuit loop passing discharge current. In a modified embodiment, a preliminary ionization gap is provided for a return rod constituting the circuit loop.