Abstract: For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film successively over a gate insulating film disposed over the main surface of a semiconductor substrate, and patterning them to form a gate electrode having a stacked structure consisting of the polycrystalline silicon film and tungsten silicide film. The polycrystalline silicon film has two regions, one region formed by an impurity-doped polycrystalline silicon and the other one formed by non-doped polycrystalline silicon. The tungsten silicide film is deposited so that the resistivity of it upon film formation would exceed 1000 ??cm.

Abstract: For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film successively over a gate insulating film disposed over the main surface of a semiconductor substrate, and patterning them to form a gate electrode having a stacked structure consisting of the polycrystalline silicon film and tungsten silicide film. The polycrystalline silicon film has two regions, one region formed by an impurity-doped polycrystalline silicon and the other one formed by non-doped polycrystalline silicon. The tungsten silicide film is deposited so that the resistivity of it upon film formation would exceed 1000 ??cm.

Abstract: For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film successively over a gate insulating film disposed over the main surface of a semiconductor substrate, and patterning them to form a gate electrode having a stacked structure consisting of the polycrystalline silicon film and tungsten silicide film. The polycrystalline silicon film has two regions, one region formed by an impurity-doped polycrystalline silicon and the other one formed by non-doped polycrystalline silicon. The tungsten silicide film is deposited so that the resistivity of it upon film formation would exceed 1000 ??cm.

Abstract: A method of protecting data stored in a memory of a welding controller provided with an EEPROM as a storage element capable of storing welding control data in a welding controller, thereby enhancing reliable protection of data stored in the EEPROM. The method of protecting data stored in a memory of a welding controller comprises the steps of providing the EEPROM having write validity control function means in the controller, using the EEPROM as a storage element for storing welding control data therein, writing the welding control data into the EEPROM and storing the same in the EEPROM, reading the welding control data from the EEPROM when the welding controller is used, and rendering the EEPROM transitive from a write disable state to a write enable state by the write validity control function when the welding control data is changed.

Abstract: For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film successively over a gate insulating film disposed over the main surface of a semiconductor substrate, and patterning them to form a gate electrode having a stacked structure consisting of the polycrystalline silicon film and tungsten silicide film. The polycrystalline silicon film has two regions, one region formed by an impurity-doped polycrystalline silicon and the other one formed by non-doped polycrystalline silicon. The tungsten silicide film is deposited so that the resistivity of it upon film formation would exceed 1000 ??cm.

Abstract: A welding system is capable of shortening length of connection lines and of effectively utilizing devices as a whole. The system includes a welding controller provided with an I/O interface, a controller unit provided with a programmable logic controller and connected to the I/O interface of the welding controller through a field bus interface serving as a communication link, a welding machine and general-purpose peripheral equipment. The welding controller controls the welding machine and the general-purpose peripheral equipment upon receipt of instructions from the programmable logic controller through the field bus interface.

Abstract: A method of protecting data stored in a memory of a welding controller provided with an EEPROM as a storage element capable of storing welding control data in a welding controller, thereby enhancing reliable protection of data stored in the EEPROM. The method of protecting data stored in a memory of a welding controller comprises the steps of providing the EEPROM having write validity control function means in the controller, using the EEPROM as a storage element for storing welding control data therein, writing the welding control data into the EEPROM and storing the same in the EEPROM, reading the welding control data from the EEPROM when the welding controller is used, and rendering the EEPROM transitive from a write disable state to a write enable state by the write validity control function when the welding control data is changed.

Abstract: A welding system capable of shortening length of connection lines and the of effectively utilizing devices as a whole. The system comprises a welding controller provided with an I/O interface, a controller provided with a programmable logic controller and connected to the I/O interface of the welding controller through a field bus interface serving as communication means, a welding machine and a general-purpose-purpose peripheral equipment, wherein the welding controller controls the welding machine and the general-purpose-purpose peripheral equipment upon receipt of instructions from the programmable logic controller through the field bus interface.