Patent number: 4668573
Abstract: A thin film for recording data which is formed on a substrate directly or via a protection layer, and which develops change in the arrangement of atoms upon irradiation with a recording beam, wherein an average composition in the direction of film thickness is represented by the general formula,A.sub.X B.sub.Y C.sub.Z D.sub..alpha. E.sub..beta.wherein X, Y, Z, .alpha. and .beta. are values that lie over the ranges of 0.ltoreq.X<30, 0.ltoreq.Y.ltoreq.40, 0.ltoreq.Z.ltoreq.70, 15.ltoreq.Y+Z.ltoreq.70, 10.ltoreq..alpha..ltoreq.65, 20.ltoreq..beta..ltoreq.70, E denotes at least one element between Se and S, D denotes at least one element among As, Sb, Si and Ge, C denotes at least one element among Bi, Sn and Pb, B denotes at least one element among Cu, Ag, Au, Sc, Y, Ti, Zr, V, Nb, Cr, Mo, Mn, Fe, Ru, Co, Rh, Ni and Pd, and A denotes an element or elements other than those elements denoted by E, D, C and B.
Type:
Grant
Filed:
January 16, 1986
Date of Patent:
May 26, 1987
Assignee:
Hitachi, Ltd.
Inventors:
Motoyasu Terao, Tetsuya Nishida, Yasuhiro Ohta, Shinkichi Horigome, Yasushi Miyauchi