Abstract: Disclosed is a copper-cobalt-silicon (Cu—Co—Si) alloy for electronic material with an improved balance among electro-conductivity, strength and bend formability, which includes 0.5 to 3.0% by mass of Co, 0.1 to 1.0% by mass of Si, and the balance of Cu and inevitable impurities, having a ratio of mass percentages of Co and Si (Co/Si) given as 3.5?Co/Si?5.0, having an average particle size of second phase particles, within the range of the particle size of 1 to 50 m seen in a cross-section taken in parallel with the direction of rolling, of 2 to 10 nm, and having an average distance between the adjacent second phase particles of 10 to 50 nm.

Abstract: Cu—Co—Si-based alloy strip, which has not only an excellent balance between strength and electrical conductivity but also suppressed hanging curl, is provided. The copper alloy strip for electronic materials comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, the following (a) is satisfied. (a) A diffraction peak height at ? angle 120° among diffraction peak intensities by ? scanning at ?=25° in a {200} pole figure is at least 10 times that of standard copper powder.

Abstract: A Cu—Si—Co-based alloy having an enhanced spring limit is provided. The copper alloy comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, a peak height at ? angle of 90° among diffraction peaks in {111} Cu plane with respect to {200} Cu plane by ? scanning at ?=35° is at least 2.5 times that of a standard copper powder.

Abstract: A copper alloy material suitable for materials for electronic and electrical equipments such as movable connectors having excellent bending workability and being able to show high electrical conductivity was achieved by a Cu—Co—Si alloy material containing 1.5 to 2.5 wt % of Co and 0.3 to 0.7 wt % of Si, having a Co/Si element ratio of 3.5 to 5.0, containing 3,000 to 150,000 second phase particles per mm2 having diameters of from 0.20 ?m or more to less than 1.00 ?m, having a grain size of 10 ?m or less, an electrical conductivity of 60% IACS or more, and good bending workability. The above alloy material contains 10 to 1,000 second phase particles per mm2 having diameters of from 1.00 to 5.00 ?m, the 0.2% yield strength may be 600 MPa or more, the temperature of hot heating performed after casting and before solution treatment is a temperature that is 45° C. or more higher than the solution treatment temperature selected below, the cooling rate from the temperature at the start of hot rolling to 600° C.

Abstract: Cu—Co—Si-based alloy strip, which has not only an excellent balance between strength and electrical conductivity but also suppressed hanging curl, is provided. The copper alloy strip for electronic materials comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, the following (a) is satisfied. (a) A diffraction peak height at ? angle 120° among diffraction peak intensities by ? scanning at ?=25° in a {200} pole figure is at least 10 times that of standard copper powder.

Abstract: A Cu—Si—Co-based alloy having an enhanced spring limit is provided. The copper alloy comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and inevitable impurities, wherein, from a result obtained from measurement of an X ray diffraction pole figure, using a rolled surface as a reference plane, a peak height at ? angle of 90° among diffraction peaks in {111} Cu plane with respect to {200} Cu plane by ? scanning at ?=35° is at least 2.5 times that of a standard copper powder.

Abstract: The present invention relates to a Cu—Co—Si—Zr alloy material which contains 1.0-2.5 wt % of Co, 0.2-0.7 wt % of Si and 0.001-0.5 wt % of Zr with the elemental ratio Co/Si being 3.5-5.0. The Cu—Co—Si—Zr alloy material contains second phase particles having a diameter of 0.20 ?m or more but less than 1.00 ?m at a density of 3,000-500,000 particles/mm2, and has a crystal grain size of 10 ?m or less, an electrical conductivity of 60% IACS or more and good bending workability. The alloy material can be produced by setting the temperature of heating that is carried out after casting and before a solution heat treatment to a temperature that is higher than the later-described solution heat treatment temperature by 45° C. or more, by setting the cooling rate from the start temperature of hot rolling to 600° C. to 100° C./min or less, and by selecting the solution heat treatment temperature from (50× Co wt %+775)° C. to (50× Co wt %+825)° C. (inclusive).

Abstract: Disclosed is a copper-cobalt-silicon (Cu—Co—Si) alloy for electronic material with an improved balance among electro-conductivity, strength and bend formability, which includes 0.5 to 3.0% by mass of Co, 0.1 to 1.0% by mass of Si, and the balance of Cu and inevitable impurities, having a ratio of mass percentages of Co and Si (Co/Si) given as 3.5?Co/Si?5.0, having an average particle size of second phase particles, within the range of the particle size of 1 to 50 m seen in a cross-section taken in parallel with the direction of rolling, of 2 to 10 nm, and having an average distance between the adjacent second phase particles of 10 to 50 nm.

Abstract: A Cu—Co—Si-based alloy that has even mechanical properties and that is provided with favorable mechanical and electrical properties as a copper alloy for an electronic material is provided. The copper alloy for an electronic material comprises 0.5% by mass to 3.0% by mass of Co, 0.1% by mass to 1.0% by mass of Si, and the balance Cu with inevitable impurities. An average grain size is in the range of 3 ?m to 15 ?m and an average difference between a maximum grain size and a minimum grain size in every observation field of 0.05 mm2 is 5 ?m or less.

Abstract: A copper alloy material suitable for materials for electronic and electrical equipments such as movable connectors having excellent bending workability and being able to show high electrical conductivity was achieved by a Cu—Co—Si alloy material containing 1.5 to 2.5 wt % of Co and 0.3 to 0.7 wt % of Si, having a Co/Si element ratio of 3.5 to 5.0, containing 3,000 to 150,000 second phase particles per mm2 having diameters of from 0.20 ?m or more to less than 1.00 ?m, having a grain size of 10 ?m or less, an electrical conductivity of 60% IACS or more, and good bending workability. The above alloy material contains 10 to 1,000 second phase particles per mm2 having diameters of from 1.00 to 5.00 ?m, the 0.2% yield strength may be 600 MPa or more, the temperature of hot heating performed after casting and before solution treatment is a temperature that is 45° C. or more higher than the solution treatment temperature selected below, the cooling rate from the temperature at the start of hot rolling to 600° C.