Abstract: A linear white light source 1 includes a base, a plurality of light emitting diode chips linearly disposed on the base and each generating ultraviolet light having a wavelength of not less than 330 nm nor more than 410 nm, and a phosphor layer continuously formed on the base to cover the plurality of light emitting diode chips and containing a red light emitting phosphor, a green light emitting phosphor, and a blue light emitting phosphor.

Abstract: A light emitting device 1 includes a light emitting diode, a phosphor layer containing phosphors that emit a visible light by being excited by a light emitted from the light emitting diode, and a reflector disposed to surround the light emitting diode. A portion of 50% or more in an area ratio of a reflecting surface of the reflector is formed as a scattering surface with a mean square inclination (?q) (0.1 mm) in a range of not less than 0.003 nor more than 0.03.

Abstract: A white light-emitting device 1 includes a semiconductor light-emitting element 2 emitting ultraviolet light or violet light, and a light-emitting unit 10 which includes three or more kinds of visible light-emitting phosphors 9 and emits white light when excited by the light from the semiconductor light-emitting element 2. The emission spectrum of the light-emitting unit 10 has peaks in a blue region of not less than 440 nm nor more than 460 nm, a green region of not less than 510 nm nor more than 530 nm, and a red region of not less than 620 nm nor more than 640 nm, and the three or more kinds of visible light-emitting phosphors 9 are bound together with a binder in advance.

Abstract: Disclosed is a white LED lamp using an ultraviolet light emitting LED, which can simultaneously realize a high level of color rendering and a high level of brightness. Included is an LED chip 2 having a luminescence wavelength between 360 nm and 440nm, and a light emitting part excitable upon exposure to light from the LED chip 2 to emit white light and comprising a phosphor, the phosphor including blue, green, and red light emitting phosphors bonded to each other. A phosphor selected from europium-activated halophosphate phosphors and europium-activated aluminate phosphors is used as the blue light emitting phosphor. A gold- and aluminum-activated zinc sulfide phosphor is used as the green light emitting phosphor. A phosphor selected from europium- and samarium-activated lanthanum oxysulfide phosphors and copper- and manganese-activated zinc sulfide phosphors is used as the red light emitting phosphor.

Abstract: A white light source includes: an insulating substrate; a light-emitting diode chip provided on the insulating substrate and that emits ultraviolet light with a wavelength of 330 nm to 410 nm; and a phosphor layer formed to cover the light-emitting diode chip, including a red emitting phosphor, a green emitting phosphor, and a blue emitting phosphor as a phosphor, and the phosphors are dispersed in a cured transparent resin, wherein when it is assumed that the shortest distance between a surface of the phosphor layer and a peripheral portion of the light-emitting diode chip is t(mm) and the mean free path defined by the following expression (1) is L(mm), the t and L satisfy 3.2?t/L. [Expression 1] L=1/(n×?)??(1) (n: number of phosphors per unit volume of the phosphor layer (pcs/mm3), and ?: average cross section area of a phosphor in the phosphor layer (mm2)).

Abstract: In one embodiment, an antibacterial material includes at least one microparticles selected from tungsten oxide microparticles and tungsten oxide complex microparticles. The microparticles, which are undergone a test to evaluate viable cell count by inoculating in a test piece, to which the microparticles are adhered in a range of 0.02 mg/cm2 or more and 40 mg/cm2 or less, at least one bacterium selected from among Staphylococcus aureus, Escherichia coli, Klebsiella pneumoniae, Pseudomonas aeruginosa, methicillin-resistant Staphylococcus aureus, and enterohemorrhagic Escherichia coli, and storing for 24 hours, have an antibacterial activity value R of 0.1 or more expressed by the following: R=log(B1/C1) where, B1 denotes an average value (number) of viable cell count after storing an untreated test piece for 24 hours, and C1 denotes an average value (number) of viable cell count after storing the test piece on which the microparticles are coated for 24 hours.

Abstract: A white light emitting device includes a blue light emitting diode chip that emits blue light in a specific wavelength band, a first resin layer that seals the blue light emitting diode chip and includes a cured product of silicone resin, and a second resin layer that covers the first resin layer and includes phosphor powder, which absorbs the blue light and emits light in a specific wavelength band, and a cured product of transparent resin. The phosphor powder has a composition represented by the following Formula (1): (Sr1-x-yBaxEuy)2SiO4 ??(1) (in Formula (1), x and y satisfy a condition that 0.05<x<0.5 and 0.05<y<0.3.) The first resin layer has thickness within a range of 200 ?m to 2000 ?m. The white light emitting device has high luminance for a long period.

Abstract: A semiconductor light emitting device includes a semiconductor light emitting element that emits light of a first wavelength, at least two kinds of phosphors that absorb the light of the first wavelength and then emit wavelength-converted light, sealing resin in which the at least two kinds of phosphors are dispersed and the semiconductor light emitting element is embedded, and binder resin. Combined bodies in which the at least two kinds of phosphors are combined by the binder resin are dispersed in the sealing resin.

Abstract: The solid scintillator according to the present invention is expressed by the following formula (1): [Formula 1] (M1-x-yGdxCey)3J5O12??(1) (wherein M is at least one element of La and Tb; J is at least one metal selected from the group consisting of Al, Ga, and In; and x and y are such that 0.5?x?1 and 0.000001?y?0.2). The transmittance of light having a wavelength of 550 nm measured at a thickness of 2 mm is equal to or greater than 40%. The solid scintillator according to the present invention can be manufactured at low cost, has a high light emitting power, and does not release Cd because Cd is not contained.

Abstract: A white LED lamp including: a conductive portion; a light emitting diode chip mounted on the conductive portion, for emitting a primary light having a peak wavelength of 360 nm to 420 nm; a transparent resin layer including a first hardened transparent resin, for sealing the light emitting diode chip; and a phosphor layer covering the transparent resin layer, the phosphor layer being formed by dispersing a phosphor powder into a second hardened transparent resin, and the phosphor powder receiving the primary light and radiating a secondary light having a wavelength longer than that of the primary light. An energy of the primary light contained in the radiated secondary light is 0.4 mW/lm or less. In the white LED lamp, a backlight, and an illumination device using the white LED lamp an amount of UV light to be contained in the released light and an amount of heat to be generated from the lamp are decreased to be small.

Abstract: An LED light emitting device is provided that has high color rendering properties and is excellent color uniformity and, at the same time, can realize even luminescence unattainable by conventional techniques. A phosphor having a composition represented by formula: (Sr2-X-Y-Z-?BaXMgYMnZEu?)SiO4 wherein x, y, z, and ? are respectively coefficients satisfying 0.1<x<1, 0<y<0.5, 0<z<0.1, y>z, and 0.01<?<0.2 is provided. The phosphor is used in combination with ultraviolet and blue light emitting diodes having a luminescence peak wavelength of 360 to 470 nm to form an LED light emitting device.

Abstract: A white light-emitting lamp (1) includes a semiconductor light-emitting device such as a LED chip (2) which has an emission wavelength of 360 nm or more and 440 nm or less, and a light-emitting part including a blue light-emitting phosphor, a green light-emitting phosphor and a red light-emitting phosphor, which emits white light when excited by light from the LED chip (2). At least one phosphor selected from Eu activated halophosphate phosphors and Eu activated aluminate phosphors is used as the blue light-emitting phosphor, Au and Al activated zinc sulfide phosphor is used as the green light-emitting phosphor, and at least one phosphor selected from Eu and Sm activated lanthanum sulfide phosphors and Cu and Mn activated zinc sulfide phosphors is used as the red light-emitting phosphor.

Abstract: A white light-emitting lamp (1) includes a light-emitting portion (9) which is excited by light emitted from a semiconductor light-emitting element (2) to emit white light. The light-emitting portion (9) contains a blue phosphor, a yellow phosphor and a red phosphor. The yellow phosphor is composed of a europium and manganese-activated alkaline earth silicate phosphor having a composition expressed by (Sr1-x-y-z-u, Bax, Mgy, Euz, Mnu)2SiO4 (0.1?x?0.35, 0.025?y?0.105, 0.025?z?0.25, 0.0005?u?0.02).

Abstract: In one embodiment, a visible light responsive photocatalyst powder has organic gas decomposition performance that responds nonlinearly to an amount of irradiated light under visible light in an illuminance range of not less than 200 lx nor more than 2500 lx. The visible light responsive photocatalyst powder has a gas decomposition rate of 20% or more, for example, when visible light having only a wavelength of not less than 380 nm and an illuminance of 2500 lx is irradiated, the gas decomposition rate (%) being set as a value calculated based on [formula: (A?B)/A×100], where A represents a gas concentration before light irradiation and B represents a gas concentration when not less than 15 minutes have elapsed from the light irradiation and, at the same time, the gas concentration is stable, the gas concentrations being measured while allowing an acetaldehyde gas having an initial concentration of 10 ppm to flow into a flow-type apparatus in which 0.2 g of a sample is placed.

Abstract: A white light emitting lamp 1 includes a phosphor layer 5 which emits white light by being excited by light emitted from a semiconductor light emitting element 2. A transparent resin layer 4 is interposed between the semiconductor light emitting element 2 and the phosphor layer 5. The phosphor layer 5 contains, as a green phosphor, a rare earth borate phosphor activated by trivalent cerium and terbium.

Abstract: A light emitting module 1 includes a substrate 2 having a metal pattern 4 and a plurality of white light emitting devices 3 linearly arranged on the substrate 2. The metal pattern 4 is formed on a portion of 60% or more of an area of the substrate 2. The white light emitting device 3 includes a light emitting diode as a semiconductor light emitting element 5. Light emitted from the semiconductor light emitting element 5 is converted into white light by a light emitting section containing phosphors, and is taken out. The light emitting module 1 emits white light.

Abstract: A visible-light-responsive photocatalyst powder includes a tungsten oxide powder. The tungsten oxide powder has color whose a* is ?5 or less, b* is ?5 or more, and L* is 50 or more when the color of the powder is expressed by an L*a*b* color system. Further, the tungsten oxide powder has a BET specific surface area in a range of 11 to 820 m2/g.

Abstract: A visible-light-responsive photocatalyst powder includes a tungsten oxide powder. When the tungsten oxide powder is measured by X-ray diffractometry, (1) among intensity ratios of a peak A (2?=22.8 to 23.4°), a peak B (2?=23.4 to 23.8°), a peak C (2?=24.0 to 24.25°), and a peak D (2?=24.25 to 24.5°), an A/D ratio and a B/D ratio each fall within a range of 0.5 to 2.0, and a C/D ratio falls within a range of 0.04 to 2.5, (2) an intensity ratio (E/F) of a peak E (2?=33.85 to 34.05°) to a peak F (2?=34.05 to 34.25°) falls within a range of 0.1 to 2.0, and (3) an intensity ratio (G/H) of a peak G (2?=49.1 to 49.7°) to a peak H (2?=49.7 to 50.3°) falls within a range of 0.04 to 2.0, and the tungsten oxide powder has a BET specific surface area in a range of 1.5 to 820 m2/g.

Abstract: A method for producing a tungsten trioxide powder for a photocatalyst according to the present invention is characterized by comprising a sublimation step for obtaining a tungsten trioxide powder by subliming a tungsten metal powder or a tungsten compound powder by using inductively coupled plasma process in an oxygen atmosphere, and a heat treatment step for heat-treating the tungsten trioxide powder obtained in the sublimation step at 300° C. to 1000° C. for 10 minutes to 2 hours in an oxidizing atmosphere. A tungsten trioxide powder which is obtained by the method for producing a tungsten trioxide powder for a photocatalyst according to the present invention has excellent photocatalytic performance under visible light.

Abstract: A light-emitting device includes a semiconductor light-emitting element arranged on a substrate having internal wiring, a reflector arranged around the semiconductor light-emitting element, and a light-emitting portion, filled in the reflector, having a phosphor which emits visible light when excited by light from the semiconductor light-emitting element. Electrical conduction to the light-emitting element is obtained via the internal wiring of the substrate and the reflector.