Abstract: According to one embodiment, a memory device includes a substrate; a structure including a plurality of conductive layers stacked on the substrate; and a pillar arranged inside the structure and including a semiconductor layer that extends in a direction perpendicular to a surface of the substrate. The semiconductor layer includes a first portion on a side of an upper portion of the structure, and a second portion between the first portion and the substrate. The first portion has a thickness larger than a thickness of the second portion.

Abstract: According to one embodiment, in a semiconductor storage device, during an erasing operation, a voltage supplied to at least one of a first wiring and a second wiring is set as a first voltage, and a voltage supplied to a first conductive layer is set as a second voltage. The erasing operation includes a first operation period in which the first voltage is increased from a first reference voltage to a first erase voltage and the second voltage is increased from a second reference voltage to a second erase voltage. In a second operation period of the erasing operation, the first voltage is maintained at the first erase voltage and the second voltage is decreased from the second erase voltage to the second reference voltage (or a first level voltage larger than the second reference voltage) after the first operation period.

Abstract: According to one embodiment, a semiconductor memory device includes a base layer, conductive layers, an insulation layer, a semiconductor layer and a charge storage layer. The conductive layers are stacked above the base layer in a first direction. The insulation layer is extending in the conductive layers in the first direction. The semiconductor layer is arranged between the insulation layer and the conductive layers. The charge storage layer is arranged between the semiconductor layer and the conductive layers. The insulation layer includes a first insulation layer arranged on a side of the base layer and containing polysilazane and a second insulation layer arranged on the first insulation layer on a side opposite from the base layer.

Abstract: According to one embodiment, a memory device includes a substrate; a structure including a plurality of conductive layers stacked on the substrate; and a pillar arranged inside the structure and including a semiconductor layer that extends in a direction perpendicular to a surface of the substrate. The semiconductor layer includes a first portion on a side of an upper portion of the structure, and a second portion between the first portion and the substrate. The first portion has a thickness larger than a thickness of the second portion.

Abstract: The present disclosure is related to providing a heat sink that can exhibit an excellent cooling property for even a heating element generating a high amount of heat and being mounted to a narrowed space. The heat sink includes a plurality of heat pipes to be thermally connected to a heating element, and a heat dissipation section thermally connected to the plurality of heat pipes, in which in the plurality of heat pipes, at least evaporation sections to be thermally connected to the heating element have flattened portions whose cross sectional shape in a direction orthogonal to a heat transfer direction of the plurality of heat pipes is flattened, and surfaces in the flattened portions in a thickness direction are arranged facing the heating element.

Abstract: The heat sink includes a radiation fin extending in a vertical direction from a heat-receiving unit, in which the radiation fin includes a notched portion in which a tip end side corner of the radiation fin is retracted inward in a main surface direction of the radiation fin with respect to a virtual rectangle or a virtual square formed of a side of the radiation fin on the heat-receiving unit side viewed from the main surface side, a first side extending from both ends of the side on the heat-receiving unit side in a direction orthogonal to the side on the heat-receiving unit side and a second side formed by extending a linear portion on the side of the radiation fin on a tip end side facing the side on the heat-receiving unit side to the first side.

Abstract: Example embodiments may provide a heat sink capable of cooling even when hot spots generate a large amount of heat that is unevenly distributed in some regions of a heating element package. The heat sink may include a plurality of heat pipes including one end portions thermally connected to a heating element package provided with a heating element in a package and other end portions thermally connected to a heat dissipation unit, in which the plurality of heat pipes includes at least a first heat pipe and a second heat pipe having greater heat transport capacity than heat transport capacity of the first heat pipe.

Abstract: According to one embodiment, a semiconductor memory device includes a base layer, conductive layers, an insulation layer, a semiconductor layer and a charge storage layer. The conductive layers are stacked above the base layer in a first direction. The insulation layer is extending in the conductive layers in the first direction. The semiconductor layer is arranged between the insulation layer and the conductive layers. The charge storage layer is arranged between the semiconductor layer and the conductive layers. The insulation layer includes a first insulation layer arranged on a side of the base layer and containing polysilazane and a second insulation layer arranged on the first insulation layer on a side opposite from the base layer.

Abstract: A heat sink with a centrifugal fan comprising: a cover of a prescribed shape including an air intake port and an air discharge port; a heat receiving block thermally connected to a heat generating part to be cooled; a bottom portion which is excellent in heat transferability, thermally connected to one face of said heat receiving block, and engaged to said cover to form a space portion; a heat dissipating fin portion comprising a plurality of fins, received within the space portion, thermally connected to said bottom portion, and having a prescribed shape including at least an air inflow portion; and a centrifugal fan, a rotating shaft of which is arranged in a vicinity of the air inflow portion of said heat dissipating fin portion, which intakes air from the air intake port, generates an air flow through spaces formed between adjacent fins of said heat dissipating fin portion, and generates another air flow along an inner wall of said cover toward said air discharge port.

Abstract: The present invention is to provide a heat sink withheat pipe, which is limited in height, not so noisy, compact and highly efficient in radiation, and can lower the temperature inside a casing as a whole more effectively even when it is used in an electronic appliance limited in height such as a personal computer, a game machine or the like.

Abstract: A heat sink with a centrifugal fan comprising: a cover of a prescribed shape including an air intake port and an air discharge port; a heat receiving block thermally connected to a heat generating part to be cooled; a bottom portion which is excellent in heat transferability, thermally connected to one face of said heat receiving block, and engaged to said cover to form a space portion; a heat dissipating fin portion comprising a plurality of fins, received within the space portion, thermally connected to said bottom portion, and having a prescribed shape including at least an air inflow portion; and a centrifugal fan, a rotating shaft of which is arranged in a vicinity of the air inflow portion of said heat dissipating fin portion, which intakes air from the air intake port, generates an air flow through spaces formed between adjacent fins of said heat dissipating fin portion, and generates another air flow along an inner wall of said cover toward said air discharge port.