Abstract: Each pixel electrode of a liquid crystal display device is divided into a plurality of subpixel electrodes, which are separated by a gap from each other, and a control capacitor electrode is provided opposite at least one of the subpixel electrodes through a first insulating film. The control capacitor electrode has a region extending the entire length of the gap so that a drive voltage can be applied to liquid crystal in the gap. The control capacitor electrode forms a control capacitor connected in series with a liquid crystal capacitor formed by the above-said at least one subpixel electrode between it and a common electrode corresponding thereto. An additional capacitor electrode, which is opposite the said at least one subpixel electrode through a second insulating film, is formed, by which is formed an additional capacitor equivalently in parallel to the liquid crystal capacitor.

Abstract: Each pixel electrode of a liquid crystal display device is divided into a plurality of subpixel electrodes, which are separated by a gap from each other, and a control capacitor electrode is provided opposite at least one of the subpixel electrodes through a first insulating film. The control capacitor electrode has a region extending the entire length of the gap so that a drive voltage can be applied to liquid crystal in the gap. The control capacitor electrode forms a control capacitor connected in series with a liquid crystal capacitor formed by the at least one subpixel electrode between it and a common electrode corresponding thereto. An additional capacitor electrode, which is opposite the at least one subpixel electrode through a second insulating film, is formed, by which is formed an additional capacitor equivalently in parallel to the liquid crystal capacitor.

Abstract: Each pixel electrode of a liquid crystal display device is divided into a plurality of subpixel electrodes, which are separated by a gap from each other, and a control capacitor electrode is provided opposite at least one of the subpixel electrodes through a first insulating film. The control capacitor electrode has a region extending the entire length of the gap so that a drive voltage can be applied to liquid crystal in the gap. The control capacitor electrode forms a control capacitor connected in series with a liquid crystal capacitor formed by the above-mentioned least one subpixel electrode between it and a common electrode corresponding thereto. An additional capacitor electrode, which is opposite the at least one subpixel electrode through a second insulating film, is formed, by which is formed an additional capacitor equivalently in parallel to the liquid crystal capacitor.

Abstract: On the inside surface of one of a pair of opposed transparent substrates forming an active liquid crystal substrate there are formed first and second insulating layers. Between the insulating layers there are provided transparent pixel electrodes arranged in a matrix form and source lines corresponding to respective columns of the pixel electrodes. A short-circuit metal layer is formed on the substrate, the opposite ends of the metal layer underlying a marginal portion of each pixel electrode and the source line adjacent thereto, respectively, but separated therefrom by the first insulating layer. In these overlapping regions welding metal pads are formed on the pixel electrode and the source line. Other welding metal pads of a ductile metal are formed on the second insulating layer right above the first-mentioned welding metal pads, respectively.

Abstract: In an active matrix structure for liquid crystal display elements which includes pixel electrodes arranged in a matrix form on a glass base plate, thin film transistors having their drains connected to the pixel electrodes, respectively, data lines each connected to sources of the thin film transistors of one column and gate lines connected to gates of the thin film transistors of one row, there are provided in the same plane a light blocking layer disposed opposite each of the thin film transistors across an insulating layer, a storage capacitance electrode disposed partly opposite each of the pixel electrodes across the insulating layer and storage capacitance lines for interconnecting the capacitance electrodes. The light blocking layers, the storage capacitance electrodes and the storage capacitance lines are formed of the same material and at the same time.

Abstract: In an active liquid crystal display element which operates in a normally white mode, there is formed a shorting metal layer which overlaps each pixel electrode and a source bus adjacent thereto. In those portions of the pixel electrode and the source bus overlapping the shorting metal layer there are formed weld metal layers. The pixel electrode of a defective pixel is connected to the corresponding source bus by welding the weld metal layers and the shorting metal layer through irradiation with laser beams to the above-mentioned overlapping portions. As a result of this, the defective pixel becomes a black defect when the liquid crystal display element operates.

Abstract: In an active matrix liquid crystal display device in which source and gate buses are arranged in a matrix form, thin film transistors are provided at intersections of the source and gate buses and display electrodes are driven by applying voltage thereto via the thin film transistors, source and gate bus repair conductive layers are provided which extend along the source buses in opposing relation thereto across an insulating layer. When any one of the source or gate buses is broken, the repair conductive layer and the broken bus can be connected at both side of the broken portion by laser welding.

Abstract: In an active matrix liquid crystal display device an internal short circuiting bus is formed across source and gate buses outside of a display region where thin film transistors and pixel electrodes are respectively arranged in a matrix form and inside of arrays of source and gate bus terminals. At intersections of the internal short circuiting bus with the source bus and the gate bus coupling elements of a high resistance material are provided for connecting the internal short circuiting bus to the source bus and the gate bus, respectively.

Abstract: A thin-film transistor comprises a source electrode and a drain electrode formed in a spaced-apart relation to each other on a substrate, a semiconductor layer formed over the source and drain electrodes, a gate insulating film formed on the semiconductor layer and a gate electrode on the gate insulating film. First and second ohmic contact layers are formed in the entirety of the surface regions of the semiconductor layer which are in contact with the source and drain electrodes.

Abstract: One end portion of each pixel electrode is extended under a gate insulating film underlying the neighboring gate bus and defines an additional capacitance region. The extended portion of the pixel electrode is divided into a plurality of comb-tooth-like electrodes, each defining divided additional capacitors. One of the comb-tooth-like electrodes is separated by a gap from the pixel electrode, and first and second electrodes for laser welding use are formed on the comb-tooth-like electrode and the pixel electrode facing each other across the gap. The first and second electrodes form series-connected first and second capacitances for laser welding use between them and a third electrode for laser welding use formed above them with a gate insulating film interposed therebetween.

Abstract: A source electrode and a drain electrode are formed apart on an insulating substrate, and a semiconductor layer is formed on the substrate between the source and drain electrodes. An insulating organic molecular film is formed all over the source and drain electrodes and the semiconductor layer. Ions are implanted into a selected top surface region of the insulating organic molecular film, corresponding to the semiconductor layer, by which chains of molecules in the surface region are cut to form free carbon, providing a conductive gate electrode.

Abstract: In projection device light from a point light source unit is reflected by a first reflecting mirror to produce parallel rays, which are applied to a color active matrix liquid crystal display unit. The parallel rays having passed through the liquid crystal display unit are converted by a second reflecting mirror into a bundle of rays of a desired solid angle for projection onto a screen.

Abstract: A source electrode and a drain electrode are formed apart on an insulating substrate, and a semiconductor layer is formed on the substrate between the source and drain electrodes. An insulating organic molecular film is formed all over the source and drain electrodes and the semiconductor layer. Ions are implanted into a selected top surface region of the insulating organic molecular film, corresponding to the semiconductor layer, by which chains of molecules in the surface region are cut to form free carbon, providing a conductive gate electrode.

Abstract: A liquid-crystal cell is formed with first and second transparent substrates opposing each other and a liquid crystal sealed therebetween. A plurality of display electrodes are formed in a matrix arrangement with rows and columns on the inner surface of said first transparent substrate. Gate bus lines are formed on the first transparent substrate along the respective rows of display electrodes. Source bus lines are formed on the first transparent substrate along the respective columns of display electrodes. Thin-film transistors are formed on the first transparent substrate at the intersections of a gate and source bus lines. The thin-film transistors each have a gate electrode connected to the associated gate bus line, a source electrode connected to the associated source bus line and the drain electrode connected to the corresponding display electrode. A common electrode is formed on the second transparent substrate such that it faces the display electrodes.

Abstract: A thin-film transistor comprises a source electrode and a drain electrode formed in a spaced-apart relation to each other on a substrate, a semiconductor layer formed over the source and drain electrodes, a gate insulating film formed on the semiconductor layer and a gate electrode on the gate insulating film. First and second ohmic contact layers are formed in the entirety of the surface regions of the semiconductor layer which are in contact with the source and drain electrodes.

Abstract: In a thin film transistor which has an active layer formed between source and drain electrodes, a gate insulating film formed in contact with the active layer, and a gate electrode formed in contact with the gate insulating film, the photoconductivity of the active layer is reduced by forming the active layer of amorphous silicon carbide (a-Si.sub.1-x C.sub.x) whose carbon content x is greater than 0.1.

Abstract: In an active color liquid crystal display element in which display electrodes are arranged in a matrix form within a liquid crystal cell, color filters of three primary colors are each disposed opposite one of the display electrodes, the color filters of the three colors being distributed substantially uniformly, and a thin film transistor connected to each display electrode is controlled, by switching, in accordance with an input color image signal to charge and discharge the display electrode for displaying a color image, the structures of the thin film transistors are selected corresponding to the color filters of the three primary colors so that substantially the same light transmission-voltage characteristic is provided for all the three color filter portions.

Abstract: Liquid crystal is sealed in between a pair of opposed first and second transparent substrates, picture element electrodes, gate buses, and source buses are formed on the first transparent substrate, and thin film transistors are each disposed at one of the intersections of the source and gate buses, thereby constituting an active matrix liquid crystal display element. On the first transparent substrate there are provided capacitive electrodes respectively opposite the source buses, with an insulating layer interposed therebetween, and the capacitive electrodes are connected to a common potential point.

Abstract: A liquid-crystal cell is formed with first and second transparent substrates opposing each other and a liquid crystal sealed therebetween. A plurality of display electrodes are formed in a matrix arrangement with rows and columns on the inner surface of said first transparent substrate. Gate bus lines are formed on the first transparent substrate along the respective rows of display electrodes. Source bus lines are formed on the first transparent substrate along the respective columns of display electrodes. Thin-film transistors are formed on the first transparent substrate at the intersections of the gate and source bus lines. The thin-film transistors each have a gate electrode connected to the associated gate bus line, a source electrode connected to the associated source bus line and the drain electrode connected to a corresponding display electrode. A common electrode is formed on the second transparent substrate such that it faces the display electrodes.

Abstract: A liquid crystal cell comprises a liquid crystal sealed between a pair of confronting transparent substrates. A multiplicity of semiconductor driver elements are substantially uniformly distributed over an inner surface of one of the substrates. The semiconductor driver elements have output electrodes connected respectively to matrix element electrodes formed on the inner surface of said one of the substrates. A driver circuit is formed as a semiconductor integrated circuit on an extension of the inner surface of said one of the substrates for selectively driving the semiconductor driver elements.