Abstract: A MIM nonlinear device is provided having a large nonlinearity coefficient that represents the sharpness of the voltage-current characteristic. A liquid-crystal display panel may be manufactured using the device to exhibit high image-quality. A method for manufacturing such a MIM nonlinear device is also provided. A MIM nonlinear device may include a first conductive film, an insulating film and a second conductive film laminated on a substrate. The insulating film may contain water at a content gradient descending in the direction of the film thickness from the surface facing the second conductive film. The hydrogen spectrum that is derived from the water and obtained by a secondary ion-mass spectrography (SIMS) elemental analysis with the radiation of cesium primary ions exhibits a peak near a surface of the insulating film facing the second conductive film. Additionally, the thermal desorption spectroscopy of the insulating film has a peak derived from water in the insulating film within a range of 220.

Abstract: In a manufacturing method of a MIM nonlinear device (50) having a Ta electrode layer (16), an anodic oxidation film (18) and a Cr electrode layer (20), tantalum oxidation film (14) is first formed on the transparent substrate (12). The Ta electrode layer (16) is formed on the tantalum oxidation film (14) and the anodic oxidation film (18) is formed on the Ta electrode layer (16). Then, heat treatment is performed to the substrate. The final temperature drop in the heat treatment process is carried out in the atmosphere that contains water vapor. After that, the Cr electrode layer (20) is formed to complete the MIM nonlinear device (50). By conducting the heat treatment in the atmosphere that contains water vapor, the nonlinear characteristics of the MIM device can be improved as well as the improvement of the resistance characteristic in the OFF state.