Abstract: Provided is a powder for ceramic shaping including oxide particles, wherein the oxide particles each contain a plurality of kinds of elements including at least Zr, Y, Si, and optionally Al, and contain at least silicon monoxide particles, and wherein when a content of the Zr is converted into a mass of ZrO2, a content of the Y is converted into a mass of Y2O3, a content of the Si is converted into a mass of SiO2, and a content of the Al is converted into a mass of Al2O3, the mass of ZrO2, the mass of Y2O3, and the mass of SiO2 with respect to a total amount of the mass of ZrO2, the mass of Y2O3, the mass of SiO2, and the mass of Al2O3 are represented by ? (mass %), ? (mass %), and ? (mass %), respectively, ?, ?, and ? satisfy the following expressions. 7 ? 7 . 6 ? 4 ? ? ? 93.06 4.42 ? ? ? 6.49 0.72 ? ? < ¯ 1 ? 7 .

Abstract: A semiconductor device includes first and second semiconductor layers, first to third electrodes, an insulating region and a conductive layer. The second semiconductor layer is located on the first semiconductor layer. The first electrode is located on the second semiconductor layer. The second electrode is located on the second semiconductor layer and arranged with the first electrode in a second direction. The third electrode is positioned between the first electrode and the second electrode. The insulating region is located on the second semiconductor layer. The insulating region is between the first electrode and the second electrode and next to the first electrode. The insulating region includes first and second insulating portions. The second insulating portion is positioned above the first insulating portion. The conductive layer is located between the first insulating portion and the second insulating portion. The conductive layer is electrically connected with the first electrode.

Abstract: A conductor layer is positioned between a gate electrode and a drain electrode. The conductor layer contacts a nitride semiconductor layer. The conductor layer is electrically connected with the drain electrode. The drain electrode includes a first part contacting the nitride semiconductor layer, and a second part positioned further toward the conductor layer side than the first part in a first direction. An insulating film includes a portion positioned between the conductor layer and the drain electrode. The second part is located on the portion of the insulating film.

Abstract: A semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a conductive part, an insulating part, and a third electrode. The second semiconductor layer is located on the first semiconductor layer. The first electrode is located on the second semiconductor layer. The first electrode includes an electrode part and an electrode extension part. The electrode part contacts the second semiconductor layer. The electrode extension part extends from an upper end portion of the electrode part. The conductive part is positioned between the first electrode and the second electrode. The conductive part contacts an upper surface of the second semiconductor layer and contacting the first electrode. The insulating part is located on the conductive part and is positioned between the conductive part and the electrode extension part.

Abstract: A semiconductor device includes a semiconductor layer that has a main surface, a trench gate structure that includes a trench formed in the main surface and having a first sidewall at one side, a second sidewall at the other side and a bottom wall in a cross-sectional view, an insulation layer formed on an inner wall of the trench, and a gate electrode embedded in the trench with the insulation layer between the trench and the gate electrode and having an upper end portion positioned at a bottom-wall side with respect to the main surface, a plurality of first-conductivity-type drift regions that are respectively formed in a region at the first sidewall side of the trench and in a region at the second sidewall side of the trench such as to face each other with the trench interposed therebetween in a surface layer portion of the main surface and that are positioned in a region at the main surface side with respect to the bottom wall, and a plurality of first-conductivity-type source/drain regions that are forme

Abstract: A semiconductor device according to an embodiment includes: a first nitride semiconductor layer having a first surface and a second surface; a first source electrode provided on the first surface; a first drain electrode provided on the first surface; a first gate electrode provided on the first surface between the first source electrode and the first drain electrode; a second nitride semiconductor layer having a third surface and a fourth surface, the third surface being provided on the second surface and facing the second surface, and the second nitride semiconductor layer having a smaller band gap than the first nitride semiconductor layer; and a first semiconductor device having a fifth surface provided on the fourth surface and facing the fourth surface with a size equal to or smaller than a size of the fourth surface, the first semiconductor device including a first semiconductor material having a smaller band gap than the second nitride semiconductor layer.

Abstract: A semiconductor device includes: a drain electrode including a plurality of drain finger parts; a source electrode including a plurality of source finger parts and a Kelvin source part electrically connected with the source finger parts; a sense electrode positioned between a drain finger part and the Kelvin source part, which are next to each other in a particular direction; and a gate electrode positioned between a drain finger part and a source finger part, which are next to each other in the particular direction, and between a drain finger part and the sense electrode, which are next to each other in the particular direction. The sense electrode and the Kelvin source part are electrically connected via a sense resistance due to a spacing between the sense electrode and the Kelvin source part in the particular direction.

Abstract: The present invention addresses the problem of providing: a method for producing brown adipocytes, osteoblasts, cartilage cells, neural cells, or cardiac cells from somatic cells without performing artificial gene transfer; brown adipocytes, osteoblasts, cartilage cells, neural cells, or cardiac cells; or a composition including a combination of chemical substances that can be used for the aforementioned production method. An example of the present invention is a method for producing brown adipocytes, osteoblasts, cartilage cells, neural cells, or cardiac cells including a step for culturing somatic cells in the presence or absence of an inhibitor or activator selected from the group consisting of an ALK5 inhibitor, an ALK6 inhibitor, an AMPK inhibitor, a cAMP activator, an ALK2 inhibitor, an ALK3 inhibitor, a GSK3 inhibitor, and an Erk inhibitor.

Abstract: The object of the present invention is to provide a cell mass or cell structure-embedding agent that can stably transport cell masses or cell structures in a case of transportation at a low temperature and after transportation, conveniently recover a cell mass or cell structure from the cell mass or cell structure-embedding agent, a cell mass or cell structure-containing composition, and a kit. According to the present invention, provided is a cell mass or cell structure-embedding agent including: polypeptide which is represented by Formula 1 and in which an area of the maximum molecular weight peak in molecular weight distribution measurement is 80% or more of the total area of all of the molecular weight peaks. A-[(Gly-X-Y)n]m-B??Formula (1): In the formula, X's and Y's each independently represent an amino acid, m is an integer of 2 to 10, n is an integer of 3 to 100, and A and B represent any amino acids or amino acid sequences.

Abstract: The present invention addresses the problem of providing: a method for producing brown adipocytes, osteoblasts, cartilage cells, neural cells, or cardiac cells from somatic cells without performing artificial gene transfer; brown adipocytes, osteoblasts, cartilage cells, neural cells, or cardiac cells; or a composition including a combination of chemical substances that can be used for the aforementioned production method. An example of the present invention is a method for producing brown adipocytes, osteoblasts, cartilage cells, neural cells, or cardiac cells including a step for culturing somatic cells in the presence or absence of an inhibitor or activator selected from the group consisting of an ALK5 inhibitor, an ALK6 inhibitor, an AMPK inhibitor, a cAMP activator, an ALK2 inhibitor, an ALK3 inhibitor, a GSK3 inhibitor, and an Erk inhibitor.

Abstract: Captured or input image data is converted into an image of a size of a specific number of pixels. Then, predetermined plural types of different effects are applied to image data obtained through the conversion. Several types of image data items with the applied effects are arranged and simultaneously displayed.

Abstract: An information processing apparatus that calculates a similarity between a plurality of pieces of content stored in a content storage unit, stores content information including information of the similarity obtained by the similarity calculation, generates a virtual three-dimensional display screen for content selection on the basis of stored content information, and allows selection of a piece of content from the virtual three-dimensional display screen.

Abstract: An information processing apparatus that includes a camera unit that captures image data; a display unit that displays the image data captured by the camera unit; a control unit that sets a photographing target region specified at a desired position on a screen of the display unit, and instructs the camera unit to start photographing when a photographing target is detected in the photographing target region in the image data captured by the camera unit; and a memory unit that stores an image captured by the camera unit after the instruction to start photographing.

Abstract: An information selecting apparatus includes a CPU and a controller capable of performing a direction input. An arbitrary item is selected from a plurality of items by a direction input by means of an analog joystick, for example. When it is determined that a predetermined series of direction input operations is performed, at least one item out of selection items is switched to another item.

Abstract: Captured or input image data is converted into an image of a size of a specific number of pixels. Then, predetermined plural types of different effects are applied to image data obtained through the conversion. Several types of image data items with the applied effects are arranged and simultaneously displayed.

Abstract: An information processing apparatus that includes a camera unit that captures image data; a display unit that displays the image data captured by the camera unit; a control unit that sets a photographing target region specified at a desired position on a screen of the display unit, and instructs the camera unit to start photographing when a photographing target is detected in the photographing target region in the image data captured by the camera unit; and a memory unit that stores an image captured by the camera unit after the instruction to start photographing.

Abstract: An information processing apparatus that calculates a similarity between a plurality of pieces of content stored in a content storage unit, stores content information including information of the similarity obtained by the similarity calculation, generates a virtual three-dimensional display screen for content selection on the basis of stored content information, and allows selection of a piece of content from the virtual three-dimensional display screen.

Abstract: The present invention provides a heat developable photosensitive material comprising at least a photosensitive silver halide, a non-photosensitive organic silver salt, a reducing agent for silver ions and binder on one surface of a support.

Abstract: An information selecting apparatus includes a computer, and makes a user select an arbitrary item from a plurality of items by a direction input of the user. Each of the items is assigned to a direction based on an input frequency, for example. In a case that a direction input is performed by means of a polygonal guide, the items are assigned to directions corresponding to the vertexes of the guide and directions corresponding to the parts except for the vertexes. For example, a high-frequency item is assigned to the direction corresponding to the vertex, or a range of the direction assigned to the high-frequency item is relatively made larger. Furthermore, when a direction corresponding to the vertex is input, items assigned to the parts except for the vertexes may temporarily be assigned to other vertexes.

Abstract: The present invention provides a photothermographic material having, on at least one side of a support, an image forming layer including at least a photosensitive silver halide, a non-photosensitive organic silver salt, a reducing agent, and a binder, and a non-photosensitive layer, wherein the non-photosensitive layer includes at least a polymer matting agent having a refractive index of from 1.51 to 1.56 and a glass transition temperature of 90° C. or higher. A photothermographic material which is excellent in film surface properties and photographic properties is provided.