Patents by Inventor Yasuhiro Yoshitaka
Yasuhiro Yoshitaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7604925Abstract: A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a light pattern on the substrate of the semiconductor device, developing the resist exposed by the light pattern to form a wafer pattern with the resist, and etching the substrate on which the wafer pattern with the resist is formed. In the step of exposing the light pattern is formed by illuminating a mask with excimer laser light having an annular shape.Type: GrantFiled: April 29, 2005Date of Patent: October 20, 2009Assignee: Renesas Technology CorporationInventors: Minori Noguchi, Yukio Kenbo, Yoshitada Oshida, Masataka Shiba, Yasuhiro Yoshitaka, Makoto Murayama
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Patent number: 7598020Abstract: A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a light pattern on the substrate of the semiconductor device through an object lens, developing the resist exposed by the light pattern to form a wafer pattern with the resist, and etching the substrate on which the wafer pattern with the resist is formed. In the step of exposing, the light pattern projected on the substrate is formed by excimer laser light which is emitted from an annular shaped light source and which is passed through a mask having a phase shifter.Type: GrantFiled: April 29, 2005Date of Patent: October 6, 2009Assignee: Renesas Technology CorporationInventors: Minori Noguchi, Yukio Kenbo, Yoshitada Oshida, Masataka Shiba, Yasuhiro Yoshitaka, Makoto Murayama
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Patent number: 7277155Abstract: A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a first light pattern on the substrate of the semiconductor device the first light pattern being formed by passing light through a first mask, and exposing the resist by projecting a second light pattern on the substrate, the second light pattern being formed by passing light through a second mask. In the step of exposing the resist by projecting the second light pattern, the second light pattern is formed by excimer laser light having an annular shape and passed through the second mask.Type: GrantFiled: April 29, 2005Date of Patent: October 2, 2007Assignee: Renesas Technology Corp.Inventors: Minori Noguchi, Yukio Kenbo, Yoshitada Oshida, Masataka Shiba, Yasuhiro Yoshitaka, Makoto Murayama
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Patent number: 7012671Abstract: An apparatus and method for projecting a pattern includes a light source for emitting a laser; an illuminating unit which illuminates a mask on which a pattern is formed with the laser emitted from the light source and formed in a particular shape; a holder which holds the mask; an optical lens unit which projects the pattern formed on the mask onto a surface of a substrate by the laser illuminated on the mask; and a table which mounts the substrate and moves in at least one direction.Type: GrantFiled: October 29, 2002Date of Patent: March 14, 2006Assignee: Renesas Technology Corp.Inventors: Minori Noguchi, Yukio Kenbo, Yoshitada Oshida, Masataka Shiba, Yasuhiro Yoshitaka, Makoto Murayama
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Publication number: 20050196713Abstract: A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a first light pattern on the substrate of the semiconductor device the first light pattern being formed by passing light through a first mask, and exposing the resist by projecting a second light pattern on the substrate, the second light pattern being formed by passing light through a second mask. In the step of exposing the resist by projecting the second light pattern, the second light pattern is formed by excimer laser light having an annular shape and passed through the second mask.Type: ApplicationFiled: April 29, 2005Publication date: September 8, 2005Inventors: Minori Noguchi, Yukio Kenbo, Yoshitada Oshida, Masataka Shiba, Yasuhiro Yoshitaka, Makoto Murayama
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Publication number: 20050196705Abstract: A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a light pattern on the substrate of the semiconductor device, developing the resist exposed by the light pattern to form a wafer pattern with the resist, and etching the substrate on which the wafer pattern with the resist is formed. In the step of exposing the light pattern is formed by illuminating a mask with excimer laser light having an annular shape.Type: ApplicationFiled: April 29, 2005Publication date: September 8, 2005Inventors: Minori Noguchi, Yukio Kenbo, Yoshitada Oshida, Masataka Shiba, Yasuhiro Yoshitaka, Makoto Murayama
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Publication number: 20050191583Abstract: A production method of a semiconductor device which includes the steps of exposing a resist coated on a substrate of a semiconductor device by projecting a light pattern on the substrate of the semiconductor device through an object lens, developing the resist exposed by the light pattern to form a wafer pattern with the resist, and etching the substrate on which the wafer pattern with the resist is formed. In the step of exposing, the light pattern projected on the substrate is formed by excimer laser light which is emitted from an annular shaped light source and which is passed through a mask having a phase shifter.Type: ApplicationFiled: April 29, 2005Publication date: September 1, 2005Inventors: Minori Noguchi, Yukio Kenbo, Yoshitada Oshida, Masataka Shiba, Yasuhiro Yoshitaka, Makoto Murayama
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Publication number: 20030073045Abstract: An apparatus and method for projecting a pattern includes a light source for emitting a laser; an illuminating unit which illuminates a mask on which a pattern is formed with the laser emitted from the light source and formed in a particular shape; a holder which holds the mask; an optical lens unit which projects the pattern formed on the mask onto a surface of a substrate by the laser illuminated on the mask; and a table which mounts the substrate and moves in at least one direction.Type: ApplicationFiled: October 29, 2002Publication date: April 17, 2003Inventors: Minori Noguchi, Yukio Kenbo, Yoshitada Oshida, Masataka Shiba, Yasuhiro Yoshitaka, Makoto Murayama
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Patent number: 6485891Abstract: A production method of a semiconductor device, includes the steps of emitting an excimer laser from a light source, illuminating a pattern on a mask with the excimer laser emitted from the light source and passed through a filter, exposing a resist on a substrate of the semiconductor with the excimer laser passed through the mask, and forming a pattern on the substrate in accordance with a portion of the resist exposed with the excimer laser.Type: GrantFiled: April 3, 2000Date of Patent: November 26, 2002Assignee: Hitachi, Ltd.Inventors: Minori Noguchi, Yukio Kenbo, Yoshitada Oshida, Masataka Shiba, Yasuhiro Yoshitaka, Makoto Murayama
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Patent number: 6335146Abstract: A production method of a semiconductor device, includes the steps of emitting an excimer laser from a light source, forming the excimer laser in a particular shape, illuminating a pattern on a mask for a phase shifter method with the particular shaped excimer laser, and exposing a resist on a wafer with the excimer laser which passed through the mask. The resist on the wafer is developed and the wafer is etched to form a pattern.Type: GrantFiled: April 3, 2000Date of Patent: January 1, 2002Assignee: Hitachi, Ltd.Inventors: Minori Noguchi, Yukio Kenbo, Yoshitada Oshida, Masataka Shiba, Yasuhiro Yoshitaka, Makoto Murayama
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Patent number: 6016187Abstract: An exposure apparatus and method wherein a mask is illuminated with light and light one of transmitted through and reflected from the illuminated mask is imaged onto a substrate. At least during imaging transmission of light one of transmitted and reflected from the illuminated mask is partially inhibited. More particularly, a spatial filter is utilized for inhibiting at least a portion of O-order diffraction light.Type: GrantFiled: January 6, 1998Date of Patent: January 18, 2000Assignee: Hitachi, Ltd.Inventors: Minori Noguchi, Yukio Kenbo, Yoshitada Oshida, Masataka Shiba, Yasuhiro Yoshitaka, Makoto Murayama
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Patent number: 5767949Abstract: An exposure apparatus and method wherein a mask is illuminated with light and light one of transmitted through and reflected from the illuminated mask is imaged onto a substrate. At least during imaging transmission of light one of transmitted and reflected from the illuminated mask is partially inhibited. More particularly, a spatial filter is utilized for inhibiting at least a portion of O-order diffraction light.Type: GrantFiled: October 8, 1996Date of Patent: June 16, 1998Assignee: Hitachi, Ltd.Inventors: Minori Noguchi, Yukio Kenbo, Yoshitada Oshida, Masataka Shiba, Yasuhiro Yoshitaka, Makoto Murayama
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Patent number: 5526094Abstract: An exposure apparatus and method wherein a mask is illuminated with light and light one of transmitted through and reflected from the illuminated mask is imaged onto a substrate. At least during imaging, transmission of light one of transmitted and reflected from the illuminated mask is partially inhibited. More particularly, a spatial filter is utilized for inhibiting at least a portion of O-order diffraction light.Type: GrantFiled: April 29, 1994Date of Patent: June 11, 1996Assignee: Hitachi, Ltd.Inventors: Minori Noguchi, Yukio Kenbo, Yoshitada Oshida, Masataka Shiba, Yasuhiro Yoshitaka, Makoto Murayama
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Patent number: 5329333Abstract: An exposure apparatus and method wherein a mask is illuminated with light and light one of transmitted through and reflected from the illuminated mask is imaged onto a substrate. At least during imaging, transmission of light one of transmitted and reflected from the illuminated mask is partially inhibited. More particularly, a spatial filter is utilized for inhibiting at least a portion of O-order diffraction light.Type: GrantFiled: March 5, 1992Date of Patent: July 12, 1994Assignee: Hitachi, Ltd.Inventors: Minori Noguchi, Yukio Kenbo, Yoshitada Oshida, Masataka Shiba, Yasuhiro Yoshitaka, Makoto Murayama