Abstract: A composition for forming a film for a semiconductor includes: a siloxane compound (A) having a specific structure that is linear and includes an amino group selected from a primary amino group or a secondary amino group, a silicon atom, and a non-polar group bonded to the silicon atom; a silane compound (B) having a specific structure that includes an amino group selected from a primary amino group or a secondary amino group, a silicon atom, and a non-polar group bonded to the silicon atom; and a cross-linking agent (C) having a specific structure that includes at least a —C(?O) OH group in a molecule thereof, and has a weight average molecular weight of from 200 to 2000. Applications of the composition are also disclosed.

Abstract: A composition for forming a film for a semiconductor includes: an aliphatic diamine (A) that includes at least one of a primary amino group or a secondary amino group, and a main chain including a carbon atom, in which, in the aliphatic diamine (A), the total number of primary amino groups and secondary amino groups is 2 or greater, the number of carbon atoms of the main chain is from 2 to 180; and a cross-linking agent (D) that includes three or more —C(?O)OX groups in a molecule thereof (X representing a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms), in which from one to six of the three or more —C(?O)OX groups are —C(?O)OH groups, and the cross-linking agent (D) has a weight average molecular weight of from 200 to 2000. Applications of the composition are also disclosed.

Abstract: Provided is a composition for forming a film for semiconductor devices, including: a compound (A) including a Si—O bond and a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom; a crosslinking agent (B) which includes three or more —C(?O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in the molecule, in which from one to six of three or more —C(?O)OX groups are —C(?O)OH groups, and which has a weight average molecular weight of from 200 to 600; and a polar solvent (D).

Abstract: A body, comprising stacked substrates, wherein: a first substrate, an adhesion layer comprising a reaction product of a compound (A), which has a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom and which has a defined weight average molecular weight, and a crosslinking agent (B), which has three or more —C(?O)OX groups in a molecule, in which from one to six of the three or more —C(?O)OX groups are —C(?O)OH groups and which has a weight average molecular weight of from 200 to 600, X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms, and a second substrate, are layered in this order, and the compound (A) comprises at least one selected from the group consisting of a defined aliphatic amine and a defined compound having a siloxane bond and an amino group.

Abstract: A composition includes: a compound (A), having an Si—O bond and a cationic functional group that includes at least one selected from the group consisting of a primary nitrogen atom and a secondary nitrogen atom; a compound (B), having at least three —C(?O)OX groups, wherein X is a hydrogen atom or an alkyl group with a carbon number of from 1 to 6, and from one to six of the —C(?O)OX groups is a —C(?O)OH group; and a compound (C), having a cyclic structure and at least one primary nitrogen atom that is directly bonded to the cyclic structure, the composition having a percentage of the primary and the secondary nitrogen atoms in the compound (A), with respect to a total amount of the primary and the secondary nitrogen atoms in the compound (A) and the primary nitrogen atom in the compound (C), of from 3 mol % to 95 mol %.

Abstract: This method for producing a semiconductor device comprises: a first step wherein a plurality of semiconductor chips are affixed onto a supporting substrate such that circuit surfaces of the semiconductor chips face the supporting substrate; a second step wherein a plurality of sealed layers are formed at intervals by applying the sealing resin onto the semiconductor chips by three-dimensional modeling method, each sealed layer containing one or more semiconductor chips embedded in a sealing resin; a third step wherein the sealed layers are cured or solidified; and a fourth step wherein sealed bodies are obtained by separating the cured or solidified sealed layers from the supporting substrate.

Abstract: Provided are a semiconductor element intermediate including: a substrate and a multilayer resist layer, in which the multilayer resist layer includes a metal-containing film, and in which the metal-containing film has a content of germanium element of 20 atm % or more, or a total content of tin element, indium element, and gallium element of 1 atm % or more, as measured by X-ray photoelectric spectroscopy, and an application of the semiconductor intermediate.

Abstract: A method of producing a substrate with a fine uneven pattern is a method of producing a substrate having a fine uneven pattern on a surface thereof, the method including a step (a) of preparing a laminate provided with a substrate and a first resin layer provided on the substrate and having a first fine uneven pattern formed on a surface thereof; and a step (b) of forming a second fine uneven pattern corresponding to the first fine uneven pattern on the surface of the substrate by etching the surface of the first fine uneven pattern using the first resin layer as a mask, in which the first resin layer is formed of a resin composition (P) including a fluorine-containing cyclic olefin polymer (A) or a cured product of the resin composition (P).

Abstract: A composition for forming a metal-containing film, the composition including: a compound (A) which is at least one selected from the group consisting of: a compound (a1) containing a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom, and a compound (a2) which is a compound other than the compound (a1) and which contains a nitrogen atom; and a compound (B) which is at least one selected from the group consisting of: a compound (b1) containing a carboxy group and at least one of a germanium atom, a tin atom, a selenium atom or a zirconium atom, and an ester of the compound (b1).

Abstract: A method of manufacturing a substrate layered body includes: a step of applying a bonding material to the surface of at least one of a first substrate or a second substrate; a step of curing the bonding material applied on the surface to form a bonding layer having a reduced modulus at 23° C. of 10 GPa or less; and a step of bonding the first substrate and the second substrate via the bonding layer formed.

Abstract: A method of producing a semiconductor element intermediate includes: a preparing step of preparing a substrate having a recessed part on a surface thereof; and a filling step of filling tin oxide into the recessed part by an atomic layer deposition method at a substrate temperature of 250° C. or higher, using a tin oxide precursor including a compound represented by the following Formula (1). In Formula (1), each of R1 to R4 independently represents an alkyl group having from 1 to 6 carbon atoms.

Abstract: Provided are a semiconductor element intermediate including: a substrate and a multilayer resist layer, in which the multilayer resist layer includes a metal-containing film, and in which the metal-containing film has a content of germanium element of 20 atm % or more, or a total content of tin element, indium element, and gallium element of 1 atm % or more, as measured by X-ray photoelectric spectroscopy, and an application of the semiconductor intermediate.

Abstract: The purpose of the present invention is to provide a semiconductor substrate manufacturing method, which prevents detachment of a semiconductor wafer being ground, and which prevents cracking or chipping in a semiconductor substrate obtained. In order to solve the problem, the semiconductor substrate manufacturing method comprises: a polyimide layer forming step of forming a polyimide layer on a support material; a wafer attaching step of affixing the support material and a semiconductor wafer to each other with the polyimide layer disposed therebetween; a wafer grinding step of grinding the semiconductor wafer; a support material peeling step of peeling the support material from the polyimide layer; and a polyimide layer peeling step of peeling the polyimide layer from the semiconductor wafer. The polyimide layer includes polyimide which includes a benzophenone skeleton and an aliphatic structure, wherein an amine equivalent weight is 4000 to 20000.

Abstract: A substrate intermediary body includes: a substrate having a hole in a thickness direction, and a conductor being disposed in the hole; and an adhesion layer formed on a wall surface of the hole. The adhesion layer contains a reaction product of a polymer (A) having a cationic functional group and having a weight-average molecular weight of from 2,000 to 1,000,000 and a polyvalent carboxylic acid compound (B) having two or more carboxyl groups per molecule or a derivative thereof.

Abstract: The purpose of the present invention is to provide a semiconductor substrate manufacturing method, which prevents detachment of a semiconductor wafer being ground, and which prevents cracking or chipping in a semiconductor substrate obtained. In order to solve the problem, the semiconductor substrate manufacturing method comprises: a polyimide layer forming step of forming a polyimide layer on a support material; a wafer attaching step of affixing the support material and a semiconductor wafer to each other with the polyimide layer disposed therebetween; a wafer grinding step of grinding the semiconductor wafer; a support material peeling step of peeling the support material from the polyimide layer; and a polyimide layer peeling step of peeling the polyimide layer from the semiconductor wafer. The polyimide layer includes polyimide which includes a benzophenone skeleton and an aliphatic structure, wherein an amine equivalent weight is 4000 to 20000.

Abstract: Provided is a composition for forming a film for semiconductor devices, including: a compound (A) including a Si—O bond and a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom; a crosslinking agent (B) which includes three or more —C(?O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in the molecule, in which from one to six of three or more —C(?O)OX groups are —C(?O)OH groups, and which has a weight average molecular weight of from 200 to 600; and a polar solvent (D).

Abstract: A composition for forming a film for semiconductor devices including: a compound (A) including a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom and having a weight average molecular weight of from 10,000 to 400,000; a crosslinking agent (B) which includes the three or more —C(?O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in the molecule, in which from one to six of three or more —C(?O)OX groups are —C(?O)OH groups, and which has a weight average molecular weight of from 200 to 600; and water (D), in which the compound (A) is an aliphatic amine.

Abstract: Provided is a composition for forming a film for semiconductor devices, including: a compound (A) including a Si—O bond and a cationic functional group containing at least one of a primary nitrogen atom or a secondary nitrogen atom; a crosslinking agent (B) which includes three or more —C(?O)OX groups (X is a hydrogen atom or an alkyl group having from 1 to 6 carbon atoms) in the molecule, in which from one to six of three or more —C(?O)OX groups are —C(?O)OH groups, and which has a weight average molecular weight of from 200 to 600; and a polar solvent (D).

Abstract: This method for producing a semiconductor device comprises: a first step wherein a plurality of semiconductor chips are affixed onto a supporting substrate such that circuit surfaces of the semiconductor chips face the supporting substrate; a second step wherein a plurality of sealed layers are formed at intervals by applying the sealing resin onto the semiconductor chips by three-dimensional modeling method, each sealed layer containing one or more semiconductor chips embedded in a sealing resin; a third step wherein the sealed layers are cured or solidified; and a fourth step wherein sealed bodies are obtained by separating the cured or solidified sealed layers from the supporting substrate.

Abstract: A method of producing a substrate with a fine uneven pattern is a method of producing a substrate having a fine uneven pattern on a surface thereof, the method including a step (a) of preparing a laminate provided with a substrate and a first resin layer provided on the substrate and having a first fine uneven pattern formed on a surface thereof; and a step (b) of forming a second fine uneven pattern corresponding to the first fine uneven pattern on the surface of the substrate by etching the surface of the first fine uneven pattern using the first resin layer as a mask, in which the first resin layer is formed of a resin composition (P) including a fluorine-containing cyclic olefin polymer (A) or a cured product of the resin composition (P).