Abstract: A light emitting device includes: a light transmissive member having an upper face, a lower face, and at least one lateral face; a light reflecting member that surrounds the at least one lateral face of the light transmissive member, the light reflecting member being made of a ceramic that contains a plurality of pores; a heat dissipation member disposed under the light reflecting member and the light transmissive member, the heat dissipation member having light transmissivity; and a light emitting element disposed apart from the heat dissipation member in such a manner as to transmit light from the light emitting element through the heat dissipation member and the light transmissive member.

Abstract: A light emitting device includes: a light transmissive member having an upper face, a lower face, and at least one lateral face; a light reflecting member that surrounds the at least one lateral face of the light transmissive member, the light reflecting member being made of a ceramic that contains a plurality of pores; a heat dissipation member disposed under the light reflecting member and the light transmissive member, the heat dissipation member having light transmissivity; and a light emitting element disposed apart from the heat dissipation member in such a manner as to transmit light from the light emitting element through the heat dissipation member and the light transmissive member.

Abstract: A light emitting device comprising: an optical component comprising: multiple light transmissive members, the light transmissive member having an upper face, a lower face, and at least one lateral face; and a light reflecting member that surrounds the at least one lateral face of the light transmissive member, wherein the light reflecting member is made of a ceramic that contains a plurality of pores, and wherein the plurality of pores are localized in a vicinity of the light transmissive member in a cross section that extends through the light transmissive member and the light reflecting member; multiple light emitting elements disposed on an upper surface of a substrate; and wherein the optical component is arranged on upper faces of the light emitting elements such that one light transmissive member is positioned on the upper face of one or two or more light emitting elements.

Abstract: A light emitting device comprising: an optical component comprising: multiple light transmissive members, the light transmissive member having an upper face, a lower face, and at least one lateral face; and a light reflecting member that surrounds the at least one lateral face of the light transmissive member, wherein the light reflecting member is made of a ceramic that contains a plurality of pores, and wherein the plurality of pores are localized in a vicinity of the light transmissive member in a cross section that extends through the light transmissive member and the light reflecting member; multiple light emitting elements disposed on an upper surface of a substrate; and wherein the optical component is arranged on upper faces of the light emitting elements such that one light transmissive member is positioned on the upper face of one or two or more light emitting elements.

Abstract: An optical component includes: a light transmissive member having an upper face, a lower face, and at least one lateral face; and a light reflecting member that surrounds the at least one lateral face of the light transmissive member, wherein the light reflecting member is made of a ceramic that contains a plurality of pores, and wherein the plurality of pores are localized in a vicinity of the light transmissive member in a cross section that extends through the light transmissive member and the light reflecting member.

Abstract: An optical component includes: a light transmissive member having an upper face, a lower face, and at least one lateral face; and a light reflecting member that surrounds the at least one lateral face of the light transmissive member, wherein the light reflecting member is made of a ceramic that contains a plurality of pores, and wherein the plurality of pores are localized in a vicinity of the light transmissive member in a cross section that extends through the light transmissive member and the light reflecting member.

Abstract: A semiconductor light emitting element includes an n-side semiconductor layer, an active layer, and a p-side semiconductor layer stacked in this order on a substrate. The active layer includes a multiple quantum well structure which includes a plurality of barrier layers and a plurality of well layers adjacent to the barrier layers. Among the barrier layers, a final barrier layer disposed closest to the p-side semiconductor layer and one or more barrier layers adjacent to the final barrier layer via the well layers respectively has a greater thickness than a thickness of a barrier layer on a side close to the n-side semiconductor layer.

Abstract: A semiconductor light emitting element includes an n-side semiconductor layer, an active layer, and a p-side semiconductor layer stacked in this order on a substrate. The active layer includes a multiple quantum well structure which includes a plurality of barrier layers and a plurality of well layers adjacent to the barrier layers. Among the barrier layers, a final barrier layer disposed closest to the p-side semiconductor layer and one or more barrier layers adjacent to the final barrier layer via the well layers respectively has a greater thickness than a thickness of a barrier layer on a side close to the n-side semiconductor layer.

Abstract: A nitride group semiconductor light emitting device includes a substrate, n-type and p-type semiconductor layers, and an active region. The n-type and p-type semiconductor layers are formed on or above the substrate. The active region is interposed between the n-type and p-type semiconductor layers. The active region includes barrier layers that are included in a multiquantum well structure, and an end barrier layer that has a thickness greater than the barrier layer, and is arranged closest to the p-type semiconductor layer. The average thickness of the last two barrier layers that are arranged adjacent to the end barrier layer is smaller than the average thickness of the other barrier layers among the thicknesses of the barrier layers that are included in the multiquantum well structure.

Abstract: A nitride group semiconductor light emitting device includes a substrate, n-type and p-type semiconductor layers, and an active region. The n-type and p-type semiconductor layers are formed on or above the substrate. The active region is interposed between the n-type and p-type semiconductor layers. The active region includes barrier layers that are included in a multiquantum well structure, and an end barrier layer that has a thickness greater than the barrier layer, and is arranged closest to the p-type semiconductor layer. The average thickness of the last two barrier layers that are arranged adjacent to the end barrier layer is smaller than the average thickness of the other barrier layers among the thicknesses of the barrier layers that are included in the multiquantum well structure.

Abstract: To provide a safe, nontoxic, and high-performance mixed refrigerant for hot water supply/heating system which is prepared by mixing dimethyl ether with carbon dioxide and which does not deplete the ozone layer, has a low global warming potential, and permits low-pressure operation. A refrigerant composition for hot water supply/heating comprising 1 to 10% by mole of dimethyl ether and 99 to 90% by mole of carbon dioxide on the basis of the total number of moles of dimethyl ether and carbon dioxide.

Abstract: [Problems] To provide a safe, nontoxic, and high-performance mixed refrigerant for hot water supply/heating system which is prepared by mixing dimethyl ether with carbon dioxide and which does not deplete the ozone layer, has a low global warming potential, and permits low-pressure operation. [Means for Solving Problems] A refrigerant composition for hot water supply/heating comprising 1 to 10% by mole of dimethyl ether and 99 to 90% by mole of carbon dioxide on the basis of the total number of moles of dimethyl ether and carbon dioxide.

Abstract: The present invention is directed to using a composition comprising carbon dioxide and dimethyl ether as a refrigerant. In particular, the refrigerant composition comprises 3-6% by mole dimethyl ether and 97-94% by mole of carbon dioxide on the basis of a total number of moles of dimethyl ether and carbon dioxide. Advantageously, the refrigerant composition does not cause ozonosphere depletion, has a low global warming potential, and is safe and nontoxic.

Abstract: Problems To provide a refrigerant that is ozone-friendly, exhibiting a very low global warning potential, and that is safe and nontoxic, ensuring high performance, by mixing dimethyl ether with carbon dioxide. Means for Solving Problems There is provided a refrigerant composition for a refrigerator, comprising 10-40% by mole of dimethyl ether and 90-60% by mole of carbon dioxide on the basis of a total number of moles of dimethyl ether and carbon dioxide.

Abstract: [Problems] To provide a refrigerant which is obtained by mixing a refrigerant, dimethyl ether, and carbon dioxide and which has such excellent performances that it does not cause ozonosphere depletion, has extremely low global warming potential, and is safe and nontoxic. [Means for solving problems] The refrigerant composition for refrigerating machines contains 1-10 mol % dimethyl ether and 99-90 mol % carbon dioxide.

Abstract: A semiconductor laser device having a far field pattern (FFP) with a Gaussian distribution that is less prone to ripples is provided. The semiconductor laser device comprises a semiconductor layer having a first conductivity type, an active layer, a semiconductor layer having a second conductivity type, a waveguide region formed by restricting current within a stripe-shaped region in the semiconductor layer of the second conductive type, and a resonance surface provided on an end face substantially perpendicular to the waveguide region. A plurality of recesses is formed at positions spaced from the waveguide region in the semiconductor layer of the second conductivity type in a region adjacent to the resonance surface.

Abstract: A semiconductor device with high reliability, low voltage, and high luminance is provided by preventing detachment of an electrode by way of obtaining good adhesion of the electrode, even in cases where a face-down mounting of a semiconductor laser is performed, and further, an insulating film and a protective film etc. are disposed in the area other than the area where the electrode is ohmically connected to the semiconductor layer. In a semiconductor device having an electrode electrically connected to the semiconductor layer, a dielectric film and an adhesion film comprising a degenerate semiconductor are stacked in sequence on a portion of a region between the semiconductor layer and the electrode, and the adhesion film is in contact with the electrode.

Abstract: [Problems] To provide a safe, nontoxic, and high-performance mixed refrigerant for hot water supply/heating system which is prepared by mixing dimethyl ether with carbon dioxide and which does not deplete the ozone layer, has a low global warming potential, and permits low-pressure operation. [Means for Solving Problems] A refrigerant composition for hot water supply/heating comprising 1 to 10% by mole of dimethyl ether and 99 to 90% by mole of carbon dioxide on the basis of the total number of moles of dimethyl ether and carbon dioxide.

Abstract: Disclosed is a safe, non-toxic refrigerant mixture for heating/hot water supply obtained by mixing dimethyl ether and carbon dioxide which operates at low pressures while exhibiting excellent performance. This refrigerant mixture does not deplete the ozone layer, and has a low global warming potential. Specifically disclosed is a composition containing 10-80% by mole of dimethyl ether and 90-20% by mole of carbon dioxide based on the total mole number of dimethyl ether and carbon dioxide.

Abstract: A semiconductor device with high reliability, low voltage, and high luminance is provided by preventing detachment of an electrode by way of obtaining good adhesion of the electrode, even in cases where a face-down mounting of a semiconductor laser is performed, and further, an insulating film and a protective film etc. are disposed in the area other than the area where the electrode is ohmically connected to the semiconductor layer. In a semiconductor device having an electrode electrically connected to the semiconductor layer, a dielectric film and an adhesion film comprising a degenerate semiconductor are stacked in sequence on a portion of a region between the semiconductor layer and the electrode, and the adhesion film is in contact with the electrode.