Abstract: An information processing apparatus includes a converting portion having a plurality of electrical conductors to be arranged in mutual separation and a medium arranged so as to mutually connect the plurality of electrical conductors, wherein the converting portion is the information processing apparatus to convert an input signal to an output signal. The medium includes the electrolyte and is configured to be capable of controlling an electrical conductivity of an electrically conductive path mutually electrically connecting the plurality of electrical conductors, and the medium is selected such that the electrical conductivity of the electrically conductive path changes over time with the input signal not being present.

Abstract: A variable resistance non-volatile memory element includes first and second electrodes and a variable resistance layer between the electrodes. The layer has a resistance value reversibly variable based on an electrical signal. The layer includes a first variable resistance layer that includes an oxygen deficient first metal oxide containing a first metal element and oxygen, and a second variable resistance layer that includes a composite oxide containing the first metal element, a second metal element different from the first metal element, and oxygen, and having a different degree of oxygen deficiency from the first metal oxide. The composite oxide has a lower degree of oxygen deficiency than the first metal oxide. At room temperature, the composite oxide has a smaller oxygen diffusion coefficient than a second metal oxide containing the first metal element and oxygen, and having the degree of oxygen deficiency equal to that of the composite oxide.

Abstract: An information processing device, including a resistive analog neuromorphic device element having a pair of electrodes and an oxide layer provided between the pair of electrodes, and a parallel circuit having a low resistance component and a capacitance component. The parallel circuit and the resistive analog neuromorphic device element are connected in series.

Abstract: A conductive bridge memory device includes a memory cell including a first metal layer; a second metal layer; a first insulator layer having a first surface facing the first metal layer and a second surface facing the second metal layer and being a surface opposite to the first surface, and having a through hole penetrating between the first surface and the second surface; and a liquid layer being formed of liquid containing a liquid electrolyte impregnated in the through hole.

Abstract: A variable resistance non-volatile memory element includes first and second electrodes and a variable resistance layer between the electrodes. The layer has a resistance value reversibly variable based on an electrical signal. The layer includes a first variable resistance layer that includes an oxygen deficient first metal oxide containing a first metal element and oxygen, and a second variable resistance layer that includes a composite oxide containing the first metal element, a second metal element different from the first metal element, and oxygen, and having a different degree of oxygen deficiency from the first metal oxide. The composite oxide has a lower degree of oxygen deficiency than the first metal oxide. At room temperature, the composite oxide has a smaller oxygen diffusion coefficient than a second metal oxide containing the first metal element and oxygen, and having the degree of oxygen deficiency equal to that of the composite oxide.

Abstract: A thermoelectric material is manufactured by a manufacturing process including annealing at an annealing temperature from 125° C. to 200° C. and for an annealing time from 5 minutes to 12 hours applied to a substance selected from the group consisting of conductive polymer, polystyrene sulfonate (PSS), tosylate (TOS), chloride and perchlorate and a substance as solvent selected from the group consisting of ethylene glycol, ethanol, dimethyl sulfoxide and isopropanol.

Abstract: A thermoelectric material is manufactured by a manufacturing process including annealing at an annealing temperature from 125° C. to 200° C. and for an annealing time from 5 minutes to 12 hours applied to a substance selected from the group consisting of conductive polymer, polystyrene sulfonate (PSS), tosylate (TOS), chloride and perchlorate and a substance as solvent selected from the group consisting of ethylene glycol, ethanol, dimethyl sulfoxide and isopropanol.

Abstract: A storage element includes a first electrode and a second electrode separated by a gap and a dielectric layer provided between the first electrode and the second electrode to fill the gap. A separation distance of the gap changes in response to application of a voltage to a space between the first electrode and the second electrode, such that a switching phenomenon is produced which switches a resistance state between the first electrode and the second electrode between a high resistance state in which it is difficult for tunnel current to flow and a low resistance state in which it is easy for tunnel current to flow.

Abstract: A thermoelectric material is manufactured by a manufacturing process including annealing at an annealing temperature from 125° C. to 200° C. and for an annealing time from 5 minutes to 12 hours applied to a substance selected from the group consisting of conductive polymer, polystyrene sulfonate (PSS), tosylate (TOS), chloride and perchlorate and a substance as solvent selected from the group consisting of ethylene glycol, ethanol, dimethyl sulfoxide and isopropanol.

Abstract: A storage element includes a first electrode and a second electrode separated by a gap and a dielectric layer provided between the first electrode and the second electrode to fill the gap. A separation distance of the gap changes in response to application of a voltage to a space between the first electrode and the second electrode, such that a switching phenomenon is produced which switches a resistance state between the first electrode and the second electrode between a high resistance state in which it is difficult for tunnel current to flow and a low resistance state in which it is easy for tunnel current to flow.

Abstract: There is provided a switching element which facilitates integration with higher density and lamination in a device, the switching element including: an insulating substrate; a first electrode provided on the insulating substrate; a second electrode provided above the first electrode; and a between-electrode gap section provided between the first electrode and the second electrode and including a nanometer-scale gap for causing a switching phenomenon of a resistor by applying a prescribed voltage between the first electrode and the second electrode.

Abstract: A switching element comprising: an insulative substrate; a first electrode and a second electrode provided on one surface of the insulative substrate; and an interelectrode gap which is provided between the first electrode and the second electrode, and which has a gap on the order of nanometers in which switching phenomenon of resistance occurs by applying predetermined voltage between the first electrode and the second electrode, wherein the one surface of the insulative substrate contains nitrogen.

Abstract: A switching element 100 includes an insulating substrate 10, a first electrode 20 provided on the insulating substrate 10, a second electrode 30 provided on the insulating substrate 10, and an interelectrode gap 40 provided between the first electrode 20 and the second electrode 30, a distance G between the first electrode 20 and the second electrode 30 being 0 nm<G?50 nm.

Abstract: A two-terminal resistance switching element, wherein two silicon films each doped with an impurity are arranged with a gap width in the order of nanometers. The gap width is in the range of from 0.1 nm to 100 nm. A semiconductor device can be obtained by providing the two-terminal resistance switching element in a memory, a storage device or other device.

Abstract: A nanogap switching element is equipped with an inter-electrode gap portion including a gap of a nanometer order between a first electrode and a second electrode. A switching phenomenon is caused in the inter-electrode gap portion by applying a voltage between the first and second electrodes. The nanogap switching element is shifted from its low resistance state to its high resistance state by receiving a voltage pulse application of a first voltage value, and shifted from its high resistance state to its low resistance state by receiving a voltage pulse application of a second voltage value lower than the first voltage value. When the nanogap switching element is shifted from the high resistance state to the low resistance state, a voltage pulse of an intermediate voltage value between the first and second voltage values is applied thereto before the voltage pulse application of the second voltage value thereto.

Abstract: There is provided a switching element which facilitates integration with higher density and lamination in a device, the switching element including: an insulating substrate; a first electrode provided on the insulating substrate; a second electrode provided above the first electrode; and a between-electrode gap section provided between the first electrode and the second electrode and including a nanometer-scale gap for causing a switching phenomenon of a resistor by applying a prescribed voltage between the first electrode and the second electrode.

Abstract: A non-volatile memory device 100 contains: an insulating substrate 10; a first electrode 20 provided on the insulating substrate 10; a second electrode 30 provided on the insulating substrate 10; and a gap 40 set between the first electrode 20 and the second electrode 30, in which a distance G between the first electrode 20 and the second electrode 30 is: 0 nm<G?50 nm.

Abstract: A switching element 100 includes an insulating substrate 10, a first electrode 20 provided on the insulating substrate 10, a second electrode 30 provided on the insulating substrate 10, and an interelectrode gap 40 provided between the first electrode 20 and the second electrode 30, a distance G between the first electrode 20 and the second electrode 30 being 0 nm<C?50 nm.

Abstract: A nanogap switching element is equipped with an inter-electrode gap portion including a gap of a nanometer order between a first electrode and a second electrode. A switching phenomenon is caused in the inter-electrode gap portion by applying a voltage between the first and second electrodes. The nanogap switching element is shifted from its low resistance state to its high resistance state by receiving a voltage pulse application of a first voltage value, and shifted from its high resistance state to its low resistance state by receiving a voltage pulse application of a second voltage value lower than the first voltage value. When the nanogap switching element is shifted from the high resistance state to the low resistance state, a voltage pulse of an intermediate voltage value between the first and second voltage values is applied thereto before the voltage pulse application of the second voltage value thereto.

Abstract: A two-terminal resistance switching element, wherein two silicon films each doped with an impurity are arranged with a gap width in the order of nanometers.