Abstract: According to embodiment, a light emitting element includes a light emitting layer having a first major surface and a second major surface, a first electrode provided on the first major surface side of the light emitting layer, and a second electrode provided on the second major surface side of the light emitting layer and having a basic outline. Furthermore, the light emitting element includes a current blocking portion provided between the first electrode and the light emitting layer or between the second electrode and the light emitting layer, and has an outline with a protrusion-depression pattern with respect to a virtual outline similar in shape to the basic outline of the second electrode.

Abstract: A semiconductor device includes: a semiconductor layer of a first conductivity type; a first semiconductor pillar region of the first conductivity type provided on a major surface of the semiconductor layer; a second semiconductor pillar region of a second conductivity type provided on the major surface of the semiconductor layer, the second semiconductor pillar region being adjacent to the first semiconductor pillar region; and a dielectric filled inside a trench, the trench being provided adjacent to the first semiconductor pillar region and away from the second semiconductor pillar region. The first semiconductor pillar region, the second semiconductor pillar region, and the trench are extending along a first direction. The first direction is substantially perpendicular to the depth direction of the trench. At least both ends of the first semiconductor pillar region in the first direction are provided more inside than both ends of the trench in the first direction.