Patents by Inventor Yasuhisa Sano
Yasuhisa Sano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10916455Abstract: A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.Type: GrantFiled: April 1, 2019Date of Patent: February 9, 2021Assignee: EBARA CORPORATIONInventors: Kazuto Yamauchi, Yasuhisa Sano, Hideyuki Hara, Junji Murata, Keita Yagi
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Publication number: 20190228994Abstract: A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.Type: ApplicationFiled: April 1, 2019Publication date: July 25, 2019Inventors: Kazuto YAMAUCHI, Yasuhisa SANO, Hideyuki HARA, Junji MURATA, Keita YAGI
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Patent number: 10297475Abstract: A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.Type: GrantFiled: April 10, 2014Date of Patent: May 21, 2019Assignee: Ebara CorporationInventors: Kazuto Yamauchi, Yasuhisa Sano, Hideyuki Hara, Junji Murata, Keita Yagi
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Patent number: 10163645Abstract: There are provided a processing method for a wide-bandgap semiconductor substrate and an apparatus therefor that use no abrasives or no abrasive grains, or no solution having a large environmental burden at all, can process a single crystal, which is SiC, GaN, AlGaN, or AlN, at a variety of processing speed, can obtain a surface of higher quality than the quality of a surface finished by CMP, and also have an excellent compatibility with a clean room. A catalytic substance having a function of promoting the direct hydrolysis of a work piece (5) or promoting the hydrolysis of an oxide film on the surface of the work piece is used as a processing reference plane (3). In the presence of water (1), the work piece is brought into contact with or extremely close to the processing reference plane at a predetermined pressure.Type: GrantFiled: March 11, 2015Date of Patent: December 25, 2018Assignees: OSAKA UNIVERSITY, TOHO ENGINEERING CO., LTD.Inventors: Kazuto Yamauchi, Ai Isohashi, Yasuhisa Sano
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Publication number: 20170069506Abstract: There are provided a processing method for a wide-bandgap semiconductor substrate and an apparatus therefor that use no abrasives or no abrasive grains, or no solution having a large environmental burden at all, can process a single crystal, which is SiC, GaN, AlGaN, or AlN, at a variety of processing speed, can obtain a surface of higher quality than the quality of a surface finished by CMP, and also have an excellent compatibility with a clean room. A catalytic substance having a function of promoting the direct hydrolysis of a work piece (5) or promoting the hydrolysis of an oxide film on the surface of the work piece is used as a processing reference plane (3). In the presence of water (1), the work piece is brought into contact with or extremely close to the processing reference plane at a predetermined pressure.Type: ApplicationFiled: March 11, 2015Publication date: March 9, 2017Applicants: OSAKA UNIVERSITY, TOHO Engineering Co., Ltd.Inventors: Kazuto YAMAUCHI, Ai ISOHASHI, Yasuhisa SANO
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Patent number: 9233449Abstract: A polishing method can process and flatten, in a practical processing time and with high surface accuracy, a surface of a substrate of a Ga element-containing compound semiconductor. The polishing method includes: bringing a Ga element-containing compound semiconductor substrate (16) into contact with a polishing tool (10) in the presence of a processing solution (14) comprising a neutral pH buffer solution containing Ga ions; irradiating a surface of the substrate with light or applying a bias potential to the substrate, or applying a bias potential to the substrate while irradiating the surface of the substrate with light, thereby forming Ga oxide (16a) on the surface of the substrate; and simultaneously moving the substrate and the polishing tool relative to each other to polish and remove the Ga oxide formed on the surface of the substrate.Type: GrantFiled: March 19, 2010Date of Patent: January 12, 2016Assignees: OSAKA UNIVERSITY, EBARA CORPORATIONInventors: Yasuhisa Sano, Kazuto Yamauchi, Junji Murata, Shun Sadakuni, Keita Yagi
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Publication number: 20150068680Abstract: A polishing method and a polishing apparatus finish a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that the surface can be flattened with high surface accuracy within a practical processing time. In the presence of water, such as weak acid water, water with air dissolved therein, or electrolytic ion water, the surface of the substrate made of a compound semiconductor containing either one of Ga, Al, and In and a surface of a polishing pad having an electrically conductive member in an area of the surface which is held in contact with the substrate) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate.Type: ApplicationFiled: November 12, 2014Publication date: March 12, 2015Inventors: Yasuhisa SANO, Kazuto YAMAUCHI, Junji MURATA, Takeshi OKAMOTO, Shun SADAKUNI, Keita YAGI
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Patent number: 8912095Abstract: A polishing method and a polishing apparatus finish a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that the surface can be flattened with high surface accuracy within a practical processing time. In the presence of water, such as weak acid water, water with air dissolved therein, or electrolytic ion water, the surface of the substrate made of a compound semiconductor containing either one of Ga, Al, and In and a surface of a polishing pad having an electrically conductive member in an area of the surface which is held in contact with the substrate) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate.Type: GrantFiled: December 14, 2010Date of Patent: December 16, 2014Assignees: Osaka University, Ebara CorporationInventors: Yasuhisa Sano, Kazuto Yamauchi, Junji Murata, Takeshi Okamoto, Shun Sadakuni, Keita Yagi
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Publication number: 20140231011Abstract: A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.Type: ApplicationFiled: April 10, 2014Publication date: August 21, 2014Applicant: Ebara CorporationInventors: Kazuto YAMAUCHI, Yasuhisa SANO, Hideyuki HARA, Junji MURATA, Keita YAGI
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Patent number: 8734661Abstract: A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.Type: GrantFiled: October 14, 2008Date of Patent: May 27, 2014Assignee: Ebara CorporationInventors: Kazuto Yamauchi, Yasuhisa Sano, Hideyuki Hara, Junji Murata, Keita Yagi
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Patent number: 8679286Abstract: A catalyst-aided chemical processing method is a novel processing method having a high processing efficiency and suited for processing in a space wavelength range of not less than several tens of ?m. The catalyst-aided chemical processing method comprises: immersing a workpiece in a processing solution in which a halogen-containing molecule is dissolved, said workpiece normally being insoluble in said processing solution; and bringing a platinum, gold or ceramic solid catalyst close to or into contact with a processing surface of the workpiece, thereby processing the workpiece through dissolution in the processing solution of a halogenide produced by chemical reaction between a halogen radical generated at the surface of the catalyst and a surface atom of the workpiece.Type: GrantFiled: April 18, 2012Date of Patent: March 25, 2014Assignee: Ebara CorporationInventors: Kazuto Yamauchi, Yasuhisa Sano
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Publication number: 20120244649Abstract: A polishing method and a polishing apparatus particularly suitable for finishing a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that a surface of a substrate of a compound semiconductor containing an element of Ga can be flattened with high surface accuracy within a practical processing time. In the presence of water (232) such as weak acid water, water with air dissolved therein, or electrolytic ion water, a surface of a substrate (142) made of a compound semiconductor containing either one of Ga, Al, and In and the surface of a polishing pad (242) having an electrically conductive member (264) in an area of the surface which is held in contact with the substrate (142) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate (142).Type: ApplicationFiled: December 14, 2010Publication date: September 27, 2012Inventors: Yasuhisa Sano, Kazuto Yamauchi, Junji Murata, Takeshi Okamoto, Shun Sadakuni, Keita Yagi
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Publication number: 20120241087Abstract: A catalyst-aided chemical processing method is a novel processing method having a high processing efficiency and suited for processing in a space wavelength range of not less than several tens of ?m. The catalyst-aided chemical processing method comprises: immersing a workpiece in a processing solution in which a halogen-containing molecule is dissolved, said workpiece normally being insoluble in said processing solution; and bringing a platinum, gold or ceramic solid catalyst close to or into contact with a processing surface of the workpiece, thereby processing the workpiece through dissolution in the processing solution of a halogenide produced by chemical reaction between a halogen radical generated at the surface of the catalyst and a surface atom of the workpiece.Type: ApplicationFiled: April 18, 2012Publication date: September 27, 2012Inventors: Kazuto YAMAUCHI, Yasuhisa Sano
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Patent number: 8119320Abstract: A heat-sensitive transfer image-receiving sheet, in which the heat-sensitive transfer image-receiving sheet is provided in a form that it is wound into a roll and all periphery of the roll is covered with a protective sheet, and in which the heat-sensitive transfer image-receiving sheet contains, on a support, at least one receptor layer containing a latex polymer, and at least one heat-insulating layer containing hollow polymer particles.Type: GrantFiled: March 27, 2008Date of Patent: February 21, 2012Assignee: Fujifilm CorporationInventors: Ryuji Shinohara, Yasuhisa Sano, Kazuma Takeno, Hiroshi Takehara
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Publication number: 20120001193Abstract: A polishing method can process and flatten, in a practical processing time and with high surface accuracy, a surface of a substrate of a Ga element-containing compound semiconductor. The polishing method includes: bringing a Ga element-containing compound semiconductor substrate (16) into contact with a polishing tool (10) in the presence of a processing solution (14) comprising a neutral pH buffer solution containing Ga ions; irradiating a surface of the substrate with light or applying a bias potential to the substrate, or applying a bias potential to the substrate while irradiating the surface of the substrate with light, thereby forming Ga oxide (16a) on the surface of the substrate; and simultaneously moving the substrate and the polishing tool relative to each other to polish and remove the Ga oxide formed on the surface of the substrate.Type: ApplicationFiled: March 19, 2010Publication date: January 5, 2012Inventors: Yasuhisa Sano, Kazuto Yamauchi, Junji Murata, Shun Sadakuni, Keita Yagi
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Publication number: 20100273381Abstract: A catalyst-aided chemical processing method is a novel processing method having a high processing efficiency and suited for processing in a space wavelength range of not less than several tens of ?m. The catalyst-aided chemical processing method comprises: immersing a workpiece in a processing solution in which a halogen-containing molecule is dissolved, said workpiece normally being insoluble in said processing solution; and bringing a platinum, gold or ceramic solid catalyst close to or into contact with a processing surface of the workpiece, thereby processing the workpiece through dissolution in the processing solution of a halogenide produced by chemical reaction between a halogen radical generated at the surface of the catalyst and a surface atom of the workpiece.Type: ApplicationFiled: July 8, 2010Publication date: October 28, 2010Inventors: Kazuto YAMAUCHI, Yasuhisa Sano
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Patent number: 7776228Abstract: A catalyst-aided chemical processing method is a novel processing method having a high processing efficiency and suited for processing in a space wavelength range of not less than several tens of ?m. The catalyst-aided chemical processing method comprises: immersing a workpiece in a processing solution in which a halogen-containing molecule is dissolved, said workpiece normally being insoluble in said processing solution; and bringing a platinum, gold or ceramic solid catalyst close to or into contact with a processing surface of the workpiece, thereby processing the workpiece through dissolution in the processing solution of a halogenide produced by chemical reaction between a halogen radical generated at the surface of the catalyst and a surface atom of the workpiece.Type: GrantFiled: April 11, 2006Date of Patent: August 17, 2010Assignee: Ebara CorporationInventors: Kazuto Yamauchi, Yasuhisa Sano
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Publication number: 20100147463Abstract: A catalyst-aided chemical processing method can process hard-to-process materials, especially SiC, GaN, etc. whose importance as electronic device materials is increasing these days, with high processing efficiency and high precision even for a space wavelength range of not less than several tens of ?m. The catalyst-aided chemical processing method comprises: putting a workpiece in a processing liquid in which halogen-containing molecules are dissolved; and moving the workpiece and a catalyst composed of molybdenum or a molybdenum compound relative to each other while keeping the catalyst in contact with or close proximity to a surface to be processed of the workpiece, thereby processing the surface of the workpiece.Type: ApplicationFiled: December 11, 2009Publication date: June 17, 2010Inventors: Kazuto YAMAUCHI, Yasuhisa SANO, Hideyuki HARA, Junji MURATA, Keita YAGI
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Patent number: 7651625Abstract: A catalyst-aided chemical processing method can process hard-to-process materials, especially SiC, GaN, etc. whose importance as electronic device materials is increasing these days, with high processing efficiency and high precision even for a space wavelength range of not less than several tens of ?m. The catalyst-aided chemical processing method comprises: putting a workpiece in a processing liquid in which halogen-containing molecules are dissolved; and moving the workpiece and a catalyst composed of molybdenum or a molybdenum compound relative to each other while keeping the catalyst in contact with or close proximity to a surface to be processed of the workpiece, thereby processing the surface of the workpiece.Type: GrantFiled: August 27, 2007Date of Patent: January 26, 2010Assignees: Osaka University, Ebara CorporationInventors: Kazuto Yamauchi, Yasuhisa Sano, Hideyuki Hara, Junji Murata, Keita Yagi
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Publication number: 20090095712Abstract: A flattening method, by utilizing the advantages of the CARE method and making up for the disadvantages, can perform removal processing of a surface of a workpiece at a sufficient processing rate and can provide a processed surface having enhanced flatness without leaving damage in the processed surface. A flattening method comprises at least two surface removal steps and at least two cleaning steps, the final surface removal step being a catalyst-referred etching step comprising immersing a workpiece in a processing solution containing at least one of hydrohalic acid, hydrogen peroxide water and ozone water, and bringing a surface of a catalyst platen into contact with or close proximity to a surface to be processed of the workpiece to process the surface, said catalyst platen having in a surface a catalyst selected from the group consisting of platinum, gold, a ceramic solid catalyst, a transition metal, glass, and an acidic or basic solid catalyst.Type: ApplicationFiled: October 14, 2008Publication date: April 16, 2009Inventors: Kazuto Yamauchi, Yasuhisa Sano, Hideyuki Hara, Junji Murata, Keita Yagi