Abstract: A radiographic imaging apparatus, includes: a planar-shaped flexible scintillator board that emits light at an intensity according to a radiation dose of received radiation; a flexible photoelectric conversion panel that includes a plurality of photodetection elements formed so as to be distributed two-dimensionally on a surface of a flexible support board, and is arranged such that an element-formed surface on which the photodetection elements are formed faces the scintillator board, the photodetection elements generating charges according to an intensity of the received radiation; and a moisture barrier layer that is formed of a material having characteristics of preventing moisture from passing therethrough, and covers a surface of the scintillator board opposite to a surface facing the photodetection elements, a side surface of the scintillator board, and a surface of the photoelectric conversion panel opposite to the element-formed surface.

Abstract: A radiographic imaging apparatus, includes: a planar-shaped flexible scintillator board that emits light at an intensity according to a radiation dose of received radiation; a flexible photoelectric conversion panel that includes a plurality of photodetection elements formed so as to be distributed two-dimensionally on a surface of a flexible support board, and is arranged such that an element-formed surface on which the photodetection elements are formed faces the scintillator board, the photodetection elements generating charges according to an intensity of the received radiation; and a moisture barrier layer that is formed of a material having characteristics of preventing moisture from passing therethrough, and covers a surface of the scintillator board opposite to a surface facing the photodetection elements, a side surface of the scintillator board, and a surface of the photoelectric conversion panel opposite to the element-formed surface.

Abstract: A radiographic image capturing device includes: a sensor substrate having one surface on which a plurality of light-receiving elements are two-dimensionally arranged; and a scintillator substrate that is arranged on the side of the light-receiving elements of the sensor substrate, wherein a region having no interface between insulating layers that differ in refractive index is formed between the scintillator substrate and incident planes of the light-receiving elements of the sensor substrate.

Abstract: A radiographic image capturing device includes: a sensor substrate having one surface on which a plurality of light-receiving elements are two-dimensionally arranged; and a scintillator substrate that is arranged on the side of the light-receiving elements of the sensor substrate, wherein a region having no interface between insulating layers that differ in refractive index is formed between the scintillator substrate and incident planes of the light-receiving elements of the sensor substrate.

Abstract: A this film transistor is provided. The thin film transistor includes a semiconductor layer including a source region, a drain region, and a channel region, wherein the channel region is provided between the source region and the drain region; and a gate electrode overlapping with the channel region, wherein the channel region includes at least a portion of a channel width that is configured to at least one of continuously decrease and continuously increase in a lengthwise direction.

Abstract: An image pickup device that includes: a pixel section including a plurality of pixels each configured to generate a signal charge based on radiation; a first field-effect transistor provided in the pixel section; and a second field-effect transistor provided in a peripheral circuit section of the pixel section. The first transistor has a threshold voltage and the second transistor has a threshold voltage that are different from each other.

Abstract: A this film transistor is provided. The thin film transistor includes a semiconductor layer including a source region, a drain region, and a channel region, wherein the channel region is provided between the source region and the drain region; and a gate electrode overlapping with the channel region, wherein the channel region includes at least a portion of a channel width that is configured to at least one of continuously decrease and continuously increase in a lengthwise direction.