Abstract: Such a film forming method is provided that can prevent peeling of surface films including a resist film from a substrate during immersion exposure. The film forming method includes the steps of forming surface films including a resist film and a protective film covering the resist film over a surface of a wafer, and forming an edge cap film by supplying an edge cap film material to at least a boundary portion including a periphery of the wafer and peripheries of the surface films such as the protective film.

Abstract: A substrate transfer method for transferring target substrates proceeds in a substrate processing system for performing processes including a photolithography sequence on the target substrates. The system includes a first automated substrate transfer line configured to transfer the target substrates among a plurality of process sections for respectively performing processes on the target substrates, and a second automated substrate transfer line of a cyclical type dedicated to a plurality of process apparatuses of a photolithography process section, which are configured to perform a series of processes in the photolithography sequence, the second automated substrate transfer line being located relative to the first automated substrate transfer line so as for the target substrates to be transferred therebetween.

Abstract: A substrate transfer method for transferring target substrates proceeds in a substrate processing system for performing processes including a photolithography sequence on the target substrates. The system includes a first automated substrate transfer line configured to transfer the target substrates among a plurality of process sections for respectively performing processes on the target substrates, and a second automated substrate transfer line of a cyclical type dedicated to a plurality of process apparatuses of a photolithography process section, which are configured to perform a series of processes in the photolithography sequence, the second automated substrate transfer line being located relative to the first automated substrate transfer line so as for the target substrates to be transferred therebetween.

Abstract: A substrate processing system (100) includes a first automated substrate transfer line or main transfer line (20) configured to transfer wafers (W) over the entire system and to transfer wafers to and from respective process sections, and a second automated substrate transfer line or auxiliary transfer line (30) configured to transfer wafers (W) inside a photolithography process section (1a). The auxiliary transfer line (30) is disposed as a transfer mechanism independent of the main transfer line (20). An OHT (31) is configured to travel around on the auxiliary transfer line (30) having a loop shape, so as to transfer wafers (W) to and from and among the respective process apparatuses in the photolithography process section (1a).

Abstract: A pattern forming method includes forming a resist film or sequentially forming a resist film and a protection film in this order on a surface of a substrate; then, performing immersion light exposure that includes immersing the resist film or the resist film and the protection film formed on the substrate in a liquid during light exposure, thereby forming a predetermined light exposure pattern on the resist film; and performing a development process of the light exposure pattern by use of a development liquid, thereby forming a predetermined resist pattern. After the immersion light exposure and before the development process, the method further includes performing a hydrophilic process of turning a surface of the resist film or the protection film serving as a substrate surface into a hydrophilic state to allow the substrate surface to be wetted with the development liquid overall.

Abstract: In the present invention, patterning for the first time is performed on a film to be worked above the front surface of a substrate, and the actual dimension of the pattern formed by the patterning for the first time is measured. Based on the dimension measurement result of the patterning or the first time, the condition of patterning for the second time is then set. In this event, the condition of the patterning for the second time is set so that a difference between the dimension of the patterning for the first time and its target dimension is equal to a difference between the dimension of the patterning for the second time and its target dimension. Thereafter, the patterning for the second time is performed under the set patterning condition.

Abstract: A substrate on which a resist film has been formed is transferred to an aligner and subjected to exposure processing. The substrate is then subjected to post-exposure baking in a second processing system. The substrate is then transferred again to the aligner and subjected to exposure processing. The substrate for which exposure processing for the second time has been finished is transferred to a first processing system and again subjected to post-exposure baking. The time periods from the ends of the exposure processing to the starts of the post-exposure baking for the first time and the second time are controlled to be equal. In pattern forming processing in which exposure processing is performed a plurality of times between the resist film forming processing and the developing treatment, a pattern with a desired dimension can be finally formed.

Abstract: A circulation system for a high refractive index liquid includes a first collecting section configured to collect a high refractive index liquid used in an immersion light exposure section; a first supply section configured to supply the high refractive index liquid collected in the first collecting section to a cleaning section as a cleaning liquid; a second collecting section configured to collect the high refractive index liquid used in the cleaning section; and a second supply section configured to supply the high refractive index liquid collected in the second collecting section to the immersion light exposure section, wherein the high refractive index liquid is circulated between the immersion light exposure section and the cleaning section.

Abstract: An edge exposure apparatus performing an exposure process on an edge portion of a wafer having a coating film (resist film) formed thereon includes position detection means for detecting positional data of an outer edge of a wafer held by a spin chuck, an exposure portion for performing an exposure process on the edge portion of the wafer, a development nozzle supplying a developer to the exposed region, and alignment means for horizontally moving the spin chuck. An exposure process is performed by the exposure portion on the edge portion of the wafer held by the spin chuck while the alignment means is controlled, based on the positional data of the outer edge of the wafer which is detected by the position detection means, such that the positional relation between the outer edge of the wafer and the exposure portion is kept constant.

Abstract: In the present invention, patterning for the first time is performed on a film to be worked above the front surface of a substrate, and the actual dimension of the pattern formed by the patterning for the first time is measured. Based on the dimension measurement result of the patterning or the first time, the condition of patterning for the second time is then set. In this event, the condition of the patterning for the second time is set so that a difference between the dimension of the patterning for the first time and its target dimension is equal to a difference between the dimension of the patterning for the second time and its target dimension. Thereafter, the patterning for the second time is performed under the set patterning condition.

Abstract: In the present invention, a substrate on which a resist film has been formed is transferred to an aligner and subjected to exposure processing. The substrate is then subjected to post-exposure baking in a second processing system. The substrate is then transferred again to the aligner and subjected to exposure processing. The substrate for which exposure processing for the second time has been finished is transferred to a first processing system and again subjected to post-exposure baking. The time periods from the ends of the exposure processing to the starts of the post-exposure baking for the first time and the second time are controlled to be equal. According to the present invention, in pattern forming processing in which exposure processing is performed a plurality of times between the resist film forming processing and the developing treatment, a pattern with a desired dimension can be finally formed.

Abstract: A substrate processing system (100) includes a first automated substrate transfer line or main transfer line (20) configured to transfer wafers (W) over the entire system and to transfer wafers to and from respective process sections, and a second automated substrate transfer line or auxiliary transfer line (30) configured to transfer wafers (W) inside a photolithography process section (1a). The auxiliary transfer line (30) is disposed as a transfer mechanism independent of the main transfer line (20). An OHT (31) is configured to travel around on the auxiliary transfer line (30) having a loop shape, so as to transfer wafers (W) to and from and among the respective process apparatuses in the photolithography process section (1a).

Abstract: Such a film forming method is provided that can prevent peeling of surface films including a resist film from a substrate during immersion exposure. The film forming method includes the steps of forming surface films including a resist film and a protective film covering the resist film over a surface of a wafer, and forming an edge cap film by supplying an edge cap film material to at least a boundary portion including a periphery of the wafer and peripheries of the surface films such as the protective film.

Abstract: An edge exposure apparatus performing an exposure process on an edge portion of a wafer having a coating film (resist film) formed thereon includes position detection means for detecting positional data of an outer edge of a wafer held by a spin chuck, an exposure portion for performing an exposure process on the edge portion of the wafer, a development nozzle supplying a developer to the exposed region, and alignment means for horizontally moving the spin chuck. An exposure process is performed by the exposure portion on the edge portion of the wafer held by the spin chuck while the alignment means is controlled, based on the positional data of the outer edge of the wafer which is detected by the position detection means, such that the positional relation between the outer edge of the wafer and the exposure portion is kept constant.

Abstract: A pattern forming method includes forming a resist film or sequentially forming a resist film and a protection film in this order on a surface of a substrate; then, performing immersion light exposure that includes immersing the resist film or the resist film and the protection film formed on the substrate in a liquid during light exposure, thereby forming a predetermined light exposure pattern on the resist film; and performing a development process of the light exposure pattern by use of a development liquid, thereby forming a predetermined resist pattern. After the immersion light exposure and before the development process, the method further includes performing a hydrophilic process of turning a surface of the resist film or the protection film serving as a substrate surface into a hydrophilic state to allow the substrate surface to be wetted with the development liquid overall.

Abstract: A circulation system for a high refractive index liquid includes a first collecting section configured to collect a high refractive index liquid used in an immersion light exposure section; a first supply section configured to supply the high refractive index liquid collected in the first collecting section to a cleaning section as a cleaning liquid; a second collecting section configured to collect the high refractive index liquid used in the cleaning section; and a second supply section configured to supply the high refractive index liquid collected in the second collecting section to the immersion light exposure section, wherein the high refractive index liquid is circulated between the immersion light exposure section and the cleaning section.