Patents by Inventor Yasuhito Takahashi
Yasuhito Takahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140374173Abstract: The coil that is installed on a lever is obtained from a flat coil, which is wound flat so as to generate upper and lower winding regions that are parallel to the direction that the lever extends along a vertical surface that is parallel to the direction that the lever extends. The magnetic circuit is provided with multiple plate-shaped permanent magnets that face the upper and lower winding regions of the flat coil and are magnetized in a direction that is orthogonal to the vertical surface, and yoke members that induce lines of magnetic force of the permanent magnets so that a magnetic flux of an orientation that is orthogonal to the vertical surface is generated.Type: ApplicationFiled: February 26, 2013Publication date: December 25, 2014Applicant: SHINKO DENSHI CO., LTD.Inventors: Kazufumi Naito, Kouzou Terunuma, Kazushi Fujihara, Masaru Ikeshima, Shinichirou Ishida, Yoshiyuki Ishihara, Koji Fujiwara, Yasuhito Takahashi, Hisato Sumitomo
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Patent number: 8800142Abstract: A semiconductor chip mounting layer of a package substrate unit includes an insulation layer, a conductive seed metal layer formed on the top surface of the insulation layer, conductive pads formed on the top surface of the conductive seed metal layer, metal posts formed substantially in the central portion on the top surface of the conductive pads, and a solder resist layer that is formed to surround the conductive pads and the metal posts.Type: GrantFiled: February 8, 2011Date of Patent: August 12, 2014Assignee: Fujitsu LimitedInventors: Hnin Nway San Nang, Kazuya Arai, Kei Fukui, Shinpei Ikegami, Yasuhito Takahashi, Hideaki Yoshimura, Hitoshi Suzuki
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Patent number: 8231726Abstract: An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element having an excellent light extraction property by selecting a specific substrate dopant and controlling the concentration thereof. The semiconductor light-emitting element comprises a substrate composed of a group III nitride semiconductor comprising germanium (Ge) as a dopant, an n-type semiconductor layer composed of a group III nitride semiconductor formed on the substrate, an active layer composed of a group III nitride semiconductor formed on the n-type semiconductor layer, and a p-type semiconductor layer composed of a group III nitride semiconductor formed on the active layer in which the substrate has a germanium (Ge) concentration of 2×1017 to 2×1019 cm?3.Type: GrantFiled: January 19, 2007Date of Patent: July 31, 2012Assignee: Panasonic CorporationInventors: Hisashi Minemoto, Yasuo Kitaoka, Yasutoshi Kawaguchi, Yasuhito Takahashi, Yoshiaki Hasegawa
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Publication number: 20120067635Abstract: A semiconductor chip mounting layer of a package substrate unit includes an insulation layer, a conductive seed metal layer formed on the top surface of the insulation layer, conductive pads formed on the top surface of the conductive seed metal layer, metal posts formed substantially in the central portion on the top surface of the conductive pads, and a solder resist layer that is formed to surround the conductive pads and the metal posts.Type: ApplicationFiled: February 8, 2011Publication date: March 22, 2012Applicant: Fujitsu LimitedInventors: Hnin Nway San Nang, Kazuya Arai, Kei Fukui, Shinpei Ikegami, Yasuhito Takahashi, Hideaki Yoshimura, Hitoshi Suzuki
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Patent number: 7855823Abstract: The present invention provides an acoustooptic device usable even with light in the ultraviolet region, free from laser damage and optical damage, and excellent in acoustooptic performance and an optical imaging apparatus using the same. The acoustooptic device according to the present invention includes a high-frequency signal input part (65), a transducer part (64), and an acoustooptic medium (6). A high-frequency signal input from the high-frequency signal input part (65) is converted into a mechanical vibration by the transducer part (64), and an optical characteristic of the acoustooptic medium (6) varies depending on the mechanical vibration. The acoustooptic medium is formed of a Group III nitride crystal. The optical imaging apparatus according to the present invention includes a light source, an acoustooptic device, a driving circuit, and an image plane.Type: GrantFiled: June 29, 2005Date of Patent: December 21, 2010Assignee: Panasonic CorporationInventors: Hisashi Minemoto, Yasuo Kitaoka, Isao Kidoguchi, Takayuki Negami, Yasuhito Takahashi, Toshimi Nishiyama, Kimihiko Shibuya
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Publication number: 20100230713Abstract: An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element having an excellent light extraction property by selecting a specific substrate dopant and controlling the concentration thereof. The semiconductor light-emitting element comprises a substrate composed of a group III nitride semiconductor comprising germanium (Ge) as a dopant, an n-type semiconductor layer composed of a group III nitride semiconductor formed on the substrate, an active layer composed of a group III nitride semiconductor formed on the n-type semiconductor layer, and a p-type semiconductor layer composed of a group III nitride semiconductor formed on the active layer in which the substrate has a germanium (Ge) concentration of 2×1017 to 2×1019 cm?3.Type: ApplicationFiled: January 19, 2007Publication date: September 16, 2010Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Hisashi Minemoto, Yasuo Kitaoka, Yasutoshi Kawaguchi, Yasuhito Takahashi, Yoshiaki Hasegawa
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Patent number: 7794539Abstract: A method for producing Group-III-element nitride crystals by which an improved growth rate is obtained and large high-quality crystals can be grown in a short time, a producing apparatus used therein, and a semiconductor element obtained using the method and the apparatus are provided. The method is a method for producing Group-III-element nitride crystals that includes a crystal growth process of subjecting a material solution containing a Group III element, nitrogen, and at least one of alkali metal and alkaline-earth metal to pressurizing and heating under an atmosphere of a nitrogen-containing gas so that the nitrogen and the Group III element in the material solution react with each other to grow crystals.Type: GrantFiled: March 31, 2005Date of Patent: September 14, 2010Assignees: Panasonic CorporationInventors: Hisashi Minemoto, Yasuo Kitaoka, Isao Kidoguchi, Yusuke Mori, Fumio Kawamura, Takatomo Sasaki, Yasuhito Takahashi
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Patent number: 7754012Abstract: A method for manufacturing Group III nitride crystals with high quality is provided. By the method, a crystal raw material solution and gas containing nitrogen are introduced into a reactor vessel, which is heated, and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device to the reactor vessel through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel, impurities attached to the pressure-resistant vessel and the like into the crystal growing site can be prevented. Further, the gas flows through the reactor vessel, to suppress aggregation of an evaporating alkali metal, etc., at the gas inlet and reduce flow of the metal vapor into the gas supplying device.Type: GrantFiled: April 14, 2008Date of Patent: July 13, 2010Assignees: Panasonic CorporationInventors: Hisashi Minemoto, Yasuo Kitaoka, Isao Kidoguchi, Yusuke Mori, Fumio Kawamura, Takatomo Sasaki, Hidekazu Umeda, Yasuhito Takahashi
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Patent number: 7557294Abstract: A solar cell is configured to include: a substrate (21); a conductive film (22) formed on the substrate (21); a compound semiconductor layer (23) formed on the conductive film (22), including a p-type semiconductor crystal containing an element of Group Ib, an element of Group IIIb, and an element of Group VIb; a n-type window layer (24) formed on the compound semiconductor layer (23), having apertures (29); and a n-type transparent conductive film formed on the n-type window layer (24) and on portions of the compound semiconductor layer (23) at the apertures of the n-type window layer (24). The compound semiconductor layer (23) includes high-resistance parts (23B), in portions of the compound semiconductor layer (23) in the vicinity of a surface thereof on a side opposite to the conductive film (22), and the high-resistance parts (23B) contain a n-type impurity doped in the p-type semiconductor crystal.Type: GrantFiled: January 12, 2005Date of Patent: July 7, 2009Assignee: Panasonic CorporationInventors: Yasuhito Takahashi, Yukiyoshi Ono
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Patent number: 7513037Abstract: A method for producing a circuit board having an integrated electronic component comprising providing a circuit board substrate having a first substrate surface and a second substrate surface, securing an integrated electronic component to the first substrate surface, and disposing a first dielectric layer on the first substrate surface and over the first integrated electronic component. The method additionally includes disposing a metallic layer on the first dielectric layer to produce an integrated electronic component assembly, producing in the integrated electronic component assembly at least one via having a metal lining in contact with the metallic layer, and disposing a second dielectric layer over the via and over the metallic layer.Type: GrantFiled: February 17, 2005Date of Patent: April 7, 2009Assignee: Fujitsu LimitedInventors: Mark Thomas McCormack, Hunt Hang Jiang, Michael G. Peters, Yasuhito Takahashi
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Patent number: 7435295Abstract: The present invention provides a method for producing a compound single crystal that can improve a growth rate and grow a large single crystal with high crystal uniformity in a short time, and a production apparatus used for the method. The compound single crystal is grown while stirring a material solution to create a flow from a gas-liquid interface in contact with a source gas toward the inside of the material solution. With this stirring, the source gas can be dissolved easily in the material solution, and supersaturation can be achieved in a short time, thus improving the growth rate of the compound single crystal. Moreover, the flow formed by the stirring goes from the gas-liquid interface where a source gas concentration is high to the inside of the material solution where the source gas concentration is low, so that dissolution of the source gas becomes uniform.Type: GrantFiled: February 18, 2005Date of Patent: October 14, 2008Assignees: Matsushita Electric Industrial Co., Ltd.Inventors: Yasuo Kitaoka, Hisashi Minemoto, Isao Kidoguchi, Yasuhito Takahashi, Takatomo Sasaki, Yusuke Mori, Fumio Kawamura
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Publication number: 20080213158Abstract: A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented.Type: ApplicationFiled: April 14, 2008Publication date: September 4, 2008Applicants: Matsushita Electric Industrial Co., Ltd.Inventors: Hisashi Minemoto, Yasuo Kitaoka, Isao Kidoguchi, Yusuke Mori, Fumio Kawamura, Takatomo Sasaki, Hidekazu Umeda, Yasuhito Takahashi
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Patent number: 7381268Abstract: A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented.Type: GrantFiled: April 27, 2005Date of Patent: June 3, 2008Assignees: Matsushita Electric Industrial Co., Ltd.Inventors: Hisashi Minemoto, Yasuo Kitaoka, Isao Kidoguchi, Yusuke Mori, Fumio Kawamura, Takatomo Sasaki, Hidekazu Umeda, Yasuhito Takahashi
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Publication number: 20080037100Abstract: The present invention provides an acoustooptic device usable even with light in the ultraviolet region, free from laser damage and optical damage, and excellent in acoustooptic performance and an optical imaging apparatus using the same. The acoustooptic device according to the present invention includes a high-frequency signal input part (65), a transducer part (64), and an acoustooptic medium (6). A high-frequency signal input from the high-frequency signal input part (65) is converted into a mechanical vibration by the transducer part (64), and an optical characteristic of the acoustooptic medium (6) varies depending on the mechanical vibration. The acoustooptic medium is formed of a Group III nitride crystal. The optical imaging apparatus according to the present invention includes a light source, an acoustooptic device, a driving circuit, and an image plane.Type: ApplicationFiled: June 29, 2005Publication date: February 14, 2008Applicant: Matsushita Electric Industrial Co., LTD.Inventors: Hisashi Minemoto, Yasuo Kitaoka, Isao Kidoguchi, Takayuki Negami, Yasuhito Takahashi, Toshimi Nishiyama, Kimihiko Shibuya
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Publication number: 20070295396Abstract: A solar cell is configured to include: a substrate (21); a conductive film (22) formed on the substrate (21); a compound semiconductor layer (23) formed on the conductive film (22), including a p-type semiconductor crystal containing an element of Group Ib, an element of Group IIIb, and an element of Group VIb; a n-type window layer (24) formed on the compound semiconductor layer (23), having apertures (29); and a n-type transparent conductive film formed on the n-type window layer (24) and on portions of the compound semiconductor layer (23) at the apertures of the n-type window layer (24). The compound semiconductor layer (23) includes high-resistance parts (23B), in portions of the compound semiconductor layer (23) in the vicinity of a surface thereof on a side opposite to the conductive film (22), and the high-resistance parts (23B) contain a n-type impurity doped in the p-type semiconductor crystal.Type: ApplicationFiled: January 12, 2005Publication date: December 27, 2007Applicant: Matsushita Electric Industrial Co., Ltd.,Inventors: Yasuhito Takahashi, Yukiyoshi Ono
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Publication number: 20070272941Abstract: A method for producing Group-III-element nitride crystals by which an improved growth rate is obtained and large high-quality crystals can be grown in a short time, a producing apparatus used therein, and a semiconductor element obtained using the method and the apparatus are provided. The method is a method for producing Group-III-element nitride crystals that includes a crystal growth process of subjecting a material solution containing a Group III element, nitrogen, and at least one of alkali metal and alkaline-earth metal to pressurizing and heating under an atmosphere of a nitrogen-containing gas so that the nitrogen and the Group III element in the material solution react with each other to grow crystals.Type: ApplicationFiled: March 31, 2005Publication date: November 29, 2007Applicants: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Hisashi Minemoto, Yasuo Kitaoka, Isao Kidoguchi, Yusuke Mori, Fumio Kawamura, Takatomo Sasaki, Yasuhito Takahashi
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Publication number: 20070215035Abstract: The present invention provides a method for producing a compound single crystal that can improve a growth rate and grow a large single crystal with high crystal uniformity in a short time, and a production apparatus used for the method. The compound single crystal is grown while stirring a material solution to create a flow from a gas-liquid interface in contact with a source gas toward the inside of the material solution. With this stirring, the source gas can be dissolved easily in the material solution, and supersaturation can be achieved in a short time, thus improving the growth rate of the compound single crystal. Moreover, the flow formed by the stirring goes from the gas-liquid interface where a source gas concentration is high to the inside of the material solution where the source gas concentration is low, so that dissolution of the source gas becomes uniform.Type: ApplicationFiled: February 18, 2005Publication date: September 20, 2007Applicants: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Yasuo Kitaoka, Hisashi Minemoto, Isao Kidoguchi, Yasuhito Takahashi, Takatomo Sasaki, Yusuke Mori, Fumio Kwamura
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Publication number: 20070157876Abstract: A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented.Type: ApplicationFiled: April 27, 2005Publication date: July 12, 2007Applicants: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Hisashi Minemoto, Yasuo Kitaoka, Isao Kidoguchi, Yusuke Mori, Fumio Kawamura, Takatomo Sasaki, Hidekazu Umeda, Yasuhito Takahashi
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Patent number: 7002080Abstract: A multilayer wiring board is composed of a core portion, a first wiring portion and a second wiring portion. The core portion includes a core insulating layer containing a carbon fiber material. The first wiring portion is bonded to the core portion and has a laminated structure including at least a first insulating layer and a first wiring pattern, the first insulating layer containing glass cloth. The second wiring portion is bonded to the first wiring portion and has a laminated structure including at least a second insulating layer and a second wiring pattern. The core portion, the first wiring portion and the second wiring portion are arranged in a stack.Type: GrantFiled: July 30, 2003Date of Patent: February 21, 2006Assignee: Fujitsu LimitedInventors: Motoaki Tani, Nobuyuki Hayashi, Tomoyuki Abe, Yasuhito Takahashi, Takashi Shuto
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Patent number: 6935124Abstract: A clear ice making apparatus includes: a freezing space; a tray placed in the freezing space and having a lower temperature at a bottom part thereof than at an upper part thereof; and a water supply unit of supplying water to the tray from the top thereof, in which ice is made at an ice making rate of 5 ?m/s or lower, a part of a liquid-phase section of water in the tray which part is in contact with atmosphere is frozen to complete the ice making, the liquid-phase section of water is not entirely supercooled before the ice making is completed, and the concentration of air in the liquid-phase section of water in the tray is equal to or lower than an excessive concentration of air.Type: GrantFiled: May 29, 2003Date of Patent: August 30, 2005Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yasuhito Takahashi, Katutosi Tusima, Takumi Kida, Yuko Ishii, Hiroshi Tatsui, Kazuyuki Hamada