Abstract: The present invention relates to a process for fabrication of a nitride semiconductor light emitting device comprising a substrate, a nitride semiconductor layer on the substrate and electrodes on the nitride semiconductor, the process for fabrication of a nitride semiconductor light emitting device being characterized by device working by laser, followed by etching treatment and then electrode formation.

Abstract: An object of the present invention is to provide a Group III nitride semiconductor multilayer structure having a smooth surface and exhibiting excellent crystallinity, which multilayer structure employs a low-cost substrate that can be easily processed. Another object is to provide a Group III nitride semiconductor light-emitting device comprising the multilayer structure. The inventive Group III nitride semiconductor multilayer structure comprises a substrate; an AlxGa1-xN (0?x?1) buffer layer which is provided on the substrate and has a columnar or island-like crystal structure; and an AlxInyGa1-x-yN (0?x?1, 0?y?1, 0?x+y?1) single-crystal layer provided on the buffer layer, wherein the substrate has, on its surface, non-periodically distributed grooves having an average depth of 0.01 to 5 ?m.

Abstract: A nitride semiconductor light-emitting device includes a substrate, a nitride semiconductor layer incorporating therein a first electroconductive semiconductor layer, a light-emitting layer and a second electroconductive semiconductor layer, a transparent electrode contiguous to at least part of a first surface of the second electroconductive semiconductor layer, and a second electrode contiguous to the first electroconductive semiconductor layer; wherein the substrate has a first surface thereof provided with a first region exposed by removal of a first part of the nitride semiconductor layer in a peripheral part of the device and a second region exposed by removal of at least a second part of the nitride semiconductor layer contiguous to the transparent electrode except the peripheral part of the device till the substrate.

Abstract: A nitride semiconductor light-emitting device includes a substrate and a nitride semiconductor layer including a light-emitting layer stacked on the substrate, wherein a normal line relative to a lateral face of the nitride semiconductor layer is not perpendicular to a normal line relative to a principal plane of the substrate. A method for the production of a nitride semiconductor light-emitting device that includes a substrate and a nitride semiconductor layer including a light-emitting layer stacked on the substrate includes the steps of covering a first surface of the nitride semiconductor layer with a mask provided with a prescribed pattern, removing the nitride semiconductor layer in regions to be divided into component devices till the substrate, subjecting the nitride semiconductor layer to wet-etching treatment and dividing the nitride semiconductor layer into the component devices.

Abstract: The present invention relates to a process for fabrication of a nitride semiconductor light emitting device comprising a substrate, a nitride semiconductor layer on the substrate and electrodes on the nitride semiconductor, the process for fabrication of a nitride semiconductor light emitting device being characterized by device working by laser, followed by etching treatment and then electrode formation.

Abstract: It is an object of the present invention to inhibit exposure of Ag in Ag-employing reflective electrodes caused by microdefects generated during the manufacturing process, and to prevent reduction in light emission output and deterioration in current-voltage characteristics resulting from shorting of the light emitting device. The semiconductor light emitting device comprises an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer in that order on a substrate, with a negative electrode and positive electrode each formed in contact with the n-type semiconductor layer and p-type semiconductor layer, respectively.

Abstract: An object of the present invention is to provide a Group III nitride semiconductor multilayer structure having a smooth surface and exhibiting excellent crystallinity, which multilayer structure employs a low-cost substrate that can be easily processed. Another object is to provide a Group III nitride semiconductor light-emitting device comprising the multilayer structure. The inventive Group III nitride semiconductor multilayer structure comprises a substrate; an AlxGa1-xN (0?x?1) buffer layer which is provided on the substrate and has a columnar or island-like crystal structure; and an AlxInyGa1-x-yN (0?x?1, 0?y?1, 0?x+y?1) single-crystal layer provided on the buffer layer, wherein the substrate has, on its surface, non-periodically distributed grooves having an average depth of 0.01 to 5 ?m.

Abstract: A nitride semiconductor light-emitting device includes a substrate, a nitride semiconductor layer incorporating therein a first electroconductive semiconductor layer, a light-emitting layer and a second electroconductive semiconductor layer, a transparent electrode contiguous to at least part of a first surface of the second electroconductive semiconductor layer, and a second electrode contiguous to the first electroconductive semiconductor layer; wherein the substrate has a first surface thereof provided with a first region exposed by removal of a first part of the nitride semiconductor layer in a peripheral part of the device and a second region exposed by removal of at least a second part of the nitride semiconductor layer contiguous to the transparent electrode except the peripheral part of the device till the substrate.

Abstract: It is an object of the present invention to inhibit exposure of Ag in Ag-employing reflective electrodes caused by microdefects generated during the manufacturing process, and to prevent reduction in light emission output and deterioration in current-voltage characteristics resulting from shorting of the light emitting device. The semiconductor light emitting device comprises an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer in that order on a substrate, with a negative electrode and positive electrode each formed in contact with the n-type semiconductor layer and p-type semiconductor layer, respectively.

Abstract: A nitride semiconductor light-emitting device includes a substrate and a nitride semiconductor layer including a light-emitting layer stacked on the substrate, wherein a normal line relative to a lateral face of the nitride semiconductor layer is not perpendicular to a normal line relative to a principal plane of the substrate. A method for the production of a nitride semiconductor light-emitting device that includes a substrate and a nitride semiconductor layer including a light-emitting layer stacked on the substrate includes the steps of covering a first surface of the nitride semiconductor layer with a mask provided with a prescribed pattern, removing the nitride semiconductor layer in regions to be divided into component devices till the substrate, subjecting the nitride semiconductor layer to wet-etching treatment and dividing the nitride semiconductor layer into the component devices.

Abstract: A method of fabricating a film of group-III nitride semiconductor crystal includes a step of using metal material to deposit particles of a group III metal on a substrate surface in an atmosphere containing no nitrogen source, a step of nitriding the particles in an atmosphere containing a nitrogen source and no metal material, and a step of growing group-III nitride semiconductor crystal on the substrate surface on which the particles have been deposited.

Abstract: A method of fabricating a film of group-III nitride semiconductor crystal includes a step of using metal material to deposit particles of a group III metal on a substrate surface in an atmosphere containing no nitrogen source, a step of nitriding the particles in an atmosphere containing a nitrogen source and no metal material, and a step of growing group-III nitride semiconductor crystal on the substrate surface on which the particles have been deposited.