Abstract: A method of manufacturing a semiconductor device having the steps of: preparing a semiconductor device structure having an interconnection structure including a pair of electrically separated interconnections disposed near each other in one layer and a conductive pattern disposed near the pair of interconnections in the same layer; and applying light having a high intensity sufficient for melting and scattering conductive material of the conductive pattern to the conductive pattern and shorting the pair of interconnections with material formed by melting, scattering, and depositing the conductive material. This method provides a semiconductor device capable of easily connecting separated interconnections formed in the same layer.

Abstract: An evaluation method for a test semiconductor device having at least two wiring patterns disposed in parallel, wherein: at least one wiring pattern is grounded; a pulse voltage is applied between the grounded wiring pattern and an adjacent wiring pattern; a time required for the pulse to reciprocate along the wiring patterns and a value of a voltage including a reflected voltage between the wiring patterns are measured to judge a presence/absence of a wiring breakage or a wiring short circuit and to locate a wiring breakage point or a wiring short circuit point.