Abstract: An electro-optical device includes: a substrate; data lines and scanning lines extending to cross each other on the substrate; thin film transistors disposed below the data lines on the substrate; storage capacitors each of which is disposed in a region including a region facing a channel region of each of the thin film transistors in plan view above the substrate and is disposed above each of the data lines, each of the storage capacitors being formed by stacking a fixed-potential-side electrode, a dielectric film, and a pixel-potential-side electrode in this order from below; and pixel electrodes that are disposed for respective pixels defined in correspondence with the data lines and the scanning lines in plan view above the substrate and are disposed above the storage capacitors, each of the pixel electrodes being electrically connected to the pixel-potential-side electrode and each of the thin film transistors.

Abstract: An electro-optical device including a substrate, data lines and scanning lines, thin film transistors being disposed below the data lines and above the substrate. Storage capacitors are disposed over the data lines in a region opposite to the channel region of the thin film transistors in plan view. Each storage capacitor has a pixel-potential-side electrode, a dielectric film, and a fixed-potential-side electrode that have been formed sequentially. The pixel electrodes are disposed over the storage capacitors so as to correspond to the data lines and the scanning lines on the substrate in plan view, and the pixel electrodes are electrically connected to the pixel-potential-side electrodes and the thin film transistors. This abstract is intended only to aid those searching patents, and is not intended to be used to interpret or limit the scope or meaning of the claims in any manner.

Abstract: An electro-optical device includes: a substrate; data lines and scanning lines extending to cross each other on the substrate; thin film transistors that are disposed to correspond to intersections of the data lines and the scanning lines in plan view above the substrate and are disposed below the data lines; storage capacitors that are disposed above the data lines, each of the storage capacitors being formed by stacking a pixel-potential-side electrode, a dielectric film, and a fixed-potential-side electrode in this order from below; pixel electrodes that are disposed for respective pixels defined in correspondence with the data lines and the scanning lines in plan view above the substrate, each of the pixel electrodes being electrically connected to the pixel-potential-side electrode and each of the thin film transistors; and an interlayer insulating film stacked above the dielectric film.

Abstract: Aspects of the invention can provide an electro-optical device having n image signal lines to which n serial to parallel converted image signals are supplied. A driving circuit has a sampling circuit that can include a plurality of thin film transistors. Each of the thin film transistors can have (i) a drain connected to a drain wiring line arranged from a data line in a direction in which the data line extends, (ii) a source connected to a source wiring line arranged from the image signal line in a direction in which the data line extends, and (iii) a gate arranged to be sandwiched between the drain wiring line and the source wiring line in a direction in which the data line extends, and the plurality of thin film transistors can be arranged to correspond to the plurality of data lines.

Abstract: The disclosure is directed to an electro-optical device and manufacturing method. In one example, a storage capacitor is disposed above a data line. The storage capacitor has a stacked structure of a fixed-potential electrode, a dielectric layer, and a pixel-potential electrode. The storage capacitor is disposed in an area including a region opposed to a channel region of a pixel-switching thin film transistor. A peripheral circuit is disposed in a peripheral area located around a pixel array area. The peripheral circuit includes a peripheral-circuit thin film transistor. The dielectric layer includes a peripheral dielectric layer area having a region opposed to the channel region of the peripheral-circuit thin film transistor.

Abstract: An electro-optical device includes, above a substrate: data lines extending in a first direction; scanning lines extending in a second direction and intersecting the data lines; pixel electrodes and thin film transistors disposed so as to correspond to intersection regions of the data lines and the scanning lines; storage capacitors electrically connected to the thin film transistors and the pixel electrodes; and shielding layers disposed between the data lines and the pixel electrodes. Further, nitride films are included in the shielding layers and are formed along the data lines and are wider than the data lines.

Abstract: An electro-optical device includes, above a substrate: a data line extending in a first direction; a scanning line extending in a second direction and intersecting the data line; pixel electrode and thin film transistor disposed so as to correspond to intersection regions of the data line and the scanning line; a storage capacitor electrically connected to the thin film transistor and the pixel electrode; a shielding layer disposed between the data line and the pixel electrode; an interlayer insulating film disposed as the base of the pixel electrode; and a contact hole formed in the interlayer insulating film, to electrically connect the thin film transistor to the pixel electrode. Further, the entire region inside the contact hole is filled with a filler.

Abstract: An electro-optical device includes, above a substrate: data lines extending in a first direction; scanning lines extending in a second direction and intersecting the data lines; pixel electrodes and thin film transistors disposed so as to correspond to intersection regions of the data lines and the scanning lines; storage capacitors electrically connected to the thin film transistors and the pixel electrodes; and shielding layers disposed between the data lines and the pixel electrodes. Further, nitride films are included in the shielding layers and are formed along the data lines and are wider than the data lines.

Abstract: An electro-optical device includes, above a substrate: data lines extending in a first direction; scanning lines extending in a second direction and intersecting the data lines; pixel electrodes and thin film transistors disposed so as to correspond to intersection regions of the data lines and the scanning lines; storage capacitors electrically connected to the thin film transistors and the pixel electrodes; and shielding layers disposed between the data lines and the pixel electrodes. Further, nitride films are included in the shielding layers and are formed along the data lines and are wider than the data lines.

Abstract: An electro-optical device comprising thin film transistors disposed closer to a substrate than data lines and a first interlayer insulating film that is laminated on the thin film transistors and is subjected to a planarizing process. Storage capacitors are disposed further from the substrate than the data lines, and each storage capacitor includes a fixed potential side electrode, a dielectric film, and a pixel potential side electrode. Pixel electrodes are disposed further from the substrate than the storage capacitors and are electrically connected to the pixel potential side electrode and the thin film transistor. Each of the data lines comprises a conductive light shielding film which is formed so as to at least partially cover the channel region of each of the thin film transistors in plan view.

Abstract: An electro-optical device includes: data lines extending in a first direction on a substrate; scanning lines extending in a second direction and intersecting with the data lines; pixel electrodes and thin film transistors disposed corresponding to intersections of the data lines and the scanning lines; storage capacitors electrically connected to the thin film transistors and the pixel electrodes; and a shielding layer disposed between the data lines and the pixel electrodes. One of a pair of electrodes forming the storage capacitor is formed of a multi-layered film containing a low resistance film.

Abstract: An electro-optical device including a substrate, data lines and scanning lines, thin film transistors being disposed below the data lines and above the substrate. Storage capacitors are disposed over the data lines in a region opposite to the channel region of the thin film transistors in plan view. Each storage capacitor has a pixel-potential-side electrode, a dielectric film, and a fixed-potential-side electrode that have been formed sequentially. The pixel electrodes are disposed over the storage capacitors so as to correspond to the data lines and the scanning lines on the substrate in plan view, and the pixel electrodes are electrically connected to the pixel-potential-side electrodes and the thin film transistors. This abstract is intended only to aid those searching patents, and is not intended to be used to interpret or limit the scope or meaning of the claims in any manner.

Abstract: An electro-optical device having a pixel-switching thin film transistor disposed below the data lines on a substrate and a storage capacitor with a stacked structure of a high-potential electrode, a dielectric layer, and pixel-potential electrode that is disposed in an area including a region opposed to a channel region of the pixel-switching thin film transistor and disposed above the data lines. A pixel electrode is disposed above the storage capacitor for each pixel and a peripheral circuit is disposed in a peripheral area located around a pixel array area in which the pixels are arranged. The dielectric layer includes a non-opened area located between opened areas of the pixels. A peripheral dielectric layer area includes a region opposed to a channel region of a peripheral-circuit thin film transistor which is disposed below the storage capacitor and constitutes the peripheral circuit.

Abstract: An electro-optical device includes: a substrate; data lines and scanning lines extending to cross each other on the substrate; thin film transistors disposed below the data lines on the substrate; storage capacitors each of which is disposed in a region including a region facing a channel region of each of the thin film transistors in plan view above the substrate and is disposed above each of the data lines, each of the storage capacitors being formed by stacking a fixed-potential-side electrode, a dielectric film, and a pixel-potential-side electrode in this order from below; and pixel electrodes that are disposed for respective pixels defined in correspondence with the data lines and the scanning lines in plan view above the substrate and are disposed above the storage capacitors, each of the pixel electrodes being electrically connected to the pixel-potential-side electrode and each of the thin film transistors.

Abstract: An electro-optical device includes: a substrate; data lines and scanning lines extending to cross each other on the substrate; thin film transistors that are disposed to correspond to intersections of the data lines and the scanning lines in plan view above the substrate and are disposed below the data lines; storage capacitors that are disposed above the data lines, each of the storage capacitors being formed by stacking a pixel-potential-side electrode, a dielectric film, and a fixed-potential-side electrode in this order from below; pixel electrodes that are disposed for respective pixels defined in correspondence with the data lines and the scanning lines in plan view above the substrate, each of the pixel electrodes being electrically connected to the pixel-potential-side electrode and each of the thin film transistors; and an interlayer insulating film stacked above the dielectric film.

Abstract: The present invention provides an electro-optic device that displays high-quality images without irregular display along data lines arising from variations in the potential of pixel electrodes by energization to the data lines in an electro-optic device. The electro-optic device can have a multilayer structure including a substrate, TFTs, scanning lines, storage capacitance, data lines, and pixel electrodes, each of which is arranged on the substrate in this order. In this electro-optic device, a third interlayer insulator positioned between the data lines and the pixel electrodes has a relative dielectric constant lower than that of a dielectric film constituting the storage capacitance. The third interlayer insulator preferably has a relative dielectric constant lower than those of first and second interlayer insulators.

Abstract: A driving circuit of an electro-optical device having a plurality of scanning lines, a plurality of data lines, and a plurality of pixel electrodes electrically connected to the scanning lines and the data lines, respectively, in an image display region on a substrate, the driving circuit includes a shift register circuit which sequentially outputs transfer signals from respective stages, a first arithmetic logic circuit which outputs the sequentially output transfer signals and selection signals for precharge input from a first input terminal to a first path by a logical operation, a second arithmetic logic circuit which generates sampling signals by a logical operation between the transfer signals input from the first path and enable signals input from a second input terminal, and which outputs the generated sampling signals and the selection signals for precharge input from the first path to a second path, and a sampling circuit including a plurality of sampling switches which sample precharge signals, whi

Abstract: An electro-optical device includes, above a substrate: data lines extending in a first direction; scanning lines extending in a second direction and intersecting the data lines; pixel electrodes and thin film transistors disposed so as to correspond to intersection regions of the data lines and the scanning lines; storage capacitors electrically connected to the thin film transistors and the pixel electrodes; and shielding layers disposed between the data lines and the pixel electrodes. Further, nitride films are included in the shielding layers and are formed along the data lines and are wider than the data lines.

Abstract: Aspects of the invention can provide an electro-optical device having n image signal lines to which n serial to parallel converted image signals are supplied. A driving circuit has a sampling circuit that can include a plurality of thin film transistors. Each of the thin film transistors can have (i) a drain connected to a drain wiring line arranged from a data line in a direction in which the data line extends, (ii) a source connected to a source wiring line arranged from the image signal line in a direction in which the data line extends, and (iii) a gate arranged to be sandwiched between the drain wiring line and the source wiring line in a direction in which the data line extends, and the plurality of thin film transistors can be arranged to correspond to the plurality of data lines.

Abstract: The invention provides an electro-optical device that can include a pixel electrode, a thin-film transistor (TFT) including a semiconductor layer connected to the pixel electrode, and a data line and scanning line connected to the TFT. The scanning line can include a narrow part as a gate electrode facing a channel region in the semiconductor layer, and a wide part not facing the channel region. Such construction permits the electro-optical device to display high quality images by preventing light from impinging the TFT.