Abstract: It is an object of the present invention to provide an ultrapure water producing apparatus with reduced problems resulting from impurities generated after replacement of unit apparatuses. A TOC-UV (1), a CP (2) and a UF film (3) are provided in this order from the upstream side of a pure water supply route. Ultrapure water flowing through the UF film (3) is supplied to a use point. A branch route branched from the pure water supply route is provided downstream of the UF film (3). A dissolved oxygen concentration meter (M1) is interposed in the branch route for measuring dissolved oxygen concentration in ultrapure water passed through the UF film (3). The branch route is connected to an oxidant decomposition unit (11). Oxidants included in ultrapure water flowing through the branch route are all converted into DO at the oxidant decomposition unit (11).

Abstract: It is an object of the present invention to provide an ultrapure water producing apparatus with reduced problems resulting from impurities generated after replacement of unit apparatuses.

Abstract: Data containing defect position coordinates obtained based on the result of physical inspection of foreign material, a defect or the like at the surface of a semiconductor wafer by a defect inspecting apparatus is stored. Also stored is data of physical coordinates obtained based on fail bit data from a tester. Data indicating an additional failure region is produced by an additional failure region estimating apparatus based on the fail bit data, and is stored. Collation produces data of corrected physical position coordinates by adding the stored data of limitation by failure mode to the stored data of physical position coordinates, and collates the data of corrected physical position coordinates with stored data of defect position coordinates. Accordingly, accuracy in collation is improved, and failure can be analyzed even if caused not by a defect located at an address of the failure obtained by the fail bit data but by a defect relating to the defect located at the address of a failure.

Abstract: A wafer (1) on which an oxide film (3) is formed is disposed on a wafer stage (2), and the surface of the oxide film (3) is irradiated with a laser beam by a laser-beam irradiation unit (4). Then, the laser beam applied to a region having a concave portion (13) is scattered in the surface of the oxide film (3) due to the level difference of the concave portion (13). Accordingly, through a scanning with the laser beam, the scattered light due to the concave portion (13) is received by a scattered-light receptor (5). Subsequently, information on distribution of the scattered light received by the scattered-light receptor (5) is converted into a potential and an OCR process is performed on the potential distribution by an OCR process unit (6), to read the configuration of the concave portion (13) formed in the surface of the oxide film (3) as character information.

Abstract: A monocrystalline silicon wafer is improved so as not to cause enhanced oxidation at the time of forming a gate oxide film. The monocrystalline silicon wafer includes a monocrystalline silicon substrate. The monocrystalline silicon substrate has potassium concentration of at most 2.times.10.sup.11 atoms/cm.sup.2 at an outer surface thereof.

Abstract: A semiconductor substrate with no reduction in the effective usage area and mechanical strength, and non-uniformity of the resist film thickness, and method of manufacturing and using the same are obtained. A detection mark for detecting the crystal orientation of a silicon wafer having an outer perimeter entirely of a circular contour is formed at a predetermined region of the silicon wafer. The crystal orientation of the semiconductor wafer can easily be detected with the outer perimeter still taking a circular contour. Therefore, various problems encountered in a conventional semiconductor substrate having an orientation flat or notch such as reduction in mechanical strength and effective usage area, and non-uniformity of the resist film can be circumvented.

Abstract: Data containing defect position coordinates obtained based on the result of physical inspection of a foreign material, a defect and the like at a surface of a semiconductor wafer by a defect inspecting apparatus is stored in storage means. Data of physical position coordinates obtained based on fail bit data from a tester is stored in storage means. Data indicating an additional failure region is produced by additional failure region estimating means based on the fail bit data, and is stored in storage means. Collating means produces data of corrected physical position coordinates by adding the data of limitation by failure mode stored in storage means to the data of physical position coordinates stored in storage means, and collates the data of corrected physical position coordinates with data of defect position coordinates stored in storage means.

Abstract: An improved cleaning apparatus preventing new cleaning chemicals form contamination at the time of exchanging used cleaning chemicals with the new chemicals is provided. The apparatus includes a cleaning chemicals tank storing new chemicals and a cleaning vessel. A first cleaning chemicals supply conduit supplying new chemicals from tank into vessel is coupled to cleaning chemicals tank. A waste fluid conduit externally discharging used cleaning chemicals is provided at the bottom of vessel. Vessel is provided with wetting agent supply means supplying a wetting agent to wet the inner wall surface 8a of vessel.

Abstract: A semiconductor substrate allowing prevention of the breakdown voltage degradation of a gate oxide film and having a prescribed mechanical strength in order to cope with increase in the diameters of wafers corresponding to reduction in the dimensions of semiconductor devices and improvement in productivity, and a Bi-CMOS semiconductor device allowing electrical characteristics to be maintained in any of a bipolar transistor and a field effect transistor are provided. An epitaxial layer is formed on a silicon wafer formed by means of CZ method. A silicon wafer formed by means of FZ method is joined onto the epitaxial layer. An npn bipolar transistor is formed in the epitaxial layer. An n channel MOS transistor and a p channel MOS transistor are formed in the silicon wafer.

Abstract: An apparatus for measuring the concentration of solids in a flow of water is described. Water in a sampling pipe 2 is divided into two paths by a branch pipe. Water flowing through respective paths then passes through respective filters having different pore sizes. Then, the flow rates of the water passing through each of the filters 9a and 9b is measured by flow meters. An operation circuit successively calculates the relative ratio of the time dependent change of the output from each of the flow meters based on the outputs from each of the flow meters 10a and 10b. The successive ratios are indirectly related to the concentration of solids in the stream large enough to be captured by the smallest pore size filter.

Abstract: A sampled flow of water is extracted from a water conduit 1 carrying impure water by a sampling tube 2, the pressure at a point in the sampling tube is kept constant by a constant pressure maintaining valve 4, and the sampled water passed through a filter 7. The flow rate of sampled water passing through the filter 7 is measured by a flow meter 8. A value corresponding to the total amount or level of impurity in the sampled water is evaluated by an operation circuit 9 at a prescribed time interval, based on the time-dependent change in the result of measurement of the flow meter 8 and the total amount or level of impurities in pure water is thus measured indirectly.

Abstract: A device for measuring the absolute value of the density of salts in atmosphere, which comprises: an airtight water tank containing super pure water of a predetermined quantity; a means for bubbling a predetermined quantity of air in atmosphere for a predetermined time into the super pure water to make the salts in the air dissolve in the water; a means for exhausting the super pure water after the bubbling; and a sodium ion analyzer for measuring the density of sodium ions in the exhausted super pure water of a predetermined quantity.