Patents by Inventor Yasukazu Shiina

Yasukazu Shiina has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SURFACE EMITTING LASER, AND TRANSCEIVER, OPTICAL TRANSCEIVER, AND OPTICAL COMMUNICATION SYSTEM EMPLOYING THE SURFACE EMITTING LASER
    Publication number: 20100086311
    Abstract: A surface emitting laser includes a lower semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area; an active layer vertically sandwiched by cladding layers; a current confinement layer of AlzGa1-zAs having an oxide area in a peripheral portion of the current confinement layer, where 0.95?z?1; and an upper semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area. The low-refractive-index area of at least one of the lower semiconductor multilayer mirror and the upper semiconductor multilayer mirror includes an Alz1Ga1-z1As layer with a thickness thinner than that of the current confinement layer, where z?z1.
    Type: Application
    Filed: December 10, 2009
    Publication date: April 8, 2010
    Applicant: The FURUKAWA ELECTRIC CO., LTD.
    Inventors: Hitoshi SHIMIZU, Setiagung Casimirus, Yasukazu Shiina, Takeshi Hama, Norihiro Iwai
  • Surface emitting laser, and transceiver, optical transceiver, and optical communication system employing the surface emitting laser
    Patent number: 7656924
    Abstract: A surface emitting laser includes a lower semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area; an active layer vertically sandwiched by cladding layers; a current confinement layer of AlzGa1-zAs having an oxide area in a peripheral portion of the current confinement layer, where 0.95?z?1; and an upper semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area. The low-refractive-index area of at least one of the lower semiconductor multilayer mirror and the upper semiconductor multilayer mirror includes an Alz1Ga1-z1As layer with a thickness thinner than that of the current confinement layer, where z?z1.
    Type: Grant
    Filed: October 5, 2004
    Date of Patent: February 2, 2010
    Assignee: The Furukawa Electric Co., Ltd.
    Inventors: Hitoshi Shimizu, Setiagung Casimirus, Yasukazu Shiina, Takeshi Hama, Norihiro Iwai
  • Surface emitting laser, and transceiver, optical transceiver, and optical communication system employing the surface emitting laser
    Publication number: 20050123014
    Abstract: A surface emitting laser includes a lower semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area; an active layer vertically sandwiched by cladding layers; a current confinement layer of AlzGa1-zAs having an oxide area in a peripheral portion of the current confinement layer, where 0.95?z?1; and an upper semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area. The low-refractive-index area of at least one of the lower semiconductor multilayer mirror and the upper semiconductor multilayer mirror includes an Alz1Ga1-z1As layer with a thickness thinner than that of the current confinement layer, where z?z1.
    Type: Application
    Filed: October 5, 2004
    Publication date: June 9, 2005
    Applicant: THE FURUKAWA ELECTRONIC CO., LTD.
    Inventors: Hitoshi Shimizu, Setiagung Casimirus, Yasukazu Shiina, Takeshi Hama, Norihiro Iwai
  • Surface emitting semiconductor laser device
    Publication number: 20020167985
    Abstract: A surface emission semiconductor laser device includes a GaAs substrate and a layer structure having a plurality of constituent layers including an active layer, a pair of cladding layers, and a pair of multilayer semiconductor mirrors. One of the multilayer mirrors includes an AlAs layer having an Al-oxidized area forming a current confinement structure. At least one of the constituent layers, such as active layer or one of the multilayer mirrors, has an oxygen density of 1×1018 cm−3 or less. The laser device suppresses reduction of the optical output power with time.
    Type: Application
    Filed: April 17, 2002
    Publication date: November 14, 2002
    Inventors: Tatsuyuki Shinagawa, Noriyuki Yokouchi, Yasukazu Shiina, Akihiko Kasukawa