Abstract: A method for manufacturing a semiconductor device includes: forming a first through hole penetrating from a first surface to a second surface of a semiconductor substrate; forming a second insulating film at the first surface of the semiconductor substrate and a side surface of the first through hole; disposing a resist at a surface of the second insulating film from the first surface of the semiconductor substrate to an end portion of the side surface of the first through hole on a first surface side of the semiconductor substrate; wet-etching the second insulating film by using the resist as a mask; covering the first surface of the semiconductor substrate and the side surface of the first through hole with an organic insulating film; and forming a second conductive film at a surface of the organic insulating film.