Abstract: A plasma processing apparatus for processing a subject placed on a subject stage disposed in a processing chamber in a vacuum vessel, by using plasma formed in said processing chamber, includes: an exhaust space communicating with the processing chamber, extending in a horizontal direction, and exhausting gas in the processing chamber; an exhaust port communicating with the exhaust space, the gas being exhausted via the exhaust port; a pump disposed communicating with the exhaust port and exhausting the gas; and a plate member disposed in the exhaust space between a connection portion to the processing chamber and the exhaust port, extending along a direction connecting the connection portion and the exhaust port, and disposed outside a view angle from an upper surface of the subject stage.

Abstract: The present invention provides a method for stably generating cleaning plasma regardless of a condition of CO-containing plasma. When a magnetic film formed on a wafer 802 to be etched is processed with the CO-containing plasma which is generated by applying a source electric power to a CO-containing gas containing elements of C and O, which has been introduced into a vacuum chamber 801, to convert the CO-containing gas into a plasma state, the method includes: applying predetermined processing to the magnetic film formed on the wafer 802 to be etched by using the CO-containing plasma; then introducing a cleaning gas into the vacuum chamber in a state of applying the source electric power 806 to the antenna; and then stopping the introduction of the CO-containing gas into the vacuum chamber to thereby generate the cleaning plasma with the use of a predetermined cleaning gas.

Abstract: Disclosed is a plasma processing method that excels in mass production consistency as it suppresses the flaking of a reaction product deposited on a portion outside the effective range of a Faraday shield in a vacuum vessel. The plasma processing method, which plasma-processes a sample having a layer made of an etch-resistant material by using a plasma processing apparatus having a discharger and a processor, includes a first step of performing an aging process that is to be performed before etching the sample, a second step of performing etching by plasma-processing the layer that is made of an etch-resistant material and formed on the sample, a third step of stabilizing a film deposited on the inner wall of a chamber forming the processor by performing plasma processing after the second step, and an additional step of repeating the second step and the third step.

Abstract: A plasma processing apparatus for processing a subject placed on a subject stage disposed in a processing chamber in a vacuum vessel, by using plasma formed in said processing chamber, includes: an exhaust space communicating with the processing chamber, extending in a horizontal direction, and exhausting gas in the processing chamber; an exhaust port communicating with the exhaust space, the gas being exhausted via the exhaust port; a pump disposed communicating with the exhaust port and exhausting the gas; and a plate member disposed in the exhaust space between a connection portion to the processing chamber and the exhaust port, extending along a direction connecting the connection portion and the exhaust port, and disposed outside a view angle from an upper surface of the subject stage.